Patents by Inventor Han Cha

Han Cha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230224890
    Abstract: The present disclosure relates to a configuration request in wireless communications. According to an embodiment of the present disclosure, a multi-universal subscriber identity module (MUSIM) user equipment (UE) may request candidate MUSIM gaps, and indicate priority information for the candidate MUSIM gaps along with the request. Therefore, the UE can prevent the inefficient gap configuration regarding the second network operation even when the first network is unable to configure all requested gaps.
    Type: Application
    Filed: November 18, 2022
    Publication date: July 13, 2023
    Inventors: Han CHA, Sunghoon JUNG, Seungjune YI
  • Patent number: 11330444
    Abstract: Disclosed is a control device for determining cognitive radio terminals. The device comprises: a spectrum sensing information storage unit for receiving and storing interference amount information for each frequency from spectrum sensing devices; a communication success probability calculation unit for receiving position information from secondary user terminals within a network and calculating a communication success probability of each secondary user terminal; a reinforced learning unit for setting the communication success probability as an initial access probability for each of the secondary user terminals and enabling learning such that an access probability, a state function, and a utility function are updated for each of the secondary user terminals at each iteration; and a cognitive radio terminal determining unit for, when the leaning is completed in the reinforced learning unit, selecting a secondary user terminal to execute cognitive radio communication on the basis of a final access probability.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: May 10, 2022
    Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Seong-Lyun Kim, Han Cha, Jee Min Kim
  • Publication number: 20210334649
    Abstract: An apparatus for distributed reinforcement learning includes: a local neural network for receiving state information regarding a surrounding environment and estimating an action execution probability from the state information according to a previously learned pattern estimation method; a loss estimation unit for applying learning to the local neural network by estimating a loss value from the action execution probability and a global action execution probability transmitted from a central server; a local experience memory for mapping and storing the state information and the action execution probability; a clustering unit for clustering the state information stored in the local experience memory according to a pre-designated method to classify the state information into state clusters having proxy state information configured beforehand; and a local proxy memory for mapping and storing the proxy state information and proxy action execution probability corresponding to each state cluster for transmitting to t
    Type: Application
    Filed: December 17, 2020
    Publication date: October 28, 2021
    Inventors: Seong-Lyun KIM, Han CHA
  • Patent number: 11134189
    Abstract: An image device may include a clock generator to generate a first output clock of a first frequency, a link layer to generate a control signal for changing the first frequency and output first parallel data including first frame information, a detector to generate a collision avoidance command to change the first frequency to a second frequency during a vertical blanking time, and a frequency changer to receive the collision avoidance command from the detector and transmit a frequency change command to the link layer. The link layer transmits the control signal to the clock generator based on the frequency change command. The vertical blanking time is a time period from a first time point at which the first parallel data is not output from the link layer to a second time point at which second parallel data is output.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: September 28, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ji Un Jeong, Ki Woon Kim, Chae Ryung Kim, Ho Young Kim, Eun Seung Yun, Han Soo Lee, Gyeong Han Cha
  • Patent number: 11071110
    Abstract: Provided is a device for allocating a dynamic frequency for a secondary user in a cognitive radio network. The device includes: an OP map generation unit for generating an opportunity map, which represents a probability of successful communication of the secondary transmitter in each region of the cognitive radio network, by using one or more of spectrum sensing information, which is received from a spectrum sensor that has completed sensing and includes identifier information, location information, and a sensing measurement matrix, an access request message, which is received from the secondary transmitter and includes identifier information, location information, and operable band information, and the density and transmission powers of primary transmitters; and a response message generation unit for generating a response message, which includes the channel having the highest probability of successful communication and the probability of successful communication, based on the generated map.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: July 20, 2021
    Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Seong-Lyun Kim, Jee Min Kim, Hye Sung Kim, Han Cha, Seung-Woo Ko
  • Patent number: 10992447
    Abstract: A high-speed interface apparatus and method of correcting skew in the apparatus are provided. A high-speed transmitter includes a transmission D-PHY module that generates and transmits a clock signal through a clock channel, generates a deskew synchronous code and test data in response to a deskew request signal, transmits the deskew synchronous code followed by the test data through a data channel, and transmits a normal synchronous code followed by normal data through the data channel in normal mode.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: April 27, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Han Soo Lee, Sung Jun Kim, Chae Ryung Kim, Dong Uk Park, Youn Woong Chung, Jung Myung Choi, Han Kyul Lim, Gyeong Han Cha
  • Publication number: 20210044985
    Abstract: Disclosed is a control device for determining cognitive radio terminals. The device comprises: a spectrum sensing information storage unit for receiving and storing interference amount information for each frequency from spectrum sensing devices; a communication success probability calculation unit for receiving position information from secondary user terminals within a network and calculating a communication success probability of each secondary user terminal; a reinforced learning unit for setting the communication success probability as an initial access probability for each of the secondary user terminals and enabling learning such that an access probability, a state function, and a utility function are updated for each of the secondary user terminals at each iteration; and a cognitive radio terminal determining unit for, when the leaning is completed in the reinforced learning unit, selecting a secondary user terminal to execute cognitive radio communication on the basis of a final access probability.
