Patents by Inventor Hamed PARVANEH

Hamed PARVANEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DEFECT FREE SILICON GERMANIUM (SiGe) EPITAXY GROWTH IN A LOW-K SPACER CAVITY AND METHOD FOR PRODUCING THE SAME
    Publication number: 20190326112
    Abstract: A method of cleaning a low-k spacer cavity by a low energy RF plasma at a specific substrate temperature for a defect free epitaxial growth of Si, SiGe, Ge, III-V and III-N and the resulting device are provided. Embodiments include providing a substrate with a low-k spacer cavity; cleaning the low-k spacer cavity with a low energy RF plasma at a substrate temperature between room temperature to 600° C.; and forming an epitaxy film or a RSD in the low-k spacer cavity subsequent to the low energy RF plasma cleaning.
    Type: Application
    Filed: April 19, 2018
    Publication date: October 24, 2019
    Inventors: Shahab SIDDIQUI, Hamed PARVANEH, Mira PARK, Annie LEVESQUE, Yinxiao YANG, Hongyi MI, Asli SIRMAN