Patents by Inventor Hajime Ugajin
Hajime Ugajin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8968475Abstract: A substrate processing apparatus, which is provided with a processing chamber configured to process a substrate and capable of being depressurized, includes a substrate placing table configured to place a substrate; a baffle plate disposed around the substrate placing table so as to divide an inside of the processing chamber into a processing space and an exhaust space; and an exhaust port configured to exhaust the inside of the processing chamber. A gap is formed between the substrate placing table and the baffle plate and a plurality of communication holes are formed in the baffle plate so that the processing space and the exhaust space communicate with each other.Type: GrantFiled: January 12, 2012Date of Patent: March 3, 2015Assignee: Tokyo Electron LimitedInventors: Masaya Odagiri, Shigeki Tozawa, Hajime Ugajin
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Patent number: 8956546Abstract: A substrate processing method for removing an Si-based film on a surface of a substrate accommodated in a processing chamber includes a first step in which the Si-based film on the surface of the substrate is transformed into a reaction product by a gas containing a halogen element and an alkaline gas in the processing chamber and a second step in which the reaction product is vaporized in the processing chamber which is depressurized to a pressure lower than a pressure during the first step. The first step and the second step are repeated two or more times.Type: GrantFiled: August 2, 2011Date of Patent: February 17, 2015Assignee: Tokyo Electron LimitedInventors: Hajime Ugajin, Shigeki Tozawa
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Publication number: 20130130499Abstract: A substrate processing method for removing an Si-based film on a surface of a substrate accommodated in a processing chamber includes a first step in which the Si-based film on the surface of the substrate is transformed into a reaction product by a gas containing a halogen element and an alkaline gas in the processing chamber and a second step in which the reaction product is vaporized in the processing chamber which is depressurized to a pressure lower than a pressure during the first step. The first step and the second step are repeated two or more times.Type: ApplicationFiled: August 2, 2011Publication date: May 23, 2013Applicant: TOKYO ELECTRON LIMITEDInventors: Hajime Ugajin, Shigeki Tozawa
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Patent number: 8440568Abstract: The etching method includes etching the silicon oxide film by supplying a halogen-containing gas and a basic gas to the substrate so that the silicon oxide film is chemically reacted with the halogen-containing gas and the basic gas to generate a condensation layer; etching silicon by supplying a silicon etching gas, which includes at least one selected from the group consisting of an F2 gas, an XeF2 gas, and a ClF3 gas, to the substrate; and after the etching of the silicon oxide film and the etching of the silicon, heating and removing the condensation layer from the substrate.Type: GrantFiled: March 19, 2010Date of Patent: May 14, 2013Assignee: Tokyo Electron LimitedInventor: Hajime Ugajin
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Publication number: 20120180883Abstract: A substrate processing apparatus, which is provided with a processing chamber configured to process a substrate and capable of being depressurized, includes a substrate placing table configured to place a substrate; a baffle plate disposed around the substrate placing table so as to divide an inside of the processing chamber into a processing space and an exhaust space; and an exhaust port configured to exhaust the inside of the processing chamber. A gap is formed between the substrate placing table and the baffle plate and a plurality of communication holes are formed in the baffle plate so that the processing space and the exhaust space communicate with each other.Type: ApplicationFiled: January 12, 2012Publication date: July 19, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Masaya ODAGIRI, Shigeki TOZAWA, Hajime UGAJIN
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Patent number: 7979942Abstract: A substrate treatment apparatus including a substrate holding mechanism for holding a substrate; a first brush made of an elastically deformable material and having a cleaning surface inclined with respect to a perpendicular direction perpendicular to one surface of the substrate held by the substrate holding mechanism; a first brush moving mechanism for moving the first brush with respect to the substrate held by the substrate holding mechanism; a controller for controlling the first brush moving mechanism so that the cleaning surface is made to contact with a peripheral area on the one surface and a peripheral end face of the substrate held by the substrate holding mechanism; and a first pushing pressure holding mechanism for holding a pushing pressure of the first brush in the perpendicular direction to the peripheral area on the one surface of the substrate at a preset pushing pressure.Type: GrantFiled: March 30, 2007Date of Patent: July 19, 2011Assignees: Dainippon Screen Mfg. Co., Ltd., Sony CorporationInventors: Nobuyasu Hiraoka, Tsuyoshi Okumura, Akiyoshi Nakano, Hajime Ugajin