    Type: Application
    Filed: December 13, 2018
    Publication date: February 11, 2021
    Inventors: Seong-Lyun KIM, Han CHA, Jee Min KIM
  • Publication number: 20210006387
    Abstract: A high-speed interface apparatus and method of correcting skew in the apparatus are provided. A high-speed transmitter includes a transmission D-PHY module that generates and transmits a clock signal through a clock channel, generates a deskew synchronous code and test data in response to a deskew request signal, transmits the deskew synchronous code followed by the test data through a data channel, and transmits a normal synchronous code followed by normal data through the data channel in normal mode.
    Type: Application
    Filed: September 17, 2020
    Publication date: January 7, 2021
    Inventors: HAN SOO LEE, SUNG JUN KIM, CHAE RYUNG KIM, DONG UK PARK, YOUN WOONG CHUNG, JUNG MYUNG CHOI, HAN KYUL LIM, GYEONG HAN CHA
  • Publication number: 20200396378
    Abstract: An image device may include a clock generator to generate a first output clock of a first frequency, a link layer to generate a control signal for changing the first frequency and output first parallel data including first frame information, a detector to generate a collision avoidance command to change the first frequency to a second frequency during a vertical blanking time, and a frequency changer to receive the collision avoidance command from the detector and transmit a frequency change command to the link layer. The link layer transmits the control signal to the clock generator based on the frequency change command. The vertical blanking time is a time period from a first time point at which the first parallel data is not output from the link layer to a second time point at which second parallel data is output.
    Type: Application
    Filed: January 15, 2020
    Publication date: December 17, 2020
    Inventors: Ji Un JEONG, Ki Woon KIM, Chae Ryung KIM, Ho Young KIM, Eun Seung YUN, Han Soo LEE, Gyeong Han CHA
  • Patent number: 10790958
    Abstract: A high-speed interface apparatus and method of correcting skew in the apparatus are provided. A high-speed transmitter includes a transmission D-PHY module that generates and transmits a clock signal through a clock channel, generates a deskew synchronous code and test data in response to a deskew request signal, transmits the deskew synchronous code followed by the test data through a data channel, and transmits a normal synchronous code followed by normal data through the data channel in normal mode.
    Type: Grant
    Filed: April 25, 2019
    Date of Patent: September 29, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Han Soo Lee, Sung Jun Kim, Chae Ryung Kim, Dong Uk Park, Youn Woong Chung, Jung Myung Choi, Han Kyul Lim, Gyeong Han Cha
  • Publication number: 20200214010
    Abstract: Provided is a device for allocating a dynamic frequency for a secondary user in a cognitive radio network. The device includes: an OP map generation unit for generating an opportunity map, which represents a probability of successful communication of the secondary transmitter in each region of the cognitive radio network, by using one or more of spectrum sensing information, which is received from a spectrum sensor that has completed sensing and includes identifier information, location information, and a sensing measurement matrix, an access request message, which is received from the secondary transmitter and includes identifier information, location information, and operable band information, and the density and transmission powers of primary transmitters; and a response message generation unit for generating a response message, which includes the channel having the highest probability of successful communication and the probability of successful communication, based on the generated map.
    Type: Application
    Filed: January 18, 2017
    Publication date: July 2, 2020
    Inventors: Seong-Lyun KIM, Jee Min KIM, Hye Sung KIM, Han CHA, Seung-Woo KO
  • Patent number: 10395987
    Abstract: The disclosure is related to MV transistors with reduced gate induced drain leakage (GIDL) and impact ionization. The reduced GILD and impact ionization are achieved without increasing device pitch of the MV transistor. A low voltage (LV) device region and a medium voltage (MV) device region are disposed on the substrate. Non-extended spacers are disposed on the sidewalls of the LV gate in the LV device region; extended L shaped spacers are disposed on the sidewalls of the MV gate in the MV device region. The non-extended spacers and extended L shape spacers are patterned simultaneously. Extended L shaped spacers displace the MV heavily doped (HD) regions a greater distance from at least one sidewall of the MV gate to reduce the GIDL and impact ionization of the MV transistor.
    Type: Grant
    Filed: January 9, 2017
    Date of Patent: August 27, 2019
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Chia Ching Yeo, Kiok Boone Elgin Quek, Khee Yong Lim, Jae Han Cha, Yung Fu Chong
  • Publication number: 20190260569
    Abstract: A high-speed interface apparatus and method of correcting skew in the apparatus are provided. A high-speed transmitter includes a transmission D-PHY module that generates and transmits a clock signal through a clock channel, generates a deskew synchronous code and test data in response to a deskew request signal, transmits the deskew synchronous code followed by the test data through a data channel, and transmits a normal synchronous code followed by normal data through the data channel in normal mode.
