Patents by Inventor Hamming Lin

Hamming Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Two-piece end turn winding support
    Patent number: 11876423
    Abstract: An end winding support of a rotor of an electric machine is provided. The end winding support includes a first part and a second part. The first part includes an elongate body about which a conductive winding is wound. The elongate body has a surface defining a first groove. The second part is attached to the first part. The second part includes a body which extends outwardly from the elongate body and which has a surface defining a second groove corresponding to the first groove.
    Type: Grant
    Filed: November 4, 2021
    Date of Patent: January 16, 2024
    Assignee: HAMILTON SUNDSTRAND CORPORATION
    Inventors: Kris H. Campbell, Skyler Ripplinger, Brian C. Konopa, Kanthi Gnanam Kannan, Edward C. Allen, Hamming Lin, Luis E. Anker
  • TWO-PIECE END TURN WINDING SUPPORT
    Publication number: 20230134351
    Abstract: An end winding support of a rotor of an electric machine is provided. The end winding support includes a first part and a second part. The first part includes an elongate body about which a conductive winding is wound. The elongate body has a surface defining a first groove. The second part is attached to the first part. The second part includes a body which extends outwardly from the elongate body and which has a surface defining a second groove corresponding to the first groove.
    Type: Application
    Filed: November 4, 2021
    Publication date: May 4, 2023
    Inventors: Kris H. Campbell, Skyler Ripplinger, Brian C. Konopa, Kanthi Gnanam Kannan, Edward C. Allen, Hamming Lin, Luis E. Anker
  • Method of forming dielectric films using a plurality of oxidation gases
    Patent number: 8946036
    Abstract: A method for forming a dielectric film is disclosed. The method includes (a) exposing a substrate to a first gas pulse having a first oxygen-containing gas in a chamber; (b) exposing the substrate to multiple consecutive second gas pulses having a second oxygen-containing gas in the chamber, wherein the first oxygen-containing gas is different from the second oxygen-containing gas; and (c) sequentially after (a) and (b), exposing the substrate to a third gas pulse having a metal-containing gas in the chamber. Steps (a), (b), and (c) may be repeated any number of times to form the dielectric film with a predetermined thickness.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: February 3, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Liang-Chen Chi, Chia-Ming Tsai, Yu-Min Chang, Chin-Kun Wang, Miin-Jang Cheng, Keng-Ham Lin
  • METHOD OF FORMING DIELECTRIC FILMS USING A PLURALITY OF OXIDATION GASES
    Publication number: 20140162425
    Abstract: A method for forming a dielectric film is disclosed. The method includes (a) exposing a substrate to a first gas pulse having a first oxygen-containing gas in a chamber; (b) exposing the substrate to multiple consecutive second gas pulses having a second oxygen-containing gas in the chamber, wherein the first oxygen-containing gas is different from the second oxygen-containing gas; and (c) sequentially after (a) and (b), exposing the substrate to a third gas pulse having a metal-containing gas in the chamber. Steps (a), (b), and (c) may be repeated any number of times to form the dielectric film with a predetermined thickness.
    Type: Application
    Filed: December 7, 2012
    Publication date: June 12, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Liang-Chen Chi, Chia-Ming Tsai, Yu-Min Chang, Chin-Kun Wang, Miin-Jang Cheng, Keng-Ham Lin