Abstract: A light-emitting device and an apparatus including the same include a first electrode, a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes m emission units and (m-1) charge generating units, each of the charge generating units being between the emission units that are adjacent to each other, m is a natural number of 2 or greater, at least one of the (m-1) charge generating units includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer, wherein the n-type charge generating layer includes an n-type organic compound and a metal material, and wherein the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material.

Abstract: A light emitting device may include a first electrode, a first light emitting stack disposed on the first electrode, a charge generation layer disposed on the first light emitting stack, a second light emitting stack disposed on the charge generation layer, and a second electrode disposed on the second light emitting stack. Each of the first light emitting stack and the second light emitting stack includes a hole transport layer. A hole mobility of the charge generation layer is lower than a hole mobility of the hole transport layer.

Abstract: A light-emitting device and a method of manufacturing the same are provided. The light-emitting device may include a first electrode, a second electrode, and an interlayer located between the first electrode and the second electrode. The interlayer may include an emission layer that includes a first material, a second material, and a third material. The first material may include an inorganic semiconductor compound, an inorganic insulator compound, or any combination thereof. The second material may include a lanthanide metal. The third material may include an organic compound. An apparatus including the light-emitting device is provided.

Abstract: An organic light-emitting device includes an auxiliary layer located between a first electrode and a hole injection layer or a hole transport layer and including a metal fluoride. The metal of the metal fluoride may be a Group III metal having a high work function of 3.8 eV or more. The hole injection barrier at the interface between the first electrode and the hole injection layer may be adjusted by the fluoride of the high work function metal in the auxiliary layer so that the electron-hole charge balance and the efficiency of the organic light-emitting device may be improved.

Abstract: A light-emitting device and an apparatus including the same include a first electrode, a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes m emission units and (m?1) charge generating units, each of the charge generating units being between the emission units that are adjacent to each other, m is a natural number of 2 or greater, at least one of the (m?1) charge generating units includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer, wherein the n-type charge generating layer includes an n-type organic compound and a metal material, and wherein the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material.

Abstract: Embodiments provide a light-emitting device and an electronic apparatus including the same. The light-emitting device includes a first electrode, a second electrode facing the first electrode, and an interlayer between the first electrode and the second electrode. The interlayer includes m emitting parts, and m?1 charge generation parts between two adjacent ones of the emitting parts, wherein m is an integer of 2 or more. At least one of the charge generation parts includes an n-type charge generation layer, a first p-type charge generation layer, and a second p-type charge generation layer. A band gap of the second p-type charge generation layer is greater than a band gap of the first p-type charge generation layer.

Abstract: A light-emitting device and an apparatus including the same include a first electrode, a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes m emission units and (m?1) charge generating units, each of the charge generating units being between the emission units that are adjacent to each other, m is a natural number of 2 or greater, at least one of the (m?1) charge generating units includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer, wherein the n-type charge generating layer includes an n-type organic compound and a metal material, and wherein the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material.

Abstract: A light-emitting device includes: a first electrode; a second electrode facing the first electrode; light-emitting units in the number of n between the first electrode and the second electrode; and a charge-generation unit(s) in the number of n?1 between the adjacent light-emitting units. The light-emitting units each include an emission layer, and at least one of the charge-generation unit(s) includes an n-type charge-generation layer, a p-type charge-generation layer, and an interlayer between the n-type charge-generation layer and the p-type charge-generation layer.

Abstract: An embodiment provides a light emitting device including: a first electrode; a second electrode overlapping the first electrode in a plan view; and a light emitting part disposed between the first electrode and the second electrode. The second electrode includes a first layer disposed on the light emitting part and including a first organic material, and a metal thin film layer disposed on the first layer and including a first metal. The light emitting part includes an emission layer, a hole transport region disposed between the first electrode and the emission layer, and an electron transport region disposed between the emission layer and the second electrode. The first layer is disposed on the electron transport region.

Abstract: A light-emitting device includes: a first electrode; a second electrode that overlaps the first electrode; m emission parts positioned between the first electrode and the second electrode; and (m-1) charge generating layers disposed between adjacent emission parts.

Abstract: A light-emitting device includes a first electrode; a second electrode facing the first electrode; m emission units between the first electrode and the second electrode; and m?1 charge-generating unit(s) between adjacent ones of the emission units, where m is a natural number of 2 or more. The emission units each include an emission layer. At least one of the charge-generating unit(s) includes an n-type charge-generating layer and a p-type charge-generating layer; and the n-type charge-generating layer includes a first material and a second material. The first material includes an organic electron transport compound; and the second material includes at least one selected from an alkali metal, an alkali metal alloy, an alkaline earth metal, an alkaline earth metal alloy, a lanthanide metal, and a lanthanide metal alloy. The light-emitting device may have improved hole and electron balance, a decreased driving voltage, and excellent efficiency and/or lifespan characteristics.

