Abstract: A display device includes a display panel including a pixel and a sensor pixel, the pixel including a light emitting element and a driving transistor controlling a current flowing through the light emitting element, the sensor pixel including sensor transistors, a data driver that supplies a data signal to the pixel through a data line and provides a sensor data signal to the sensor pixel through a sensor data line, and a sensing driver that obtains sensing information on a current flowing through the sensor pixel. The sensor transistors are electrically connected in parallel to each other and are commonly electrically connected to the sensor data line. The sensor transistors and the driving transistor include a substantially same characteristic.

Abstract: A display panel includes an amorphous silicon gate driver in which a lower voltage than the gate-off voltage output from the gate driver is applied to an adjacent stage as a low voltage transmission signal.

Abstract: The present disclosure relates to a non-alcoholic fatty liver artificial tissue model. As compared to a conventional technology by which tissues are cultured only in Matrigel including a device composed of a decellularized liver tissue-derived extracellular matrix and a plurality of microchannels or a decellularized liver tissue-derived extracellular matrix, the present disclosure enables better mimicking of an actual non-alcoholic fatty liver disease due to the presence of Kupffer cells and hepatic stellate cells. Also, according to the present disclosure, the growth of liver organoids can be improved and fat accumulation and inflammation in the liver organoids can be caused to occur well through free fatty acid treatment, and the phenotypes of non-alcoholic fatty liver can be better expressed.

Abstract: A display device includes a light emitting sub-pixel disposed in a display area, a light receiving pixel disposed in one of the display area or a non-display area, and a touch sensing layer including a sensing conductive layer overlapping with the light receiving pixel.

Abstract: A method of manufacturing a catalyst material includes the steps of: providing a body having an open-porous foam structure and comprising at least a first metal or alloy; providing particles, each of which particles comprising at least a second metal or alloy; distributing the particles on the body; forming a structural connection between each of at least a subset of the particles and the body; and forming an oxide film on at least the subset of the particles and the body, wherein the oxide film has a catalytically active surface.

Abstract: An electronic device according to various embodiments of the present invention may comprise: a housing comprising a first surface facing in a first direction and a second surface facing in a second direction that is opposite to the first direction, the first surface comprising an at least partially transparent part and at least one opening formed adjacent to the at least partially transparent part; a camera positioned inside the housing, the camera comprising an image sensor facing in the first direction through the at least partially transparent part of the housing; and an acoustic component arranged between the first surface and the second surface, the acoustic component comprising a vibration plate configured to generate a sound such that the same moves in at least one direction selected from the first and second directions, a first passage formed in a third direction that is substantially perpendicular to the first direction such that the generated sound passes through the same, and a second passage forme

Abstract: A display device and a method of manufacturing the same are provided. The display device comprises a substrate comprising a display area in which emission areas are arranged, a main non-display area around the display area, a hole area surrounded by the display area, and an additional non-display area between the hole area and the display area; a circuit layer; a light emitting element layer; a sealing layer; a through portion in the hole area and penetrating at least the substrate; and sealing auxiliary structures in the additional non-display area and sequentially surrounding the hole area. Each of the sealing auxiliary structures comprises a first undercut portion in which a first cover layer protrudes from a first main layer; and a second undercut portion in which a second cover layer protrudes from a second main layer.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: A method for determining a sharpness index of a pulse wave signal includes receiving a pulse wave signal; determining a first reference line starting point and a second reference line starting point on the basis of a curvature of the pulse wave signal; determining a first reference line connecting the first reference line starting point and a first reference line ending point by determining the first reference line ending point by applying an intersecting tangent method to the first reference line starting point, and determining a second reference line connecting the second reference line starting point and a second reference line ending point by determining the second reference line ending point by applying the intersecting tangent method to the second reference line starting point; and determining a sharpness index by using a peak point of the pulse wave signal, the first reference line, and the second reference line.

Abstract: The present invention relates to a positive electrode active material and a lithium secondary battery using a positive electrode containing the positive electrode active material. More particularly, the present invention relates to a positive electrode active material that is able to solve a problem of increased resistance according to an increase in Ni content by forming a charge transport channel in a lithium composite oxide and a lithium secondary battery using a positive electrode containing the positive electrode active material.

