Abstract: A gas diffusion layer-integrated gasket 1 includes a first gasket 12 which is integrally molded to a periphery of a first gas diffusion layer 11 and a second gasket 14 which is integrally molded to a periphery of a second gas diffusion layer 13, and a hinge part 15 which connects the first gasket 12 and second gasket 14 to each other. The first and second gas diffusion layers sandwich a membrane-electrode assembly 2 in which catalytic electrode layers are provided on both surfaces of an electrolytic membrane from both sides, wherein a seal protrusion 12c is formed on a surface which is in tight contact with the membrane-electrode assembly 2.

Abstract: An object is to provide a technology capable of improving a manufacturing yield of semiconductor devices by preventing scattering of irregular-shaped scraps formed at the time of dicing. To achieve the above object, for dicing lines, by which an irregular-shaped outer periphery may possibly be cut off, among a plurality of dicing lines, formation of the dicing lines starts from an outside of a semiconductor wafer, and after the semiconductor wafer is cut off partway, formation of the dicing lines is ended before reaching the irregular-shaped outer periphery formed on a outer periphery of the semiconductor wafer. For other dicing lines, formation of the dicing lines starts from the outside of the semiconductor wafer, and after the semiconductor wafer is cut off, is ended outside the semiconductor wafer.

Abstract: An object is to provide a technology capable of improving a manufacturing yield of semiconductor devices by preventing scattering of irregular-shaped scraps formed at the time of dicing. To achieve the above object, for dicing lines, by which an irregular-shaped outer periphery may possibly be cut off, among a plurality of dicing lines, formation of the dicing lines starts from an outside of a semiconductor wafer, and after the semiconductor wafer is cut off partway, formation of the dicing lines is ended before reaching the irregular-shaped outer periphery formed on a outer periphery of the semiconductor wafer. For other dicing lines, formation of the dicing lines starts from the outside of the semiconductor wafer, and after the semiconductor wafer is cut off, is ended outside the semiconductor wafer.