Abstract: A light-emitting device includes a second electrode that includes: a first layer including a first metal having a work function with an absolute value of 5.2 eV or less and a second metal having an electrical conductivity of 1×107 S/m or more; and a second layer consisting of the second metal having the electrical conductivity of 1×107 S/m or more. The first metal and the second metal are different from each other, a thickness of the first layer is from 1 ? to 30 ?, and a thickness of the second layer is from 10 ? to 110 ?.

Abstract: A light emitting element includes a first electrode, a hole transport region disposed on the first electrode, an emission layer disposed on the hole transport region, an electron transport region which is disposed on the emission layer and includes an electron transport layer and an electron injection layer disposed on the electron transport layer, and a second electrode disposed on the electron transport region, wherein the electron injection layer includes a host represented by Formula A or Formula B, and a metal dopant, and the metal dopant includes Ag, Bi, Mg, Li, Yb, Cu, La, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, or Lu, thereby improving electron injection characteristics and having excellent or suitable luminous efficiency.

Abstract: A display apparatus includes a first electrode on a substrate, a second electrode facing the first electrode, and an emission layer between the first electrode and the second electrode, wherein the second electrode includes a first conductive layer including a first base metal and a first additive metal that is different from the first base metal, a second conductive layer on the first conductive layer and including a single metal material, and a third conductive layer on the second conductive layer and including a second base metal and a second additive metal that is different from the second base metal.

Abstract: A display apparatus including a pixel electrode disposed on a substrate, an opposite electrode disposed to face the pixel electrode, a first emission layer and a second emission layer disposed on the first emission layer and overlapping each other between the pixel electrode and the opposite electrode, and a charge generation layer disposed between the first emission layer and the second emission layer, in which the charge generation layer includes an n-type charge generation layer, a p-type charge generation layer, and a metal interlayer disposed between the n-type charge generation layer and the p-type charge generation layer, and the metal interlayer includes metal having a work function of about ?6.0 eV to about ?3.5 eV.

Abstract: A light-emitting device and an electronic apparatus including the same are provided. The light-emitting device includes: a first electrode; a second electrode facing the first electrode; m emission units stacked between the first electrode and the second electrode and including an emission layer; and m?1 charge generation layers each between two neighboring emission units from among the m emission units, wherein m is an integer of 2 or more, at least one of the m emission units includes an inorganic mixed layer between the first electrode and the emission layer, and the inorganic mixed layer includes an inorganic insulating material and an inorganic semiconductor material.

Abstract: A light-emitting device and an apparatus including the same include a first electrode, a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes m emission units and (m?1) charge generating units, each of the charge generating units being between the emission units that are adjacent to each other, m is a natural number of 2 or greater, at least one of the (m?1) charge generating units includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer, wherein the n-type charge generating layer includes an n-type organic compound and a metal material, and wherein the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material.

Abstract: A light-emitting device and a method of manufacturing the same are provided. The light-emitting device may include a first electrode, a second electrode, and an interlayer located between the first electrode and the second electrode. The interlayer may include an emission layer that includes a first material, a second material, and a third material. The first material may include an inorganic semiconductor compound, an inorganic insulator compound, or any combination thereof. The second material may include a lanthanide metal. The third material may include an organic compound. An apparatus including the light-emitting device is provided.

Abstract: An organic light-emitting device includes an auxiliary layer located between a first electrode and a hole injection layer or a hole transport layer and including a metal fluoride. The metal of the metal fluoride may be a Group III metal having a high work function of 3.8 eV or more. The hole injection barrier at the interface between the first electrode and the hole injection layer may be adjusted by the fluoride of the high work function metal in the auxiliary layer so that the electron-hole charge balance and the efficiency of the organic light-emitting device may be improved.

Abstract: A light-emitting device includes a first electrode; a second electrode facing the first electrode; m emission units between the first electrode and the second electrode; and m?1 charge-generating unit(s) between adjacent ones of the emission units, where m is a natural number of 2 or more. The emission units each include an emission layer. At least one of the charge-generating unit(s) includes an n-type charge-generating layer and a p-type charge-generating layer; and the n-type charge-generating layer includes a first material and a second material. The first material includes an organic electron transport compound; and the second material includes at least one selected from an alkali metal, an alkali metal alloy, an alkaline earth metal, an alkaline earth metal alloy, a lanthanide metal, and a lanthanide metal alloy. The light-emitting device may have improved hole and electron balance, a decreased driving voltage, and excellent efficiency and/or lifespan characteristics.