Patents by Inventor Hak Jun AHN

Hak Jun AHN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical-vapor-deposition silicon carbide bulk having improved etching characteristic
    Patent number: 11859309
    Abstract: In the present invention, a chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic includes silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (methyltrichlorosilane), hydrogen (H2), and nitrogen (N2) gases. The SIC manufactured by the chemical vapor deposition method is ?-SiC (3C-SiC), and 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method. Five peaks having a reference code of 03-065-0360 and a peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a nitrogen concentration value is 4.0×1018 atoms/cm3 or more at a depth of 1,500 nm or more from the surface of the bulk, which is a metastable layer.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: January 2, 2024
    Assignee: DS TECHNO CO., LTD.
    Inventors: Hak Jun Ahn, Young Ju Kim, Youn Woong Jung, Kang Suk Kim, Jun Baek Song, Won Geun Son
  • CHEMICAL-VAPOR-DEPOSITION SILICON CARBIDE BULK HAVING IMPROVED ETCHING CHARACTERISTIC
    Publication number: 20210355603
    Abstract: In the present invention, a chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic includes silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (methyltrichlorosilane), hydrogen (H2), and nitrogen (N2) gases. The SIC manufactured by the chemical vapor deposition method is ?-SiC (3C-SiC), and 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method. Five peaks having a reference code of 03-065-0360 and a peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a nitrogen concentration value is 4.0×1018 atoms/cm3 or more at a depth of 1,500 nm or more from the surface of the bulk, which is a metastable layer.
    Type: Application
    Filed: May 22, 2019
    Publication date: November 18, 2021
    Applicant: DS TECHNO CO., LTD.
    Inventors: Hak Jun AHN, Young Ju KIM, Youn Woong JUNG, Kang Suk KIM, Jun Baek SONG, Won Geun SON