Abstract: A method includes etching a semiconductor substrate to form a trench and a semiconductor strip. A sidewall of the semiconductor strip is exposed to the trench. The method further includes depositing a silicon-containing layer extending into the trench, wherein the silicon-containing layer extends on the sidewall of the semiconductor strip, filling the trench with a dielectric material, wherein the dielectric material is on a sidewall of the silicon-containing layer, and oxidizing the silicon-containing layer to form a liner. The liner comprises oxidized silicon. The liner and the dielectric material form parts of an isolation region. The isolation region is recessed, so that a portion of the semiconductor strip protrudes higher than a top surface of the isolation region and forms a semiconductor fin.

Abstract: A memory device and a programming method thereof are provided. The programming method includes the following steps. According to a step value, based on an incremental step pulse programming scheme, multiple programming operations are performed for a selected memory page. In a setting mode, multiple program verify operations are respectively performed corresponding to the programming operations to respectively generate multiple pass bit numbers. In the setting mode, a pass bit number difference value of two pass bit numbers corresponding to two programming operations is calculated. In the setting mode, an amount of the step value is adjusted according to the pass bit number difference value.

Abstract: A thermal conductive structure and an electronic device are provided. The thermal conductive structure includes a thermal conductive metal layer and a structural layer. The structural layer is disposed on the thermal conductive metal layer. The structural layer is a stacked structure formed by a graphene layer and a ceramic material layer, or the structural layer is a graphene-mixed ceramic material layer. The thermal conductive structure can quickly conduct the heat energy generated by the heat source to the outside, thereby improving the heat dissipation performance of the electronic device.

Abstract: A thermal conductive structure and an electronic device are provided. The thermal conductive structure includes a thermal conductive metal layer, a first carbon nanotube layer, a first thermal conductive adhesive layer, and a ceramic protective layer. The first carbon nanotube layer is disposed on a first surface of the thermal conductive metal layer and includes a plurality of first carbon nanotubes. The first thermal conductive adhesive layer is disposed at the first carbon nanotube layer, wherein the material of the first thermal conductive adhesive layer fills in the gaps of the first carbon nanotubes. The ceramic protective layer is disposed at one side of the first carbon nanotube layer away from the thermal conductive metal layer. The thermal conductive structure can quickly conduct the heat generated by the heat source to the outside, and improve the heat dissipation performance of the electronic device.

Abstract: Provided is a lithium battery anode material including a graphite material and a composite material. The composite material and the graphite material are crossly mixed together to form a plurality of spherical structures. The composite material includes a silicon material, an agglomerate, and a plurality of protrusions. A plurality of crystals are grown on a surface of the silicon material. The crystals include silicon carbide. The agglomerate includes metal silicide. The protrusions are distributed on a surface of the agglomerate. The protrusions include silicon and metal.

Abstract: Provided is a lithium battery anode material including a graphite material and a composite material. The composite material and the graphite material are crossly mixed together to form a plurality of spherical structures. The composite material includes a silicon material, an agglomerate, and a plurality of protrusions. A plurality of crystals are grown on a surface of the silicon material. The crystals include silicon carbide. The agglomerate includes metal silicide. The protrusions are distributed on a surface of the agglomerate. The protrusions include silicon and metal.

Abstract: A three-dimensional measure device with air bearings includes a base member having a platform horizontally securely thereon. A bridge is slidably mounted on the platform and moved along a first dimension. The bridge includes a first support and a second support respectively supporting a horizontal portion of the bridge. A runner is slidably mounted on the horizontal portion and moved along a second dimension. A tubular shaft is reciprocally and moved received in the runner and moved along a three dimension. A probe is longitudinally movably received in the tubular shaft. The air bearings are mounted between two adjacent elements that are moved relative to each other. Each air bearing has a resilient member mounted and previously compressed therein to provide an act force to the air bearing for adjusting a gap between the two adjacent elements that are moved relative to each other.

Abstract: A three-dimensional measure device with air bearings includes a base member having a platform horizontally securely thereon. A bridge is slidably mounted on the platform and moved along a first dimension. The bridge includes a first support and a second support respectively supporting a horizontal portion of the bridge. A runner is slidably mounted on the horizontal portion and moved along a second dimension. A tubular shaft is reciprocally and moved received in the runner and moved along a three dimension. A probe is longitudinally movably received in the tubular shaft. The air bearings are mounted between two adjacent elements that are moved relative to each other. Each air bearing has a resilient member mounted and previously compressed therein to provide an act force to the air bearing for adjusting a gap between the two adjacent elements that are moved relative to each other.