Patents by Inventor Hakeem Yusuff

Hakeem Yusuff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Three dimensional integration and methods of through silicon via creation
    Patent number: 8586431
    Abstract: A method includes patterning a photoresist layer on a structure to define an opening and expose a first planar area on a substrate layer, forming doped portions of the substrate layer in the first planar area, removing a portion of the photoresist to form a second opening defining a second planar area on the substrate layer, and etching to form a first cavity having a first depth defined by the first opening to expose a first contact in the structure and to form a second cavity defined by the second opening to expose a second contact in the structure.
    Type: Grant
    Filed: April 26, 2013
    Date of Patent: November 19, 2013
    Assignee: International Business Machines Corporation
    Inventors: Mukta G. Farooq, Emily R. Kinser, Richard Wise, Hakeem Yusuff
  • Three dimensional integration and methods of through silicon via creation
    Patent number: 8569154
    Abstract: A method includes patterning a photoresist layer on a structure to define an opening and expose a first planar area on a sacrificial substrate layer, etching to the exposed first planar area to form a cavity having a first depth in the structure, removing a portion of the photoresist to increase the size of the opening to define a second planar area on the sacrificial substrate layer, forming a doped portion in the sacrificial substrate layer, and etching the cavity to increase the depth of the cavity to expose a first conductor in the structure and to increase the planar area and depth of a portion of the cavity to expose a second conductor in the structure.
    Type: Grant
    Filed: March 16, 2012
    Date of Patent: October 29, 2013
    Assignee: International Business Machines Corporation
    Inventors: Mukta G. Farooq, Emily R. Kinser, Richard Wise, Hakeem Yusuff
  • THREE DIMENSIONAL INTEGRATION AND METHODS OF THROUGH SILICON VIA CREATION
    Publication number: 20130237054
    Abstract: A method includes patterning a photoresist layer on a structure to define an opening and expose a first planar area on a substrate layer, forming doped portions of the substrate layer in the first planar area, removing a portion of the photoresist to form a second opening defining a second planar area on the substrate layer, and etching to form a first cavity having a first depth defined by the first opening to expose a first contact in the structure and to form a second cavity defined by the second opening to expose a second contact in the structure.
    Type: Application
    Filed: April 26, 2013
    Publication date: September 12, 2013
    Applicant: International Business Machines Corporation
    Inventors: Mukta G. Farooq, Emily R. Kinser, Richard Wise, Hakeem Yusuff
  • Three dimensional integration and methods of through silicon via creation
    Patent number: 8492252
    Abstract: A method includes patterning a photoresist layer on a structure to define an opening and expose a first planar area on a substrate layer, forming doped portions of the substrate layer in the first planar area, removing a portion of the photoresist to form a second opening defining a second planar area on the substrate layer, and etching to form a first cavity having a first depth defined by the first opening to expose a first contact in the structure and to form a second cavity defined by the second opening to expose a second contact in the structure.
    Type: Grant
    Filed: March 16, 2012
    Date of Patent: July 23, 2013
    Assignee: International Business Machines Corporation
    Inventors: Mukta G. Farooq, Emily R. Kinser, Richard Wise, Hakeem Yusuff
  • Three dimensional integration and methods of through silicon via creation
    Patent number: 8415238
    Abstract: A method includes patterning a photoresist layer on a structure to define an opening and expose a first planar area on a substrate layer, etching the exposed planar area to form a cavity having a first depth in the structure, removing a second portion of the photoresist to expose a second planar area on the substrate layer, forming a doped portion in the second planar area, and etching the cavity to expose a first conductor in the structure and the doped portion to expose a second conductor in the structure.
    Type: Grant
    Filed: January 14, 2010
    Date of Patent: April 9, 2013
    Assignee: International Business Machines Corporation
    Inventors: Mukta G. Farooq, Emily R. Kinser, Richard Wise, Hakeem Yusuff
  • Three dimensional integration with through silicon vias having multiple diameters
    Patent number: 8399180
    Abstract: A method is disclosed which includes patterning a photoresist layer on a substrate of a structure, removing a first portion of the photoresist layer to expose a first area of the substrate, etching the first area to form a cavity having a first depth, removing a second portion of the photoresist to expose an additional area of the substrate, and etching the cavity to expose a first conductor in the structure and the additional area to expose a second conductor in the structure.
    Type: Grant
    Filed: January 14, 2010
    Date of Patent: March 19, 2013
    Assignee: International Business Machines Corporation
    Inventors: Mukta G. Farooq, Ramona Kei, Emily R. Kinser, Anthony D. Lisi, Richard Wise, Hakeem Yusuff
  • Three Dimensional Integration and Methods of Through Silicon Via Creation
    Publication number: 20120190189
    Abstract: A method includes patterning a photoresist layer on a structure to define an opening and expose a first planar area on a sacrificial substrate layer, etching to the exposed first planar area to form a cavity having a first depth in the structure, removing a portion of the photoresist to increase the size of the opening to define a second planar area on the sacrificial substrate layer, forming a doped portion in the sacrificial substrate layer, and etching the cavity to increase the depth of the cavity to expose a first conductor in the structure and to increase the planar area and depth of a portion of the cavity to expose a second conductor in the structure.
    Type: Application
    Filed: March 16, 2012
    Publication date: July 26, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Mukta G. Farooq, Emily R. Kinser, Richard Wise, Hakeem Yusuff
  • Three Dimensional Integration and Methods of Through Silicon Via Creation
    Publication number: 20120190196
    Abstract: A method includes patterning a photoresist layer on a structure to define an opening and expose a first planar area on a substrate layer, forming doped portions of the substrate layer in the first planar area, removing a portion of the photoresist to form a second opening defining a second planar area on the substrate layer, and etching to form a first cavity having a first depth defined by the first opening to expose a first contact in the structure and to form a second cavity defined by the second opening to expose a second contact in the structure.
    Type: Application
    Filed: March 16, 2012
    Publication date: July 26, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Mukta G. Farooq, Emily R. Kinser, Richard Wise, Hakeem Yusuff
  • Three Dimensional Integration With Through Silicon Vias Having Multiple Diameters
    Publication number: 20110171582
    Abstract: A method is disclosed which includes patterning a photoresist layer on a substrate of a structure, removing a first portion of the photoresist layer to expose a first area of the substrate, etching the first area to form a cavity having a first depth, removing a second portion of the photoresist to expose an additional area of the substrate, and etching the cavity to expose a first conductor in the structure and the additional area to expose a second conductor in the structure.
    Type: Application
    Filed: January 14, 2010
    Publication date: July 14, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Mukta G. Farooq, Ramona Kei, Emily R. Kinser, Anthony D. Lisi, Richard Wise, Hakeem Yusuff
  • Three Dimensional Integration and Methods of Through Silicon Via Creation
    Publication number: 20110171827
    Abstract: A method includes patterning a photoresist layer on a structure to define an opening and expose a first planar area on a substrate layer, etching the exposed planar area to form a cavity having a first depth in the structure, removing a second portion of the photoresist to expose a second planar area on the substrate layer, forming a doped portion in the second planar area, and etching the cavity to expose a first conductor in the structure and the doped portion to expose a second conductor in the structure.
    Type: Application
    Filed: January 14, 2010
    Publication date: July 14, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Mukta G. Farooq, Emily R. Kinser, Richard Wise, Hakeem Yusuff