Patents by Inventor Hak Beom Moon

Hak Beom Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing an instant pulse filter using anodic oxidation and instant pulse filter manufactured by said method
    Patent number: 8129745
    Abstract: The instant pulse filter according to the present invention, which may cause a malfunction or a short life span of a semiconductor device, is made using an aluminum anodic oxidation, comprising—a first step for forming an aluminum thin film layer on an upper side of an insulator substrate; a second step for forming an aluminum oxide thin film layer having a pore by oxidizing the aluminum thin film layer by means of an anodic oxidation; a third step for depositing a metallic material on an upper side of the aluminum thin film layer for filling the pore; a fourth step for forming a nano rod in the interior of the aluminum oxide thin film layer by eliminating the metallic material deposited except in the pore; a fifth step for forming an internal electrode on an upper side of the aluminum oxide thin film layer having the nano rod; a sixth step for forming a protective film layer on an upper side of the same in order to protect the aluminum oxide thin film layer and the internal electrode from the external enviro
    Type: Grant
    Filed: April 3, 2009
    Date of Patent: March 6, 2012
    Assignee: Nextron Corporation
    Inventors: Hak Beom Moon, Jin Hyung Cho, Suc Hyun Bang, Cheol Hwan Kim, Yoon Hyung Jang
  • METHOD OF MANUFACTURING AN INSTANT PULSE FILTER USING ANODIC OXIDATION AND INSTANT PULSE FILTER MANUFACTURED BY SAID METHOD
    Publication number: 20110133854
    Abstract: The instant pulse filter according to the present invention, which may cause a malfunction or a short life span of a semiconductor device, is made using an aluminum anodic oxidation, comprising—a first step for forming an aluminum thin film layer on an upper side of an insulator substrate; a second step for forming an aluminum oxide thin film layer having a pore by oxidizing the aluminum thin film layer by means of an anodic oxidation; a third step for depositing a metallic material on an upper side of the aluminum thin film layer for filling the pore; a fourth step for forming a nano rod in the interior of the aluminum oxide thin film layer by eliminating the metallic material deposited except in the pore; a fifth step for forming an internal electrode on an upper side of the aluminum oxide thin film layer having the nano rod; a sixth step for forming a protective film layer on an upper side of the same in order to protect the aluminum oxide thin film layer and the internal electrode from the external enviro
    Type: Application
    Filed: April 3, 2009
    Publication date: June 9, 2011
    Inventors: Hak Beom Moon, Jin Hyung Cho, Suc Hyun Bang, Cheol Hwan Kim, Yoon Hyung Jang