Abstract: The present application relates to a peptide having protective activity against cell damage caused by particulate matter, and to uses for the peptide.

Abstract: A pressure sensor includes: a base substrate including an embossed pattern; a first conductive layer disposed on the base substrate; a pressure sensitive material layer disposed on the first conductive layer such that its electrical characteristic is varied corresponding to a strain applied thereto, the pressure sensitive material layer including a dielectric and nanoparticles dispersed in the dielectric; and a second conductive layer disposed on the pressure sensitive material layer, wherein the dielectric and the nanoparticle include materials having pyroelectricities of polarities opposite to each other.

Abstract: A pressure sensor includes: a base substrate including an embossed pattern; a first conductive layer disposed on the base substrate; a pressure sensitive material layer disposed on the first conductive layer such that its electrical characteristic is varied corresponding to a strain applied thereto, the pressure sensitive material layer including a dielectric and nanoparticles dispersed in the dielectric; and a second conductive layer disposed on the pressure sensitive material layer, wherein the dielectric and the nanoparticle include materials having pyroelectricities of polarities opposite to each other.

Abstract: Disclosed are apparatuses, methods, and method of manufacture of a microfluidic device for detecting biomolecules in sweat, and a biosensor patch for detecting biomolecules in sweat, in which the microfluidic device and a biosensor are combined, the device and the patch being capable of detecting various target molecules present in sweat by electrochemical signals and also detecting the concentration of a target molecule.

Abstract: Disclosed are a two-dimensional semiconductor in which an energy band gap changes with thickness, a manufacturing method therefor, and a semiconductor device comprising the same. A two-dimensional semiconductor according to an embodiment comprises: a first layer having a first thickness; and a second layer having a second thickness, wherein the first thickness and the second thickness are different from each other, the first layer forms a first junction with a first electrode, and the second layer forms a second junction with a second electrode.

Abstract: Disclosed are a two-dimensional semiconductor in which an energy band gap changes with thickness, a manufacturing method therefor, and a semiconductor device comprising the same. A two-dimensional semiconductor according to an embodiment comprises: a first layer having a first thickness; and a second layer having a second thickness, wherein the first thickness and the second thickness are different from each other, the first layer forms a first junction with a first electrode, and the second layer forms a second junction with a second electrode.

Abstract: A pressure sensor includes: a base substrate including an embossed pattern; a first conductive layer disposed on the base substrate; a pressure sensitive material layer disposed on the first conductive layer such that its electrical characteristic is varied corresponding to a strain applied thereto, the pressure sensitive material layer including a dielectric and nanoparticles dispersed in the dielectric; and a second conductive layer disposed on the pressure sensitive material layer, wherein the dielectric and the nanoparticle include materials having pyroelectricities of polarities opposite to each other.

Abstract: There is provided a substrate for a stretchable device, the substrate having a mogul pattern formed thereon, wherein the mogul pattern has a plurality of bumps protruding from a virtual reference plane, and a continuous valley formed between the bumps, wherein the valley surrounds the bumps, and the bumps are regularly or irregularly arranged and have substantially the same size and shape, wherein a combination of the bumps and the valley has a continuous curved surface.