Patents by Inventor Hak Yong Sim

Hak Yong Sim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Standardization of assist pattern inserted into outermost pattern for enhancing depth of focus margin
    Patent number: 8181127
    Abstract: A method for processing optical proximity correction is disclosed which eliminates a need for repeated implementation of experiments and result in a reducing the processing time as compared to trial and error. Furthermore, the method can realize an optimal insertion of the assist pattern by applying different conditions to specific layers. The method includes determining whether or not to insert an assist pattern around an outermost pattern. A shape of the assist pattern inserted around the outermost pattern is determined. The contrast of the outermost pattern is compared against a contrast of a cell array pattern. The contrast of the outermost pattern is repeated compared with the contrast of the cell array pattern under a defocus state.
    Type: Grant
    Filed: December 28, 2009
    Date of Patent: May 15, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventors: Hyoung Soon Yune, Joo Kyoung Song, Hak Yong Sim
  • METHOD FOR PROCESSING OPTICAL PROXIMITY CORRECTION
    Publication number: 20100333046
    Abstract: A method for processing optical proximity correction is disclosed which eliminates a need for repeated implementation of experiments and result in a reducing the processing time as compared to trial and error. Furthermore, the method can realize an optimal insertion of the assist pattern by applying different conditions to specific layers. The method includes determining whether or not to insert an assist pattern around an outermost pattern. A shape of the assist pattern inserted around the outermost pattern is determined. The contrast of the outermost pattern is compared against a contrast of a cell array pattern. The contrast of the outermost pattern is repeated compared with the contrast of the cell array pattern under a defocus state.
    Type: Application
    Filed: December 28, 2009
    Publication date: December 30, 2010
    Applicant: Hynix Semiconductor, Inc.
    Inventors: Hyoung Soon YUNE, Joo Kyoung SONG, Hak Yong SIM