Abstract: A vapor deposition apparatus includes a disc-shaped susceptor and a susceptor support member that supports and rotates the susceptor. The susceptor has a plurality of fitting grooves. The susceptor support member is provided with a plurality of support pins to be fitted in the respective plurality of fitting grooves. The fitting grooves each have an inclined portion that relatively moves the support pin with respect to the fitting groove in a circumferential direction of the susceptor with the support pin kept in contact by virtue of a self-weight of the susceptor and a positioning portion that positions the support pin relatively moved by the inclined portion at a specific position in the circumferential direction. The inclined portion and the positioning portion are formed continuously in a radial direction of the susceptor.

Abstract: Provided is an epitaxial growth apparatus which makes it possible to prevent the production of debris between a preheat ring and a lower liner without fracturing the preheat ring. The epitaxial growth apparatus includes: a chamber; an upper liner and a lower liner that are disposed on an inner wall of the chamber; a susceptor being provided inside the chamber; and a preheat ring that is disposed on a supporting portion protruding in an opening of the lower liner and is disposed on the outer circumference of the susceptor. The preheat ring is not supported by the supporting portion in at least a part of a region that is right above a region where the semiconductor wafer passes in a transfer path in which the semiconductor wafer is loaded into the chamber to be set on the susceptor.

Abstract: A wafer transfer device includes a transport unit and a placement unit for placing a silicon wafer transferred by the transport unit onto a susceptor. The placement unit includes a plurality of lift pins and a relative movement mechanism for relatively moving the plurality of lift pins and the susceptor. At least one of the transport unit or the placement unit is configured to bring a predetermined lift pin into the first contact with a lower side of the silicon wafer when the silicon wafer is supported by the plurality of lift pins.

Abstract: A vapor deposition apparatus includes a disc-shaped susceptor and a susceptor support member that supports and rotates the susceptor. The susceptor has a plurality of fitting grooves. The susceptor support member is provided with a plurality of support pins to be fitted in the respective plurality of fitting grooves. The fitting grooves each have an inclined portion that relatively moves the support pin with respect to the fitting groove in a circumferential direction of the susceptor with the support pin kept in contact by virtue of a self-weight of the susceptor and a positioning portion that positions the support pin relatively moved by the inclined portion at a specific position in the circumferential direction. The inclined portion and the positioning portion are formed continuously in a radial direction of the susceptor.

Abstract: An epitaxial growth apparatus that can provide an improved thickness uniformity of an epitaxial film is provided. An epitaxial growth apparatus in accordance with the present disclosure includes a susceptor and a preheat ring surrounding a side of the susceptor having a gap interposed therebetween. A width of the gap at least in part between the susceptor and the preheat ring is set to be longer than a width w1 of the gap between the susceptor and the preheat ring in the vicinity of the reactant gas inlet.

Abstract: An epitaxial growth apparatus that can provide an improved thickness uniformity of an epitaxial film is provided. An epitaxial growth apparatus in accordance with the present disclosure includes a susceptor 20 and a preheat ring 60 surrounding a side of the susceptor 20 having a gap interposed therebetween. A width of the gap at least in part between the susceptor 20 and the preheat ring 60 is set to be longer than a width w1 of the gap between the susceptor 20 and the preheat ring 60 in the vicinity of the reactant gas inlet.