Abstract: An antenna device is provided. The antenna device includes an antenna layer, a first transparent layer, and a second transparent layer. The antenna layer is a metal mesh structure having a plurality of thru-holes, and the antenna layer includes at least one soldering region and an embedded region. The first transparent layer and the second transparent layer are respectively connected to two opposite sides of the antenna layer. The first transparent layer and the second transparent layer are connected to each other, so that the embedded region of the antenna layer is embedded in-between the first transparent layer and the second transparent layer. The second transparent layer has a hollow region corresponding in position to the at least one soldering region, so that the at least one soldering region is exposed from the hollow region.

Abstract: An antenna device is provided. The antenna device includes an antenna layer, a first transparent layer, and a second transparent layer. The antenna layer is a metal mesh structure having a plurality of thru-holes, and the antenna layer includes at least one soldering region and an embedded region. The first transparent layer and the second transparent layer are respectively connected to two opposite sides of the antenna layer. The first transparent layer and the second transparent layer are connected to each other, so that the embedded region of the antenna layer is embedded in-between the first transparent layer and the second transparent layer. The second transparent layer has a hollow region corresponding in position to the at least one soldering region, so that the at least one soldering region is exposed from the hollow region.

Abstract: A semiconductor package structure is disclosed. The package structure includes a first substrate, a second substrate on which the first substrate is disposed, and a semiconductor chip which is disposed on the first substrate. The two substrates can include two notches or two solder receiving portions. Therefore, when the package structure is disposed on the printed circuit board (PCB), the package structure will protrude less on the surface of the printed circuit board (PCB); or, the solders on the printed circuit board (PCB) will not be shifted by the package structure.

Abstract: The invention relates to a conductive paste comprising from 30 to 97% by weight of electrically conductive particles, from 0 to 20% by weight of a glass frit, from 3 to 70% by weight of an organic medium and from 0.1 to 67% by weight of a silicone oil, each based on the total mass of the paste, wherein the silicone oil has a boiling point or a boiling range in the range between 180° C. and 350° C. The invention further relates to a use of the conductive paste and a process for producing electrodes on a semiconductor substrate using the paste.

Abstract: A semiconductor package structure is disclosed. The package structure includes a first substrate, a second substrate on which the first substrate is disposed, and a semiconductor chip which is disposed on the first substrate. The two substrates can include two notches or two solder receiving portions. Therefore, when the package structure is disposed on the printed circuit board (PCB), the package structure will protrude less on the surface of the printed circuit board (PCB); or, the solders on the printed circuit board (PCB) will not be shifted by the package structure.

Abstract: The invention relates to a conductive paste comprising from 30 to 97% by weight of electrically conductive particles, from 0 to 20% by weight of a glass fit, from 3 to 70% by weight of an organic medium and from 0.1 to 67% by weight of a silicone oil, each based on the total mass of the paste, wherein the silicone oil hasa boiling pointor a boiling rangein the range between 180° C. and 350° C. The invention further relates to a use of the conductive paste and a process for producing electrodes on a semiconductor substrate using the paste.

Abstract: An antireflection structure is provided. The antireflection structure includes a substrate layer having a substrate refractive index; a first inorganic layer disposed on the substrate layer and having a first refractive index different from the substrate refractive index, where a thickness of the first inorganic layer is in a range of 1 to 40 nm; and a second inorganic layer disposed on the first inorganic layer and having a second refractive index different from the first refractive index.

Abstract: An antireflection structure is provided. The antireflection structure includes a substrate layer having a substrate refractive index; a first inorganic layer disposed on the substrate layer and having a first refractive index different from the substrate refractive index, where a thickness of the first inorganic layer is in a range of 1 to 40 nm; and a second inorganic layer disposed on the first inorganic layer and having a second refractive index different from the first refractive index.

Abstract: A reflective film is provided. The reflective film includes a substrate; a middle layer disposed on the substrate and mainly having a crystallized transition metal; and a metal layer disposed on the middle layer.

Abstract: A manufacturing method for a far-infrared irradiating substrate is provided. The manufacturing method comprises steps of providing a substrate, providing a far-infrared irradiating material and evaporating the far-infrared irradiating material to form a thin film onto the substrate. The far-infrared irradiating substrate provided by the present invention not only has a high emission coefficient of far-infrared ray, but also do not cause a potential exposure of an ionizing radiation.

Abstract: A manufacturing method for a far-infrared (FIR) substrate is provided. The manufacturing method includes steps of providing a substrate and sputtering a FIR emission material onto at least one surface of the substrate to form a thin film.

Abstract: The in-situ micro-spectro-sensor determines whether a leakage occurs during the plasma process by taking the advantage of detecting the target leak in gas specifically composed of 99% of nitrogen and oxygen which are four to one in ratio. Warning signals with light and sound are available. The main part is compact, small and set up is quite convenient. Non-invasive in-situ detection has no effect on in-line process, but can indeed breakthrough the in-situ leak detection barrier for plasma-based process facilities of high-tech industries such as semiconductors and opto-electronics.