Patents by Inventor Hamid R. AMIR FIROUZKOUHI

Hamid R. AMIR FIROUZKOUHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Predistortion in radio frequency transmitter
    Patent number: 9755577
    Abstract: A power amplifier circuit includes an amplifier MOSFET and a predistorter MOSFET. The predistorter MOSFET source and drain are connected together, and the predistorter MOSFET is connected between the gate of the amplifier MOSFET and a second bias voltage signal. This biasing of the predistorter MOSFET causes it to provide a nonlinear capacitance at the gate of the amplifier MOSFET. The combined non-linear capacitances of the amplifier MOSFET and predistorter MOSFET provide predistortion that promotes cancellation of the distortion or nonlinearity contributed by the amplifier MOSFET alone.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: September 5, 2017
    Assignee: Skyworks Solutions, Inc.
    Inventors: Hamid R. Amir Firouzkouhi, Bipul Agarwal, Hasan Akyol
  • PREDISTORTION IN RADIO FREQUENCY TRANSMITTER
    Publication number: 20160118942
    Abstract: A power amplifier circuit includes an amplifier MOSFET and a predistorter MOSFET. The predistorter MOSFET source and drain are connected together, and the predistorter MOSFET is connected between the gate of the amplifier MOSFET and a second bias voltage signal. This biasing of the predistorter MOSFET causes it to provide a nonlinear capacitance at the gate of the amplifier MOSFET. The combined non-linear capacitances of the amplifier MOSFET and predistorter MOSFET provide predistortion that promotes cancellation of the distortion or nonlinearity contributed by the amplifier MOSFET alone.
    Type: Application
    Filed: December 18, 2015
    Publication date: April 28, 2016
    Inventors: Hamid R. Amir Firouzkouhi, Bipul Agarwal, Hasan Akyol
  • Transmitter with predistorter
    Patent number: 9252719
    Abstract: A power amplifier circuit includes an amplifier MOSFET and a predistorter MOSFET. The predistorter MOSFET source and drain are connected together, and the predistorter MOSFET is connected between the gate of the amplifier MOSFET and a second bias voltage signal. This biasing of the predistorter MOSFET causes it to provide a nonlinear capacitance at the gate of the amplifier MOSFET. The combined non-linear capacitances of the amplifier MOSFET and predistorter MOSFET provide predistortion that promotes cancellation of the distortion or nonlinearity contributed by the amplifier MOSFET alone.
    Type: Grant
    Filed: April 24, 2015
    Date of Patent: February 2, 2016
    Assignee: Skyworks Solutions, Inc.
    Inventors: Hamid R. Amir Firouzkouhi, Bipul Agarwal, Hasan Akyol
  • TRANSMITTER WITH PREDISTORTER
    Publication number: 20150229279
    Abstract: A power amplifier circuit includes an amplifier MOSFET and a predistorter MOSFET. The predistorter MOSFET source and drain are connected together, and the predistorter MOSFET is connected between the gate of the amplifier MOSFET and a second bias voltage signal. This biasing of the predistorter MOSFET causes it to provide a nonlinear capacitance at the gate of the amplifier MOSFET. The combined non-linear capacitances of the amplifier MOSFET and predistorter MOSFET provide predistortion that promotes cancellation of the distortion or nonlinearity contributed by the amplifier MOSFET alone.
    Type: Application
    Filed: April 24, 2015
    Publication date: August 13, 2015
    Inventors: Hamid R. Amir Firouzkouhi, Bipul Agarwal, Hasan Akyol
  • Radio frequency power amplifier with linearizing predistorter
    Patent number: 9048802
    Abstract: A power amplifier circuit includes an amplifier MOSFET and a predistorter MOSFET. The predistorter MOSFET source and drain are connected together, and the predistorter MOSFET is connected between the gate of the amplifier MOSFET and a second bias voltage signal. This biasing of the predistorter MOSFET causes it to provide a nonlinear capacitance at the gate of the amplifier MOSFET. The combined non-linear capacitances of the amplifier MOSFET and predistorter MOSFET provide predistortion that promotes cancellation of the distortion or nonlinearity contributed by the amplifier MOSFET alone.
    Type: Grant
    Filed: February 16, 2012
    Date of Patent: June 2, 2015
    Assignee: Skyworks Solutions, Inc.
    Inventors: Hamid R. Amir Firouzkouhi, Bipul Agarwal, Hasan Akyol
  • RADIO FREQUENCY POWER AMPLIFIER WITH LINEARIZING PREDISTORTER
    Publication number: 20120149316
    Abstract: A power amplifier circuit includes an amplifier MOSFET and a predistorter MOSFET. The predistorter MOSFET source and drain are connected together, and the predistorter MOSFET is connected between the gate of the amplifier MOSFET and a second bias voltage signal. This biasing of the predistorter MOSFET causes it to provide a nonlinear capacitance at the gate of the amplifier MOSFET. The combined non-linear capacitances of the amplifier MOSFET and predistorter MOSFET provide predistortion that promotes cancellation of the distortion or nonlinearity contributed by the amplifier MOSFET alone.
    Type: Application
    Filed: February 16, 2012
    Publication date: June 14, 2012
    Applicant: SKYWORKS SOLUTIONS, INC.
    Inventors: Hamid R. AMIR FIROUZKOUHI, Bipul AGARWAL, Hasan AKYOL