Patents by Inventor Haldorai Yuvaraj

Haldorai Yuvaraj has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods
    Patent number: 8790470
    Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: July 29, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyo-san Lee, Chang-Ki Hong, Kun-Tack Lee, Woo-Gwan Shim, Jeong-Nam Han, Jung-Min Oh, Kwon-Taek Lim, Ha-Soo Hwang, Haldorai Yuvaraj, Jae-Mok Jung
  • Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods
    Patent number: 8585917
    Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: November 19, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyo-san Lee, Chang-Ki Hong, Kun-Tack Lee, Woo-Gwan Shim, Jeong-Nam Han, Jung-Min Oh, Kwon-Taek Lim, Ha-Soo Hwang, Haldorai Yuvaraj, Jae-Mok Jung
  • Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods
    Patent number: 8084367
    Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
    Type: Grant
    Filed: May 23, 2007
    Date of Patent: December 27, 2011
    Assignees: Samsung Electronics Co., Ltd, Pukyong National University
    Inventors: Hyo-san Lee, Chang-Ki Hong, Kun-Tack Lee, Woo-Gwan Shim, Jeong-Nam Han, Jung-Min Oh, Kwon-Taek Lim, Ha-Soo Hwang, Haldorai Yuvaraj, Jae-Mok Jung