Abstract: The present disclosure relates to a semiconductor module, especially a power semiconductor module, in which the heat dissipation is improved and the power density is increased. The semiconductor module may include at least two electrically insulating substrates, each having a first main surface and a second main surface opposite to the first main surface. On the first main surface of each of the substrates, at least one semiconductor device is mounted. An external terminal is connected to the first main surface of at least one of the substrates. The substrates are arranged opposite to each other so that their first main surfaces are facing each other.

Abstract: The present disclosure relates to a semiconductor module, especially a power semiconductor module, in which the heat dissipation is improved and the power density is increased. The semiconductor module may include at least two electrically insulating substrates, each having a first main surface and a second main surface opposite to the first main surface. On the first main surface of each of the substrates, at least one semiconductor device is mounted. An external terminal is connected to the first main surface of at least one of the substrates. The substrates are arranged opposite to each other so that their first main surfaces are facing each other.

Abstract: The present disclosure relates to a semiconductor module, especially a power semiconductor module, in which the heat dissipation is improved and the power density is increased. The semiconductor module may include at least two electrically insulating substrates, each having a first main surface and a second main surface opposite to the first main surface. On the first main surface of each of the substrates, at least one semiconductor device is mounted. An external terminal is connected to the first main surface of at least one of the substrates. The substrates are arranged opposite to each other so that their first main surfaces are facing each other.

Abstract: The present disclosure relates to a semiconductor module, especially a power semiconductor module, in which the heat dissipation is improved and the power density is increased. The semiconductor module may include at least two electrically insulating substrates, each having a first main surface and a second main surface opposite to the first main surface. On the first main surface of each of the substrates, at least one semiconductor device is mounted. An external terminal is connected to the first main surface of at least one of the substrates. The substrates are arranged opposite to each other so that their first main surfaces are facing each other.

Abstract: A module arrangement for power semiconductor devices, including one or more power semiconductor modules, wherein the one or more power semiconductor modules include a substrate with a first surface and a second surface being arranged opposite to the first surface, wherein the substrate is at least partially electrically insulating, wherein a conductive structure is arranged at the first surface of the substrate, wherein at least one power semiconductor device is arranged on the conductive structure and electrically connected thereto, wherein the one or more modules includes an inner volume for receiving the at least one power semiconductor device which volume is hermetically sealed from its surrounding by a module enclosure, wherein the module arrangement includes an arrangement enclosure at least partly defining a volume for receiving the one or more modules, and wherein the arrangement enclosure seals covers the volume.

Abstract: A module arrangement for power semiconductor devices, including one or more power semiconductor modules, wherein the one or more power semiconductor modules include a substrate with a first surface and a second surface being arranged opposite to the first surface, wherein the substrate is at least partially electrically insulating, wherein a conductive structure is arranged at the first surface of the substrate, wherein at least one power semiconductor device is arranged on the conductive structure and electrically connected thereto, wherein the one or more modules includes an inner volume for receiving the at least one power semiconductor device which volume is hermetically sealed from its surrounding by a module enclosure, wherein the module arrangement includes an arrangement enclosure at least partly defining a volume for receiving the one or more modules, and wherein the arrangement enclosure seals covers the volume.

Abstract: A power module (10), which is operated serially with other similar power modules in a converter valve, comprises a plurality of submodules (13a-d) connected in parallel, wherein each of the submodules includes one or several semiconductor elements connected in parallel and the power kind module is of the kind wherein if one of the submodules starts malfunctioning, the remaining ones of the submodules assume a closed circuit. The power module further comprises, for each of the submodules, a separate driver unit (14a-d) for driving the one or several semiconductor elements of that submodule, and a separate control unit (11a-d) for controlling the driver unit of that submodule. The power module may be used in HVDC or SVC apparatuses.

Abstract: A power-electronic arrangement comprising semiconductor components (102, 103, 107), a heat exchanger (110), and an electrically conductive element (109) is presented. The heat exchanger comprises evaporator channels (111) and condenser channels (112) for working fluid. The electrically conductive element comprises a contact surface providing a thermal contact to outer surfaces of walls of the evaporator channels for transferring heat from the electrically conductive element to the evaporator channels. A main current terminal of each semiconductor component is bonded to the electrically conductive element which thus forms a part of a main current circuitry of a power system. As the main current terminal is directly bonded to the electrically conductive element cooled with the heat exchanger, the temperature gradients inside the semiconductor components can be kept moderate, and thus the temperatures inside the semiconductor components can be limited.

Abstract: A fast recovery diode includes an n-doped base layer having a cathode side and an anode side opposite the cathode side. A p-doped anode layer is arranged on the anode side. The anode layer has a doping profile and includes at least two sublayers. A first one of the sublayers has a first maximum doping concentration, which is between 2*1016 cm?3 and 2*1017 cm?3 and which is higher than the maximum doping concentration of any other sublayer. A last one of the sublayers has a last sublayer depth, which is larger than any other sublayer depth. The last sublayer depth is between 90 to 120 ?m. The doping profile of the anode layer declines such that a doping concentration in a range of 5*1014 cm?3 and 1*1015 cm?3 is reached between a first depth, which is at least 20 ?m, and a second depth, which is at maximum 50 ?m. Such a profile of the doping concentration is achieved by using aluminum diffused layers as the at least two sublayers.

Abstract: A fast recovery diode includes an n-doped base layer having a cathode side and an anode side opposite the cathode side. A p-doped anode layer is arranged on the anode side. The anode layer has a doping profile and includes at least two sublayers. A first one of the sublayers has a first maximum doping concentration, which is between 2*1016 cm?3 and 2*1017 cm?3 and which is higher than the maximum doping concentration of any other sublayer. A last one of the sublayers has a last sublayer depth, which is larger than any other sublayer depth. The last sublayer depth is between 90 to 120 ?m. The doping profile of the anode layer declines such that a doping concentration in a range of 5*1014 cm?3 and 1*1015 cm?3 is reached between a first depth, which is at least 20 ?m, and a second depth, which is at maximum 50 ?m. Such a profile of the doping concentration is achieved by using aluminium diffused layers as the at least two sublayers.

Abstract: A power-electronic arrangement comprising semiconductor components (102, 103, 107), a heat exchanger (110), and an electrically conductive element (109) is presented. The heat exchanger comprises evaporator channels (111) and condenser channels (112) for working fluid. The electrically conductive element comprises a contact surface providing a thermal contact to outer surfaces of walls of the evaporator channels for transferring heat from the electrically conductive element to the evaporator channels. A main current terminal of each semiconductor component is bonded to the electrically conductive element which thus forms a part of a main current circuitry of a power system. As the main current terminal is directly bonded to the electrically conductive element cooled with the heat exchanger, the temperature gradients inside the semiconductor components can be kept moderate, and thus the temperatures inside the semiconductor components can be limited.