Abstract: An optical element 10 for transmitting light therethrough along a predetermined direction and modulating the light comprises a structure 11 having a first region R1 and a second region R2 periodically arranged with respect to the first region R1 along a plane perpendicular to the predetermined direction, the first and second regions R1, R2 having respective refractive indexes different from each other, and properties of transmitting the light therethrough.

Abstract: A signal charge collecting region is disposed inside a charge generating region so as to be surrounded by the charge generating region, and collects signal charges from the charge generating region. An unnecessary charge collecting region is disposed outside the charge generating region so as to surround the charge generating region, and collects unnecessary charges from the charge generating region. A transfer electrode is disposed between the signal charge collecting region and the charge generating region, and causes the signal charges from the charge generating region to flow into the signal charge collecting region in response to an input signal. An unnecessary charge collecting gate electrode is disposed between the unnecessary charge collecting region and the charge generating region, and causes the unnecessary charges from the charge generating region to flow into the unnecessary charge collecting region in response to an input signal.

Abstract: A method of manufacturing microchannel plate according to an embodiment of the present invention includes: a first step of fabricating a multifiber having a polygonal cross-section by bundling a plurality of fibers; a second step of fabricating a microchannel plate base material by use of a plurality of the multifibers; and a third step of fabricating a microchannel plate out of the microchannel plate base material. The plurality of fibers include: a first fiber whose predetermined-thickness outer circumferential part surrounding a center part including a core is formed of a predetermined-component glass material; and a second fiber whose both center part including a core and outer circumferential part surrounding the same are formed of the predetermined-component glass material. The second fiber is arranged at, at least, one corner of a polygonal cross-section of the multifiber.

Abstract: A solid-state imaging device of one embodiment includes a light receiving section including of a plurality of pixels 11 having respective photodiodes, the pixels being two-dimensionally arrayed in M rows and N columns; N readout lines disposed for the respective columns and connected with the photodiodes PD included in the pixels of a respective columns via readout switches; a signal output section for outputting a voltage value according to an amount of charge input through each of the readout lines; and a vertical shift register for controlling an opening and closing operation of the readout switch for each of the rows. A contour between one side along a row direction of the light receiving section and a pair of sides along a column direction has a stepped shape. A dummy photodiode region is formed along the stepped contour of the light receiving section.

Abstract: The drug evaluation device obtains, by an attenuated reflection method using a terahertz wave, an evaluation absorption spectrum for a frequency with respect to a liquid to be evaluated. When crystalline particles are suspended in a liquid, an absorption peak having a peak area corresponding to the amount of suspension appears in its absorption spectrum. Therefore, whether or not and by what ratio crystalline particles are suspended in the liquid can be determined according to whether or not the absorption peak exists and the peak area. When amorphous particles are suspended in the liquid, the baseline of its absorption spectrum lowers according to the ratio of amorphous particles suspended in the liquid. Therefore, whether or not and by what ratio amorphous particles are suspended in the liquid can be determined according to the lowering amount of the baseline.

Abstract: An ion detector 1A for detecting positive ions is provided with a chamber 2 having an ion entrance 3 which allows positive ions to enter, a conversion dynode 9 which is disposed in the chamber 2 and to which a negative potential is applied, and an avalanche photodiode 30 that is disposed in the chamber 2 and has an electron incident surface 30a which is opposed to the conversion dynode 9 and also into which secondary electrons emitted from the conversion dynode 9 are made incident. The electron incident surface 30a is located closer to the conversion dynode 9 than a positioning part 14 which supports the avalanche photodiode 30 in the grounded chamber 2.

Abstract: A photodiode array has a plurality of photodetector channels formed on an n-type substrate having an n-type semiconductor layer, with a light to be detected being incident to the photodetector channels. The array comprises: a p?-type semiconductor layer on the n-type semiconductor layer of the substrate; resistors is provided to each of the photodetector channels and is connected to a signal conductor at one end thereof; and an n-type separating part between the plurality of photodetector channels. The p?-type semiconductor layer forms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.

