Abstract: A method of operating a resistive memory device to increase a read margin includes applying a write pulse to a memory cell such that the memory cell is programmed to a target resistance state, and applying a post-write pulse to the memory cell to increase a resistance of the memory cell that is in the target resistance state, the post-write pulse being applied as a single pulse having at least n stepped voltage levels, n being an integer equal to or more than 2, and an n-th stepped voltage level of the post-write pulse is set to be lower than a minimum threshold voltage level of the target resistance state that is changed by an (n?1)-th stepped voltage level of the post-write pulse.

Abstract: A method of operating a resistive memory device to increase a read margin includes applying a write pulse to a memory cell such that the memory cell is programmed to a target resistance state, and applying a post-write pulse to the memory cell to increase a resistance of the memory cell that is in the target resistance state, the post-write pulse being applied as a single pulse having at least n stepped voltage levels, n being an integer equal to or more than 2, and an n-th stepped voltage level of the post-write pulse is set to be lower than a minimum threshold voltage level of the target resistance state that is changed by an (n?1)-th stepped voltage level of the post-write pulse.

Abstract: A method of operating a resistive memory device to increase a read margin includes applying a write pulse to a memory cell such that the memory cell is programmed to a target resistance state, and applying a post-write pulse to the memory cell to increase a resistance of the memory cell that is in the target resistance state, the post-write pulse being applied as a single pulse having at least n stepped voltage levels, n being an integer equal to or more than 2, and an n-th stepped voltage level of the post-write pulse is set to be lower than a minimum threshold voltage level of the target resistance state that is changed by an (n?1)-th stepped voltage level of the post-write pulse.

Abstract: A method of operating a resistive memory device to increase a read margin includes applying a write pulse to a memory cell such that the memory cell is programmed to a target resistance state, and applying a post-write pulse to the memory cell to increase a resistance of the memory cell that is in the target resistance state, the post-write pulse being applied as a single pulse having at least n stepped voltage levels, n being an integer equal to or more than 2, and an n-th stepped voltage level of the post-write pulse is set to be lower than a minimum threshold voltage level of the target resistance state that is changed by an (n?1)-th stepped voltage level of the post-write pulse.