Patents by Inventor Han-Bong Ko
Han-Bong Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130234100Abstract: Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.Type: ApplicationFiled: April 11, 2013Publication date: September 12, 2013Inventors: Hyeong-Geun An, Dong-Ho Ahn, Young-Soo Lim, Yong-Ho Ha, Jun-Young Jang, Dong-Won Lim, Gyeo-Re Lee, Joon-Sang Park, Han-Bong Ko, Young-Lim Park
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Patent number: 8445354Abstract: A method of manufacturing a phase-change memory device comprises forming a contact region on a substrate, forming a lower electrode electrically connected to the contact region, forming a phase-change material layer on the lower electrode using a chalcogenide compound target including carbon and metal, or carbon, nitrogen and metal, and forming an upper electrode on the phase-change material layer.Type: GrantFiled: February 8, 2012Date of Patent: May 21, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Ho Ha, Bong-Jin Kuh, Han-Bong Ko, Doo-Hwan Park, Sang-Wook Lim, Hee-Ju Shin
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Patent number: 8426840Abstract: A nonvolatile memory cell includes a substrate and a phase changeable pattern configured to retain a state of the memory cell, on the substrate. An electrically insulating layer is provided, which contains a first electrode therein in contact with the phase changeable pattern. The first electrode has at least one of an L-shape when viewed in cross section and an arcuate shape when viewed from a plan perspective. A lower portion of the first electrode may be ring-shaped when viewed from the plan perspective. The lower portion of the first electrode may also have a U-shaped cross-section. An upper portion of the first electrode may also have an arcuate shape that spans more than 180° of a circular arc.Type: GrantFiled: October 27, 2010Date of Patent: April 23, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Hyeong-Geun An, Dong-Ho Ahn, Young-Soo Lim, Yong-Ho Ha, Jun-Young Jang, Dong-Won Lim, Gyeo-Re Lee, Joon-Sang Park, Han-Bong Ko, Young-Lim Park
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Publication number: 20120142161Abstract: A method of manufacturing a phase-change memory device comprises forming a contact region on a substrate, forming a lower electrode electrically connected to the contact region, forming a phase-change material layer on the lower electrode using a chalcogenide compound target including carbon and metal, or carbon, nitrogen and metal, and forming an upper electrode on the phase-change material layer.Type: ApplicationFiled: February 8, 2012Publication date: June 7, 2012Inventors: Yong-Ho HA, Bong-Jin KUH, Han-Bong KO, Doo-Hwan PARK, Sang-Wook LIM, Hee-Ju SHIN
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Patent number: 8133429Abstract: In a method of forming a chalcogenide compound target, a first powder including germanium carbide or germanium is prepared, and a second powder including antimony carbide or antimony is prepared. A third powder including tellurium carbide or tellurium is prepared. A powder mixture is formed by mixing the first to the third powders. After a shaped is formed body by molding the powder mixture. The chalcogenide compound target is obtained by sintering the powder mixture. The chalcogenide compound target may include a chalcogenide compound that contains carbon and metal, or carbon, metal and nitrogen considering contents of carbon, metal and nitrogen, so that a phase-change material layer formed using the chalcogenide compound target may stable phase transition, enhanced crystallized temperature and increased resistance. A phase-change memory device including the phase-change material layer may have reduced set resistance and driving current while improving durability and sensing margin.Type: GrantFiled: April 19, 2010Date of Patent: March 13, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Ho Ha, Bong-Jin Kuh, Han-Bong Ko, Doo-Hwan Park, Sang-Wook Lim, Hee-Ju Shin
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Publication number: 20120032135Abstract: A phase-change material layer is formed on the lower electrode using a chalcogenide compound doped with carbon, or carbon and nitrogen. A phase-change material layer is obtained by doping a stabilizing metal into the preliminary phase-change material layer. An upper electrode is formed on the phase-change material layer. Since the phase-change material layer may have improved electrical characteristics, stability of phase transition and thermal stability, the phase-change memory unit may have reduced set resistance, enhanced durability, improved reliability, increased sensing margin, reduced driving current, etc.Type: ApplicationFiled: October 18, 2011Publication date: February 9, 2012Inventors: Bong-Jin KUH, Yong-Ho HA, Doo-Hwan PARK, Han-Bong KO, Sang-Wook LIM, Hee-Ju SHIN
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Publication number: 20110315946Abstract: A nonvolatile memory device, including a lower electrode on a semiconductor substrate, a phase change material pattern on the lower electrode, an adhesion pattern on the phase change material pattern and an upper electrode on the adhesion pattern, wherein the adhesion pattern includes a conductor including nitrogen.Type: ApplicationFiled: September 2, 2011Publication date: December 29, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Han-Bong KO, Yong-Ho Ha, Doo-Hwan Park, Bong-Jin Kuh, Hee-Ju Shin
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Patent number: 8012789Abstract: A nonvolatile memory device, including a lower electrode on a semiconductor substrate, a phase change material pattern on the lower electrode, an adhesion pattern on the phase change material pattern and an upper electrode on the adhesion pattern, wherein the adhesion pattern includes a conductor including nitrogen.Type: GrantFiled: February 18, 2009Date of Patent: September 6, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Han-Bong Ko, Yong-Ho Ha, Doo-Hwan Park, Bong-Jin Kuh, Hee-Ju Shin
