Patents by Inventor Hak-yun Kim

Hak-yun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR PREPARING PIXEL DEFINE LAYER
    Publication number: 20240134272
    Abstract: Provided are a method for preparing a pixel defining layer comprising applying and coating, pre-baking, exposing to light, developing, and post-baking of a photosensitive composition containing a colorant having a pigment with an average particle size of 100 nm or less, wherein the coated film generated after the post-baking has an optical density of 0.8/?m to 2.0/?m, a roughness of 3.0 nm or less, and no residue; and an organic light emitting display device comprising the pixel defining layer obtained by the method which has improved display reliability and lifetime as well as vivid colors.
    Type: Application
    Filed: October 5, 2023
    Publication date: April 25, 2024
    Applicant: DUK SAN NEOLUX CO., LTD.
    Inventors: Jun BAE, Changmin LEE, Yeon Soo LEE, Jin Hyun KIM, Ju Cheol KWON, Hak Young LEE, Soung Yun MUN, Kyung Soo KIM
  • ACTIVE RECTIFIER HAVING MAXIMUM POWER TRANSFER AND MAXIMUM EFFICIENCY OVER DISTANCE
    Publication number: 20190181682
    Abstract: Provided is a wireless power reception device including: a gate driver for generating a gate signal for switching between a turn-on voltage and a turn-off voltage; a rectifier connected to both ends of an inductor and including FETs whose on/off states are controlled by the gate signal; a rectifier output detection unit for sensing an output value of the rectifier; and an impedance control unit for controlling an impedance of the rectifier by controlling at least one of a duty ratio of the gate signal and a turn-on voltage for turning on the FET based on the output value.
    Type: Application
    Filed: November 26, 2018
    Publication date: June 13, 2019
    Inventors: Hak Yun KIM, Kang-Yoon LEE, Young-Jun PARK, Sung-Jin OH, Sang-Yun KIM, Byeong-Gi JANG, Seong-Mun PARK, Ki-Deok KIM
  • Developing unit transferring device, image forming apparatus employing the developing unit transferring device, and developing unit separating method of the image forming apparatus
    Patent number: 10168659
    Abstract: An image forming apparatus includes a tray on which a plurality of developing units are mounted, and a position adjustment unit that is disposed on at least one side of the tray, is movable with respect to the tray, and rotatably supports the plurality of developing units. As the position adjustment unit is moved with respect to the tray, the plurality of developing units are rotated and positions of the plurality of developing units are adjusted by the position adjustment unit.
    Type: Grant
    Filed: November 30, 2016
    Date of Patent: January 1, 2019
    Assignee: HP PRINTING KOREA CO., LTD.
    Inventor: Hak-yun Kim
  • DEVELOPING UNIT TRANSFERRING DEVICE, IMAGE FORMING APPARATUS EMPLOYING THE DEVELOPING UNIT TRANSFERRING DEVICE, AND DEVELOPING UNIT SEPARATING METHOD OF THE IMAGE FORMING APPARATUS
    Publication number: 20170176923
    Abstract: An image forming apparatus includes a tray on which a plurality of developing units are mounted, and a position adjustment unit that is disposed on at least one side of the tray, is movable with respect to the tray, and rotatably supports the plurality of developing units. As the position adjustment unit is moved with respect to the tray, the plurality of developing units are rotated and positions of the plurality of developing units are adjusted by the position adjustment unit.
    Type: Application
    Filed: November 30, 2016
    Publication date: June 22, 2017
    Applicant: S-Printing Solution Co., Ltd.
    Inventor: Hak-yun KIM
  • Method for manufacturing and operating a non-volatile memory
    Patent number: 7273782
    Abstract: A method for manufacturing and operating a nonvolatile memory in which a floating gate is formed on a silicon substrate to reduce the difference in heights between a memory region and a logic region so that a process margin is assured.
    Type: Grant
    Filed: July 13, 2005
    Date of Patent: September 25, 2007
    Assignee: Magnachip Semiconductor, Ltd.
    Inventor: Hak Yun Kim
  • Method for manufacturing a semiconductor device
    Patent number: 7094644
    Abstract: The present invention discloses a method for manufacturing a flash memory cell by using a trench method which can eliminate an increase of a stepped portion in a flash process as compared to a logic process by forming a floating gate on a STI portion since the floating gate is added to the flash memory as compared to a logic process.
    Type: Grant
    Filed: May 6, 2004
    Date of Patent: August 22, 2006
    Assignee: Hynix Semiconductor Inc.
    Inventor: Hak-yun Kim
  • DRAM cell having MOS capacitor and method for manufacturing the same
    Patent number: 7056790
    Abstract: A DRAM cell having a MOS capacitor and a method for manufacturing the same are disclosed.
    Type: Grant
    Filed: December 16, 2003
    Date of Patent: June 6, 2006
    Assignee: Icheon-shi
    Inventor: Hak-yun Kim
  • DRAM cell having MOS capacitor
    Publication number: 20060054955
    Abstract: A DRAM cell having a MOS capacitor and a method for manufacturing the same are disclosed.
    Type: Application
    Filed: November 3, 2005
    Publication date: March 16, 2006
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventor: Hak-yun Kim
  • Method for manufacturing a semiconductor device
    Publication number: 20050014333
    Abstract: The present invention discloses a method for manufacturing a flash memory cell by using a trench method which can eliminate an increase of a stepped portion in a flash process as compared to a logic process by forming a floating gate on a STI portion since the floating gate is added to the flash memory as compared to a logic process.
    Type: Application
    Filed: May 6, 2004
    Publication date: January 20, 2005
    Inventor: Hak-Yun Kim
  • DRAM cell having MOS capacitor and method for manufacturing the same
    Publication number: 20040126970
    Abstract: A DRAM cell having a MOS capacitor and a method for manufacturing the same are disclosed.
    Type: Application
    Filed: December 16, 2003
    Publication date: July 1, 2004
    Inventor: Hak-Yun Kim