Abstract: An electronic device display may have pixels formed from crystalline semiconductor light-emitting diode dies, organic light-emitting diodes, or other pixel structures. The pixels may be formed on a display panel substrate. A display panel may extend continuously across the display or multiple display panels may be tiled in two dimensions to cover a larger display area. Interconnect substrates may have outwardly facing contacts that are electrically shorted to corresponding inwardly facing contacts such as inwardly facing metal pillars associated with the display panels. The interconnect substrates may be supported by glass layers. Integrated circuits may be embedded in the display panels and/or in the interconnect substrates. A display may have an active area with pixels that includes non-spline pixels in a non-spline display portion located above a straight edge of the display and spline pixel in a spline display portion located above a curved edge of the display.

Abstract: A method of manufacturing a multilayer metal plate by electroplating includes a first forming operation of forming one of a first metal layer and a second metal layer on a substrate by electroplating, wherein the second metal layer is less recrystallized than the first metal layer, the second metal layer is comprised of nanometer-size grains, and the second metal layer has a higher level of tensile strength than the first metal layer; and a second forming operation of forming, by electroplating, a third metal layer not formed in the first forming operation on a surface of one of the first metal layer and the second metal layer formed in the first forming operation.

Abstract: Provided is a pixel driving circuit including a first circuit configured to control, in a data writing mode, a signal related to driving of one or more light-emitting elements, and a second circuit configured to supply, in a driving mode, power to the one or more light-emitting elements based on a signal transmitted from the first circuit.

Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to, based on receiving an open zone command from an external host device: based on a number of free erase units from among a plurality of erase units included in the plurality of memory cells being greater than a threshold value, allocate at least two free erase units to a first-type zone, and based on the number of the free erase units being smaller than or equal to the threshold value, allocate the at least two free erase units to a second-type zone. wherein the controller is further configured to permit a random write based on a random logical address received from the external host device for the first-type zone, and to permit a zone write based on a sequential logical address received from the external host device for the second-type zone.

Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller is further configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device in response to a request of an external host device, select two or more erase units among a plurality of erase units of the plurality of memory cells to be allocated to each of the plurality of zones based on a zone map table, fixedly and sequentially manage logical addresses of data written in the plurality of zones, wherein the controller includes an internal buffer configured to store first data to be written in a first zone from among the plurality of zones, and wherein the controller is further configured to perform a backup operation for the first data b

Abstract: A storage device, including: a nonvolatile memory device comprising a plurality of memory cells; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller is further configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, select two or more erase units from among a plurality of erase units included in the plurality of memory cells to be allocated to each zone of the plurality of zones, fixedly and sequentially manage logical addresses of data to be written in the plurality of zones, and generate at least two map tables for the each zone

Abstract: A storage device, including a nonvolatile memory device comprising a plurality of memory cells; and a controller configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, fixedly and sequentially manage logical addresses of data written in the plurality of zones, generate a first page map table corresponding to a first zone based on performing the write operation on the first zone, the first page map table comprising a logical address and a physical address of the first zone, based on the first zone being full, activate a read service, which is based on the zone map table, and based on the read service being activated, process read requests for the first zone from the external host device using the zone map table.

Abstract: A display panel includes an amorphous silicon gate driver in which a lower voltage than the gate-off voltage output from the gate driver is applied to an adjacent stage as a low voltage transmission signal.

Abstract: Provided is an analog front-end receiver including: a first equalizer including a first block switch configured to receive a first differential signal through a first node, and configured to block the first differential signal in a first operation mode; a second equalizer including a second block switch configured to receive a second differential signal through a second node, and configured to block the second differential signal in the first operation mode; a terminating resistor provided between the first node and the second node, and configured to receive the first differential signal via the first node, and receive the second differential signal via the second node; and a low pass filter configured to receive a third differential signal converted by the terminating resistor from the first differential signal, and configured to receive a fourth differential signal converted by the terminating resistor from the second differential signal.

Abstract: A semiconductor device includes a source/drain region in a fin-type active pattern, a gate structure adjacent to the source/drain region, and an insulating layer on the source/drain region and the gate structure. A shared contact plug penetrates through the insulating layer and includes a first lower portion connected to the source/drain region, a second lower portion connected to the gate structure, and an upper portion connected to upper surfaces of the first lower portion and the second lower portion. A plug spacer film is between the insulating layer and at least one of the first lower portion and the second lower portion and includes a material different from a material of the insulating layer.