Patents by Inventor Hakeem B. Akinmade-Yusuff

Hakeem B. Akinmade-Yusuff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of reducing critical dimension process bias differences between narrow and wide damascene wires
    Patent number: 8450212
    Abstract: A method including forming an organic polymer layer (OPL) on a substrate; forming a patterned photoresist layer having a first opening and a second opening over the OPL, the second opening wider than the first opening; performing a first reactive ion etch (RIE) to form a first trench and a second trench in the organic layer, the second trench wider than the first trench, the first trench extending into but not through the organic polymer layer, the second trench extending through the OPL to the substrate, the first RIE forming a first polymer layer on sidewalls of the first trench and a second polymer layer on sidewalls of the second trench, the second polymer layer thicker than the first polymer layer; and performing a second RIE to extend the first trench through the OPL to the substrate, the second RIE removing the second polymer layer from sidewalls of the second trench.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: May 28, 2013
    Assignee: International Business Machines Corporation
    Inventors: Matthew S. Angyal, Oluwafemi O. Ogunsola, Hakeem B. Akinmade-Yusuff
  • METHOD OF REDUCING CRITICAL DIMENSION PROCESS BIAS DIFFERENCES BETWEEN NARROW AND WIDE DAMASCENE WIRES
    Publication number: 20130005147
    Abstract: A method including forming an organic polymer layer (OPL) on a substrate; forming a patterned photoresist layer having a first opening and a second opening over the OPL, the second opening wider than the first opening; performing a first reactive ion etch (RIE) to form a first trench and a second trench in the organic layer, the second trench wider than the first trench, the first trench extending into but not through the organic polymer layer, the second trench extending through the OPL to the substrate, the first RIE forming a first polymer layer on sidewalls of the first trench and a second polymer layer on sidewalls of the second trench, the second polymer layer thicker than the first polymer layer; and performing a second RIE to extend the first trench through the OPL to the substrate, the second RIE removing the second polymer layer from sidewalls of the second trench.
    Type: Application
    Filed: June 28, 2011
    Publication date: January 3, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Matthew S. Angyal, Oluwafemi O. Ogunsola, Hakeem B. Akinmade-Yusuff