Abstract: A method and system that are directed to determining compatibility of integrated circuit (IC) packages with X-ray inspection. The method comprises determining one or more packaging specifications and one or more imaging specifications, generating an X-ray discernability model based on one or more X-ray image samples and one or more X-ray simulations, determining, using the X-ray discernability model, one or more threshold values of one or more DFI parameters that are associated with a target IC package type, assigning one or more compatibility scores to the one or more DFI parameters based on a comparison between one or more test DFI parameter values that are associated with a test IC package design and the one or more threshold values, and generating an X-ray compatibility metric based on the one or more compatibility scores.

Abstract: Methods and apparatuses for gas detection are disclosed, including providing a device comprising: a light source configured to emit light; an array of vertical photonic crystal waveguides (VPCWs), wherein the VPCWs of the array of VPCWs are configured to slow and guide the light; and a detector array, wherein the detectors of the detector array are configured to measure the intensity of the light passing through each of the VPCWs of the array of VPCWs; wherein the VPCWs of the array of VPCWs slow and guide light having a wavelength within the absorption bands of the one or more gas species to be detected; exposing the apparatus to a gaseous environment such that gas from the environment flows through the array of VPCWs; and reading values from the detectors of the detector array to identify the presence of the one or more gas species. Other embodiments are described and claimed.

Abstract: Methods and apparatuses for gas detection are disclosed, including providing a device comprising: a light source configured to emit light; an array of vertical photonic crystal waveguides (VPCWs), wherein the VPCWs of the array of VPCWs are configured to slow and guide the light; and a detector array, wherein the detectors of the detector array are configured to measure the intensity of the light passing through each of the VPCWs of the array of VPCWs; wherein the VPCWs of the array of VPCWs slow and guide light having a wavelength within the absorption bands of the one or more gas species to be detected; exposing the apparatus to a gaseous environment such that gas from the environment flows through the array of VPCWs; and reading values from the detectors of the detector array to identify the presence of the one or more gas species. Other embodiments are described and claimed.

Abstract: This disclosure provides systems, methods, and apparatus related to optical modulators. In one aspect, a device includes a substrate, a first electrically insulating material disposed over the substrate, a first graphene layer and a second graphene layer disposed in the first electrically insulating material and being separated by the first electrically insulating material, and a waveguide disposed on the first electrically insulating material. At least a portion of the second graphene layer overlays at least a portion of the first graphene layer. The waveguide overlays both the first graphene layer and the second graphene layer.

Abstract: A light-emitting device is provided. The light-emitting device can include a main cavity formed within an epitaxial structure that is configured to generate light in response to having an electrical current provided thereto. The light-emitting device can also include a plurality of feedback cavities also formed within the epitaxial structure, where each of the plurality of feedback cavities are transversely-coupled with the main cavity to receive light from the main cavity and reflect at least some feedback light back into the main cavity. The light-emitting device may provide enhanced modulation bandwidth or ultra-high speed communication capabilities.

Abstract: This disclosure provides systems, methods, and apparatus related to optical modulators. In one aspect, a device includes a substrate, a first electrically insulating material disposed over the substrate, a first graphene layer and a second graphene layer disposed in the first electrically insulating material and being separated by the first electrically insulating material, and a waveguide disposed on the first electrically insulating material. At least a portion of the second graphene layer overlays at least a portion of the first graphene layer. The waveguide overlays both the first graphene layer and the second graphene layer.

Abstract: A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

Abstract: A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

Abstract: A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

Abstract: A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.