Patents by Inventor Hamada Ahmed

Hamada Ahmed has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11874340
    Abstract: One example discloses an open-circuit detector, comprising: a first current source configured to inject a current at an output of a closed-loop circuit; a detector configured to monitor a voltage of the closed-loop circuit; wherein the detector is configured to indicate whether the voltage monitored exceeds a predetermined threshold voltage; a controller configured to regulate the current injected by the first current source; wherein the controller is configured to set an open-circuit flag if the current injected caused the voltage to exceed the predetermined threshold voltage.
    Type: Grant
    Filed: May 31, 2022
    Date of Patent: January 16, 2024
    Assignee: NXP USA, Inc.
    Inventors: Mohammed Mansri, Mahraj Sivaraj, Hamada Ahmed, Tarek Hakam
  • Publication number: 20230384396
    Abstract: One example discloses an open-circuit detector, comprising: a first current source configured to inject a current at an output of a closed-loop circuit; a detector configured to monitor a voltage of the closed-loop circuit; wherein the detector is configured to indicate whether the voltage monitored exceeds a predetermined threshold voltage; a controller configured to regulate the current injected by the first current source; wherein the controller is configured to set an open-circuit flag if the current injected caused the voltage to exceed the predetermined threshold voltage.
    Type: Application
    Filed: May 31, 2022
    Publication date: November 30, 2023
    Inventors: Mohammed Mansri, Mahraj Sivaraj, Hamada Ahmed, Tarek Hakam
  • Publication number: 20180150098
    Abstract: A reference circuit includes a bandgap core circuit and a cascode amplifier. The bandgap core circuit includes a first bipolar junction transistor (BJT), a second BJT having a control electrode coupled to a control electrode of the first BJT, a first resistor coupled to the first BJT and the second BJT, and a second resistor coupled to the second BJT. The cascode amplifier circuit includes a first branch coupled to the first BJT and a second branch coupled to the second resistor.
    Type: Application
    Filed: November 29, 2016
    Publication date: May 31, 2018
    Inventors: JOHN M. PIGOTT, IVAN VICTOROVICH KOCHKIN, HAMADA AHMED
  • Patent number: 9983614
    Abstract: A reference circuit includes a bandgap core circuit and a cascode amplifier. The bandgap core circuit includes a first bipolar junction transistor (BJT), a second BJT having a control electrode coupled to a control electrode of the first BJT, a first resistor coupled to the first BJT and the second BJT, and a second resistor coupled to the second BJT. The cascode amplifier circuit includes a first branch coupled to the first BJT and a second branch coupled to the second resistor.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: May 29, 2018
    Assignee: NXP USA, INC.
    Inventors: John M. Pigott, Ivan Victorovich Kochkin, Hamada Ahmed
  • Patent number: 9176179
    Abstract: A method of measuring a capacitor value comprises the steps of loading the capacitor up to a given voltage value; obtaining a first measure of a time for discharging the capacitor by a fixed voltage drop, the discharge of the capacitor being caused by a first current; reloading the capacitor up to the given voltage value; obtaining a second measure of a time for discharging the capacitor by the fixed voltage drop, the discharge of the capacitor being caused by the first current and by a second current of known value added to said first current; and determining the capacitor value from the difference between the first measure and the second measure, based on the given voltage drop or the given time, respectively, and based further on the known value of the given second current.
    Type: Grant
    Filed: April 22, 2011
    Date of Patent: November 3, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Erwan Hemon, Hamada Ahmed, Pierre Turpin
  • Publication number: 20140043034
    Abstract: A method of measuring a capacitor value comprises the steps of loading the capacitor up to a given voltage value; obtaining a first measure of a time for discharging the capacitor by a fixed voltage drop, the discharge of the capacitor being caused by a first current; reloading the capacitor up to the given voltage value; obtaining a second measure of a time for discharging the capacitor by the fixed voltage drop, the discharge of the capacitor being caused by the first current and by a second current of known value added to said first current; and determining the capacitor value from the difference between the first measure and the second measure, based on the given voltage drop or the given time, respectively, and based further on the known value of the given second current.
    Type: Application
    Filed: April 22, 2011
    Publication date: February 13, 2014
    Applicant: Freescale Semiconductor, Inc.
    Inventors: Erwan Hemon, Hamada Ahmed, Pierre Turpin
  • Patent number: 8558520
    Abstract: An electrical circuit for manipulating at least one of a voltage and a current on a bus wire comprises a first switch having a first gate, a first source, and a first potential reduction unit. The first potential reduction unit is suitable for lowering a potential difference between the first gate and the first source of the first switch, wherein the lowering of the potential difference is caused by a shutting-off of a first control voltage.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: October 15, 2013
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Alexis Huot-Marchand, Hamada Ahmed, Patrice Besse, Nicolas Jarrige
  • Publication number: 20110175592
    Abstract: An electrical circuit for manipulating at least one of a voltage and a current on a bus wire comprises a first switch having a first gate, a first source, and a first potential reduction unit. The first potential reduction unit is suitable for lowering a potential difference between the first gate and the first source of the first switch, wherein the lowering of the potential difference is caused by a shutting-off of a first control voltage.
    Type: Application
    Filed: September 30, 2008
    Publication date: July 21, 2011
    Applicant: Freescale Semiconductor, Inc.
    Inventors: Alexis Huot-Marchand, Hamada Ahmed, Patrice Besse, Nicolas Jarrige