Abstract: A method of manufacturing an optical element module in which an optical element and a semiconductor circuit element are mounted on one surface of a silicon substrate, a mirror surface inclined at approximately 45 degrees is formed on the other surface, and an optical fiber facing the mirror surface is disposed in a V groove formed along the other surface, the method of manufacturing includes the steps of forming the mirror surface and V-shaped side surfaces of the V groove simultaneously by first crystal anisotropic etching on the other surface, and forming an attaching surface substantially perpendicular to the one surface and the other surface, which is formed at an end side of the V groove, and for attaching an end of the optical fiber, by second crystal anisotropic etching in a crystal plane orientation different from that of the first crystal anisotropic etching.

Abstract: The image processing device 10 includes a template preparation unit 15 for preparing, from a template included in pixels of M rows and M columns (M is an integer not less than 3) corresponding to a molecular model, a partial template corresponding to a shape for which a shape of the molecular model is divided, an evaluation value calculation unit 17 for evaluating, in the optical image, by use of the partial template, matching between the optical image and the partial template to calculate an evaluation value for every plurality of the attention pixels, and a molecular location identification unit 18 for identifying the molecular location in the optical image based on the evaluation value.

Abstract: An object to be processed 1 comprising a substrate 4 and a plurality of functional devices 15 formed on a front face 3 of the substrate 4 is irradiated with laser light L while locating a converging point P within the substrate 4, so as to form at least one row of a divided modified region 72, at least one row of a quality modified region 71 positioned between the divided modified region 72 and the front face 3 of the substrate 4, and at least one row of an HC modified region 73 positioned between the divided modified region 72 and a rear face 21 of the substrate 4 for one line to cut 5. Here, in a direction along the line to cut, a forming density of the divided modified region 72 is made lower than that of the quality modified region 71 and that of the HC modified region 73.

Abstract: A solid-state imaging device 1A includes a CCD-type solid-state imaging element 10 having an imaging plane 12 formed of M×N pixels that are two-dimensionally arrayed in M rows and N columns, N signal readout circuits 20 arranged on one end side in the column direction for each of the columns with respect to the imaging plane 12, and N signal readout circuits 30 arranged on the other end side in the column direction for each of the columns with respect to the imaging plane 12, a semiconductor element 50 for digital-converting and then sequentially outputting as serial signals electrical signals output from the signal readout circuits 20 for each of the columns, and a semiconductor element 60 for digital-converting and then sequentially outputting as serial signals electrical signals output from the signal readout circuits 30 for each of the columns.

Abstract: A solid-state imaging device 2A includes a CCD-type solid-state imaging element 10 having an imaging plane 12 formed of M×N pixels that are two-dimensionally arrayed in M rows and N columns and N signal readout circuits 20 arranged on one end side in the column direction for each of the columns with respect to the plane 12 and for outputting electrical signals according to the magnitudes of charges taken out of the respective columns, respectively, a C-MOS-type semiconductor element 50 for digital-converting and sequentially outputting as serial signals electrical signals output from the circuits 20 for each of the columns, a heat transfer member 80 having a main surface 81a and a back surface 81b, and a cooling block 84 provided on the surface 81b, and the semiconductor element 50 and the surface 81a of the heat transfer member 80 are bonded to each other.

Abstract: In an X-ray line sensor 1, a scintillator layer 24 that absorbs X-rays in a low-energy range and emits light and a scintillator layer 26 that absorbs X-rays in a high-energy range and emits light are brought in contact with each other, and further, the thickness of the scintillator layer 24 on the front side is thinner than that of the scintillator layer 26 on the rear side. These make the amount of mismatch small between a light emitting position P1 in the scintillator layer 24 and a light emitting position P2 in the scintillator layer 26 to X-rays in the low-energy range and X-rays in the high-energy range entered at the same angle from the front side, so that at this time, light emitted by the scintillator layer 24 and light emitted by the scintillator layer 26 are detected by a photo-detecting section 16 and a photo-detecting section 23 facing each other.

Abstract: A laser machining device 1 comprises a laser light source 10, a spatial light modulator 20, a controller 22, a converging optical system 30, and a shielding member 40. The phase-modulating spatial light modulator 20 inputs a laser beam outputted from the laser light source 10, displays a hologram modulating a phase of the laser beam at each of a plurality of pixels arranged two-dimensionally, and outputs the phase-modulated laser beam. The controller 22 causes the spatial light modulator 20 to display a plurality of holograms sequentially, lets the converging optical system 30 converge the laser beam outputted from the spatial light modulator 20 at converging positions having a fixed number of M, selectively places N converging positions out of the M converging positions into a machining region 91, and machines an object to be machined 90.