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Publication number: 20110044098Abstract: A nonvolatile memory cell includes a substrate and a phase changeable pattern configured to retain a state of the memory cell, on the substrate. An electrically insulating layer is provided, which contains a first electrode therein in contact with the phase changeable pattern. The first electrode has at least one of an L-shape when viewed in cross section and an arcuate shape when viewed from a plan perspective. A lower portion of the first electrode may be ring-shaped when viewed from the plan perspective. The lower portion of the first electrode may also have a U-shaped cross-section. An upper portion of the first electrode may also have an arcuate shape that spans more than 180° of a circular arc.Type: ApplicationFiled: October 27, 2010Publication date: February 24, 2011Inventors: Hyeong-Geun An, Dong-Ho Ahn, Young-Soo Lim, Yong-Ho Ha, Jun-Young Jang, Dong-Won Lim, Gyeo-Re Lee, Joon-Sang Park, Han-Bong Ko, Young-Lim Park
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Patent number: 7824954Abstract: Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.Type: GrantFiled: July 9, 2008Date of Patent: November 2, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Hyeong-Geun An, Dong-Ho Ahn, Young-Soo Lim, Yong-Ho Ha, Jun-Young Jang, Dong-Won Lim, Gyeo-Re Lee, Joon-Sang Park, Han-Bong Ko, Young-Lim Park
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Patent number: 7817464Abstract: A phase change memory cell includes an interlayer insulating layer formed on a semiconductor substrate, and a first electrode and a second electrode disposed in the interlayer insulating layer. A phase change material layer is disposed between the first and second electrodes. The phase change material layer may be an undoped GeBiTe layer, a doped GeBiTe layer containing an impurity or a doped GeTe layer containing an impurity. The undoped GeBiTe layer has a composition ratio within a range surrounded by four points (A1(Ge21.43, Bi16.67, Te61.9), A2(Ge44.51, Bi0.35, Te55.14), A3(Ge59.33, Bi0.5, Te40.17) and A4(Ge38.71, Bi16.13, Te45.16)) represented by coordinates on a triangular composition diagram having vertices of germanium (Ge), bismuth (Bi) and tellurium (Te).Type: GrantFiled: May 11, 2007Date of Patent: October 19, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Bong-Jin Kuh, Yong-Ho Ha, Doo-Hwan Park, Jeong-Hee Park, Han-Bong Ko
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Phase-change material layer and phase-change memory device including the phase-change material layer
Patent number: 7791932Abstract: A phase-change memory device includes a substrate having a contact region, an insulating interlayer on the substrate, a lower electrode electrically connected to the contact region, a phase-change material layer pattern formed on the lower electrode, and an upper electrode formed on the phase-change material layer pattern. The phase-change material layer pattern includes a chalcogenide compound doped with carbon and at least one of nitrogen and metal. The phase-change memory device may have a considerably reduced driving current without increasing a set resistance thereof. Further, the phase-change material layer pattern may have an increased crystallization temperature so as to ensure improved data retention characteristics of the phase-change memory device.Type: GrantFiled: September 25, 2007Date of Patent: September 7, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Bong-Jin Kuh, Yong-Ho Ha, Han-Bong Ko, Doo-Hwan Park, Hee-Ju Shin, Sang-Wook Lim -
Publication number: 20100197076Abstract: In a method of forming a chalcogenide compound target, a first powder including germanium carbide or germanium is prepared, and a second powder including antimony carbide or antimony is prepared. A third powder including tellurium carbide or tellurium is prepared. A powder mixture is formed by mixing the first to the third powders. After a shaped is formed body by molding the powder mixture. The chalcogenide compound target is obtained by sintering the powder mixture. The chalcogenide compound target may include a chalcogenide compound that contains carbon and metal, or carbon, metal and nitrogen considering contents of carbon, metal and nitrogen, so that a phase-change material layer formed using the chalcogenide compound target may stable phase transition, enhanced crystallized temperature and increased resistance. A phase-change memory device including the phase-change material layer may have reduced set resistance and driving current while improving durability and sensing margin.Type: ApplicationFiled: April 19, 2010Publication date: August 5, 2010Inventors: Yong-Ho Ha, Bong-Jin Kuh, Han-Bong Ko, Doo-Hwan Park, Sang-Wook Lim, Hee-Ju Shin
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Patent number: 7727458Abstract: In a method of forming a chalcogenide compound target, a first powder including germanium carbide or germanium is prepared, and a second powder including antimony carbide or antimony is prepared. A third powder including tellurium carbide or tellurium is prepared. A powder mixture is formed by mixing the first to the third powders. After a shaped is formed body by molding the powder mixture. The chalcogenide compound target is obtained by sintering the powder mixture. The chalcogenide compound target may include a chalcogenide compound that contains carbon and metal, or carbon, metal and nitrogen considering contents of carbon, metal and nitrogen, so that a phase-change material layer formed using the chalcogenide compound target may stable phase transition, enhanced crystallized temperature and increased resistance. A phase-change memory device including the phase-change material layer may have reduced set resistance and driving current while improving durability and sensing margin.Type: GrantFiled: September 25, 2007Date of Patent: June 1, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Ho Ha, Bong-Jin Kuh, Han-Bong Ko, Doo-Hwan Park, Sang-Wook Lim, Hee-Ju Shin