    Type: Application
    Filed: April 25, 2019
    Publication date: August 22, 2019
    Inventors: Han Soo Lee, Sung Jun Kim, Chae Ryung Kim, Dong Uk Park, Youn Woong Chung, Jung Myung Choi, Han Kyul Lim, Gyeong Han Cha
  • Patent number: 10313101
    Abstract: A high-speed interface apparatus and method of correcting skew in the apparatus are provided. A high-speed transmitter includes a transmission D-PHY module that generates and transmits a clock signal through a clock channel, generates a deskew synchronous code and test data in response to a deskew request signal, transmits the deskew synchronous code followed by the test data through a data channel, and transmits a normal synchronous code followed by normal data through the data channel in normal mode.
    Type: Grant
    Filed: August 27, 2018
    Date of Patent: June 4, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Han Soo Lee, Sung Jun Kim, Chae Ryung Kim, Dong Uk Park, Youn Woong Chung, Jung Myung Choi, Han Kyul Lim, Gyeong Han Cha
  • Publication number: 20190058574
    Abstract: A high-speed interface apparatus and method of correcting skew in the apparatus are provided. A high-speed transmitter includes a transmission D-PHY module that generates and transmits a clock signal through a clock channel, generates a deskew synchronous code and test data in response to a deskew request signal, transmits the deskew synchronous code followed by the test data through a data channel, and transmits a normal synchronous code followed by normal data through the data channel in normal mode.
    Type: Application
    Filed: August 27, 2018
    Publication date: February 21, 2019
    Inventors: HAN SOO LEE, SUNGJUN KIM, CHAE RYUNG KIM, DONG UK PARK, YOUN WOONG CHUNG, JUNG MYUNG CHOI, HAN KYUL LIM, GYEONG HAN CHA
  • Patent number: 10075283
    Abstract: A high-speed interface apparatus and method of correcting skew in the apparatus are provided. A high-speed transmitter includes a transmission D-PHY module that generates and transmits a clock signal through a clock channel, generates a deskew synchronous code and test data in response to a deskew request signal, transmits the deskew synchronous code followed by the test data through a data channel, and transmits a normal synchronous code followed by normal data through the data channel in normal mode.
    Type: Grant
    Filed: August 3, 2017
    Date of Patent: September 11, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Han Soo Lee, Sung Jun Kim, Chae Ryung Kim, Dong Uk Park, Youn Woong Chung, Jung Myung Choi, Han Kyul Lim, Gyeong Han Cha
  • Patent number: 10025345
    Abstract: A system on chip is provided. The system on chip includes a delay control circuit configured to generate delayed clock signals having different delays, based on each of a first rising edge and a first falling edge of an input clock signal, and generate delayed data signals having different delays, based on each of a second rising edge and a second falling edge of an input data signal. The system on chip further includes a de-skew control circuit configured to control the delay control circuit to adjust a delay of each of the first rising edge, the first falling edge, the second rising edge, and the second falling edge.
    Type: Grant
    Filed: October 5, 2016
    Date of Patent: July 17, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Phil Jae Jeon, Gyeong Han Cha
  • Patent number: 9832005
    Abstract: A high-speed interface apparatus and method of correcting skew in the apparatus are provided. A high-speed transmitter includes a transmission D-PHY module that generates and transmits a clock signal through a clock channel, generates a deskew synchronous code and test data in response to a deskew request signal, transmits the deskew synchronous code followed by the test data through a data channel, and transmits a normal synchronous code followed by normal data through the data channel in normal mode.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: November 28, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Han Soo Lee, Sung Jun Kim, Chae Ryung Kim, Dong Uk Park, Youn Woong Chung, Jung Myung Choi, Han Kyul Lim, Gyeong Han Cha
  • Publication number: 20170331616
    Abstract: A high-speed interface apparatus and method of correcting skew in the apparatus are provided. A high-speed transmitter includes a transmission D-PHY module that generates and transmits a clock signal through a clock channel, generates a deskew synchronous code and test data in response to a deskew request signal, transmits the deskew synchronous code followed by the test data through a data channel, and transmits a normal synchronous code followed by normal data through the data channel in normal mode.
    Type: Application
    Filed: August 3, 2017
    Publication date: November 16, 2017
    Inventors: HAN SOO LEE, SUNG JUN KIM, CHAE RYUNG KIM, DONG UK PARK, YOUN WOONG CHUNG, JUNG MYUNG CHOI, HAN KYUL LIM, GYEONG HAN CHA
  • Publication number: 20170200649
    Abstract: The disclosure is related to MV transistors with reduced gate induced drain leakage (GIDL) and impact ionization. The reduced GILD and impact ionization are achieved without increasing device pitch of the MV transistor. A low voltage (LV) device region and a medium voltage (MV) device region are disposed on the substrate. Non-extended spacers are disposed on the sidewalls of the LV gate in the LV device region; extended L shaped spacers are disposed on the sidewalls of the MV gate in the MV device region. The non-extended spacers and extended L shape spacers are patterned simultaneously. Extended L shaped spacers displace the MV heavily doped (HD) regions a greater distance from at least one sidewall of the MV gate to reduce the GIDL and impact ionization of the MV transistor.
    Type: Application
    Filed: January 9, 2017
    Publication date: July 13, 2017
    Inventors: Chia Ching YEO, Kiok Boone Elgin QUEK, Khee Yong LIM, Jae Han CHA, Yung Fu CHONG