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Publication number: 20100240218Abstract: The etching method includes etching the silicon oxide film by supplying a halogen-containing gas and a basic gas to the substrate so that the silicon oxide film is chemically reacted with the halogen-containing gas and the basic gas to generate a condensation layer; etching silicon by supplying a silicon etching gas, which includes at least one selected from the group consisting of an F2 gas, an XeF2 gas, and a ClF3 gas, to the substrate; and after the etching of the silicon oxide film and the etching of the silicon, heating and removing the condensation layer from the substrate.Type: ApplicationFiled: March 19, 2010Publication date: September 23, 2010Applicant: TOKYO ELECTRON LIMITEDInventor: Hajime UGAJIN
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Publication number: 20070226926Abstract: A substrate treatment apparatus including a substrate holding mechanism for holding a substrate; a first brush made of an elastically deformable material and having a cleaning surface inclined with respect to a perpendicular direction perpendicular to one surface of the substrate held by the substrate holding mechanism; a first brush moving mechanism for moving the first brush with respect to the substrate held by the substrate holding mechanism; a controller for controlling the first brush moving mechanism so that the cleaning surface is made to contact with a peripheral area on the one surface and a peripheral end face of the substrate held by the substrate holding mechanism; and a first pushing pressure holding mechanism for holding a pushing pressure of the first brush in the perpendicular direction to the peripheral area on the one surface of the substrate at a preset pushing pressure.Type: ApplicationFiled: March 30, 2007Publication date: October 4, 2007Inventors: Nobuyasu Hiraoka, Tsuyoshi Okumura, Akiyoshi Nakano, Hajime Ugajin
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Patent number: 7252778Abstract: An etching method and etching device are provided, enabling uniform rendering of the thickness of a film for processing on a wafer regardless of the film thickness profile thereof, and thereby enabling global planarizing of the wafer surface. In an etching method, the film thickness profile of the film for processing formed on the wafer is ascertained in advance, and wet etching is performed by discharging an etchant liquid L1 at a thick portion of the film for processing; simultaneously with the discharge of the etchant liquid L1, a diluting liquid L2 for the etchant liquid L1 is discharged at a thin portion of the film for processing.Type: GrantFiled: May 5, 2004Date of Patent: August 7, 2007Assignee: Sony CorporationInventors: Hayato Iwamoto, Kei Kinoshita, Hajime Ugajin
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Publication number: 20060244078Abstract: An etching method and etching device are provided, enabling uniform rendering of the thickness of a film for processing on a wafer regardless of the film thickness profile thereof, and thereby enabling global planarizing of the wafer surface. In an etching method, the film thickness profile of the film for processing formed on the wafer is ascertained in advance, and wet etching is performed by discharging an etchant liquid L1 at a thick portion of the film for processing; simultaneously with the discharge of the etchant liquid L1, a diluting liquid L2 for the etchant liquid L1 is discharged at a thin portion of the film for processing.Type: ApplicationFiled: July 13, 2006Publication date: November 2, 2006Inventors: Hayato Iwamoto, Kei Kinoshita, Hajime Ugajin
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Publication number: 20050000940Abstract: An etching method and etching device are provided, enabling uniform rendering of the thickness of a film for processing on a wafer regardless of the film thickness profile thereof, and thereby enabling global planarizing of the wafer surface. In an etching method, the film thickness profile of the film for processing formed on the wafer is ascertained in advance, and wet etching is performed by discharging an etchant liquid L1 at a thick portion of the film for processing; simultaneously with the discharge of the etchant liquid L1, a diluting liquid L2 for the etchant liquid L1 is discharged at a thin portion of the film for processing.Type: ApplicationFiled: May 5, 2004Publication date: January 6, 2005Inventors: Hayato Iwamoto, Kei Kinoshita, Hajime Ugajin