Abstract: The methods and systems described provide for radiation assisted material deposition, removal, and planarization at a surface, edge, and/or bevel of a workpiece such as a semiconductor wafer. Exemplary processes performed on a workpiece surface having topographical features include radiation assisted electrochemical material deposition, which produces an adsorbate layer outside of the features to suppress deposition outside of the features and to encourage, through charge conservation, deposition into the features to achieve, for example, a planar surface profile. A further exemplary process is radiation assisted electrochemical removal of material, which produces an adsorbate layer in the features to suppress removal of material from the features and to encourage, through charge conservation, removal of material outside of the features so that, for example, a planar surface profile is achieved.

Abstract: The present invention provides an apparatus for electrochemical mechanical processing of a surface of a workpiece by utilizing a process solution. The apparatus of the present invention includes an electrode touching the process solution, a belt workpiece surface influencing device extended between a supply spool and a receiving spool. During the process, the surface of the workpiece is placed in proximity of the workpiece surface influencing device and the process solution is flowed through the process section and onto the surface while a potential difference is applied between the electrode and the surface of the workpiece.

Abstract: A system for optionally depositing or etching a layer of a wafer includes mask plate opposed to the wafer with the mask plate having a plurality of openings that transport a solution to the wafer. An electrode assembly has a first electrode member and a second electrode member having channels that operatively interface a peripheral and center part of the wafer. The channels transport the solution to the mask.

Abstract: The present invention provides an apparatus for electrochemical mechanical processing of a surface of a workpiece by utilizing a process solution. The apparatus of the present invention includes an electrode touching the process solution, a belt workpiece surface influencing device extended between a supply spool and a receiving spool. During the process, the surface of the workpiece is placed in proximity of the workpiece surface influencing device and the process solution is flowed through the process section and onto the surface while a potential difference is applied between the electrode and the surface of the workpiece.

Abstract: A system for optionally depositing or etching a layer of a wafer includes mask plate opposed to the wafer with the mask plate having a plurality of openings that transport a solution to the wafer. An electrode assembly has a first electrode member and a second electrode member having channels that operatively interface a peripheral and center part of the wafer. The channels transport the solution to the mask.