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Publication number: 20090206318Abstract: A nonvolatile memory device, including a lower electrode on a semiconductor substrate, a phase change material pattern on the lower electrode, an adhesion pattern on the phase change material pattern and an upper electrode on the adhesion pattern, wherein the adhesion pattern includes a conductor including nitrogen.Type: ApplicationFiled: February 18, 2009Publication date: August 20, 2009Inventors: Han-Bong Ko, Yong-Ho Ha, Doo-Hwan Park, Bong-Jin Kuh, Hee-Ju Shin
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Patent number: 7563639Abstract: In a semiconductor memory device and a method of manufacturing the same, an insulating layer is formed on a substrate having a logic region on which a first pad is provided and a cell region on which a second pad and a lower electrode are subsequently provided. The insulating layer is etched to be a first insulating layer pattern having a first opening exposing the first pad. A first plug is formed in the first opening. The first insulating layer pattern where the first plug is formed is etched to be a second insulating layer pattern having a second opening exposing the lower electrode. A second plug including a phase-changeable material is formed in the second opening. A conductive wire and an upper electrode are formed on the first plug and the second plug, respectively.Type: GrantFiled: April 9, 2007Date of Patent: July 21, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Hee-Ju Shin, Jong-Chan Shin, Soon-Oh Park, Hyeong-Geun An, Han-Bong Ko
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Publication number: 20090017577Abstract: Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.Type: ApplicationFiled: July 9, 2008Publication date: January 15, 2009Inventors: Hyeong-Geun An, Dong-Ho Ahn, Young-Soo Lim, Yong-Ho Ha, Jun-Young Jang, Dong-Won Lim, Gyeo-Re Lee, Joon-Sang Park, Han-Bong Ko, Young-Lim Park
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Publication number: 20080075844Abstract: In a method of forming a chalcogenide compound target, a first powder including germanium carbide or germanium is prepared, and a second powder including antimony carbide or antimony is prepared. A third powder including tellurium carbide or tellurium is prepared. A powder mixture is formed by mixing the first to the third powders. After a shaped is formed body by molding the powder mixture. The chalcogenide compound target is obtained by sintering the powder mixture. The chalcogenide compound target may include a chalcogenide compound that contains carbon and metal, or carbon, metal and nitrogen considering contents of carbon, metal and nitrogen, so that a phase-change material layer formed using the chalcogenide compound target may stable phase transition, enhanced crystallized temperature and increased resistance. A phase-change memory device including the phase-change material layer may have reduced set resistance and driving current while improving durability and sensing margin.Type: ApplicationFiled: September 25, 2007Publication date: March 27, 2008Inventors: Yong Ha, Bong-Jin Kuh, Han-Bong Ko, Doo-Hwan Park, Sang-Wook Lim, Hee-Ju Shin
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Publication number: 20080075843Abstract: In a method of manufacturing a phase-change memory unit, a lower electrode electrically connected to a contact region is formed on a substrate. A preliminary phase-change material layer is formed on the lower electrode using a chalcogenide compound doped with carbon, or carbon and nitrogen. A phase-change material layer is obtained by doping a stabilizing metal into the preliminary phase-change material layer. An upper electrode is formed on the phase-change material layer. Since the phase-change material layer may have improved electrical characteristics, stability of phase transition and thermal stability, the phase-change memory unit may have reduced set resistance, enhanced durability, improved reliability, increased sensing margin, reduced driving current, etc.Type: ApplicationFiled: September 25, 2007Publication date: March 27, 2008Inventors: Bong-Jin Kuh, Yong-Ho Ha, Doo-Hwan Park, Han-Bong Ko, Sang-Wook Lim, Hee-Ju Shin
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Phase-Change Material Layer and Phase-Change Memory Device Including the Phase-Change Material Layer
Publication number: 20080073637Abstract: A phase-change memory device includes a substrate having a contact region, an insulating interlayer on the substrate, a lower electrode electrically connected to the contact region, a phase-change material layer pattern formed on the lower electrode, and an upper electrode formed on the phase-change material layer pattern. The phase-change material layer pattern includes a chalcogenide compound doped with carbon and at least one of nitrogen and metal. The phase-change memory device may have a considerably reduced driving current without increasing a set resistance thereof. Further, the phase-change material layer pattern may have an increased crystallization temperature so as to ensure improved data retention characteristics of the phase-change memory device.Type: ApplicationFiled: September 25, 2007Publication date: March 27, 2008Inventors: Bong-Jin Kuh, Yong-Ho Ha, Han-Bong Ko, Doo-Hwan Park, Hee-Ju Shin, Sang-Wook Lim