Patents by Inventor Hamou Chakor

Hamou Chakor has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Aluminum implantation method
    Patent number: 6639229
    Abstract: A method of aluminum ion generation for an implantation in a semiconductor wafer, including using nitrogen trifluoride as a gas for ionizing a solid alumina element.
    Type: Grant
    Filed: December 20, 2000
    Date of Patent: October 28, 2003
    Assignee: STMicroelectronics, S.A.
    Inventor: Hamou Chakor
  • Aluminum implantation method
    Publication number: 20020043630
    Abstract: A method of aluminum ion generation for an implantation in a semiconductor wafer, including using nitrogen trifluoride as a gas for ionizing a solid alumina element.
    Type: Application
    Filed: December 20, 2000
    Publication date: April 18, 2002
    Inventor: Hamou Chakor