Abstract: An embodiment of an integrated circuit chip includes a combination processing core and magnetoresistive random access memory (MRAM) circuitry integrated into the chip. The MRAM circuitry includes a plurality of MRAM cells. The MRAM cells are organized into a number of memories, including a cache memory, a main or working memory and an optional secondary storage memory. The cache memory includes multiple cache levels.

Abstract: A patient interface including a positioning and stabilizing structure that is configured to maintain a first seal-forming structure and a second seal-forming structure in a therapeutically effective position. The positioning and stabilizing structure comprises a frame coupled to the plenum chamber. The frame includes a central portion coupled to the plenum chamber outside of the cavity. The frame also includes a pair of arms that extend away from the central portion in a posterior direction past the second seal-forming structure. The pair of arms are more flexible than the central portion. The positioning and stabilizing structure also includes headgear straps coupled to the frame, which configured to provide a tensile force to the first seal-forming structure and to the second seal-forming structure into the patient's face via the frame.

Abstract: A patient interface including a vent structure that allows a continuous flow of gases exhaled by the patient from an interior of a nasal plenum chamber to the ambient. The vent structure is sized and shaped to maintain the therapeutic pressure in the nasal plenum chamber in use. The vent structure includes a housing secured to the nasal plenum chamber, and a vent wall coupled to the rigid housing and selectively movable between a closed position and an open position. The vent wall is biased toward the closed position. The vent wall is maintained in the closed position and is configured to be positioned in the open position as a result of contact with an oral cushion in order to accommodate the oral cushion with an oral plenum chamber and form an oro-nasal cushion.

Abstract: A semiconductor structure includes a substrate, at least one first gate structure, at least one first spacer, at least one source drain structure, at least one conductor, and at least one protection layer. The first gate structure is present on the substrate. The first spacer is present on at least one sidewall of the first gate structure. The source drain structure is present adjacent to the first spacer. The conductor is electrically connected to the source drain structure. The protection layer is present between the conductor and the first spacer and on a top surface of the first gate structure.

Abstract: A patient interface including a positioning and stabilizing structure that is configured to maintain a first seal-forming structure and a second seal-forming structure in a therapeutically effective position. The positioning and stabilizing structure comprises a frame coupled to the plenum chamber. The frame includes a central portion coupled to the plenum chamber outside of the cavity. The frame also includes a pair of arms that extend away from the central portion in a posterior direction past the second seal-forming structure. The pair of arms are more flexible than the central portion. The positioning and stabilizing structure also includes headgear straps coupled to the frame, which configured to provide a tensile force to the first seal-forming structure and to the second seal-forming structure into the patient's face via the frame.

Abstract: A semiconductor structure includes a substrate, at least one first gate structure, at least one first spacer, at least one source drain structure, at least one conductor, and at least one protection layer. The first gate structure is present on the substrate. The first spacer is present on at least one sidewall of the first gate structure. The source drain structure is present adjacent to the first spacer. The conductor is electrically connected to the source drain structure. The protection layer is present between the conductor and the first spacer and on a top surface of the first gate structure.

Abstract: A synthetic polymer filament is characterized by a four-sided void that extends centrally and axially through the filament. Each apex of the void extends toward the approximate midpoint of one side of the exterior configuration of the filament. The four-sided void has a modification ratio in the range from about 1.2 to about 2.0 and occupies from about five percent 5% to about thirty percent 30% of the cross sectional area of the filament. A spinneret plate for producing the thermoplastic synthetic polymer filament has a cluster of four orifices centered about a central point. Each orifice includes a generally isosceles triangle-shaped major portion from which extends a pair of legs, each leg of one orifice being spaced from the leg of an adjacent orifice to define a gap therebetween.

Abstract: A synthetic polymer filament is characterized by a four-sided void that extends centrally and axially through the filament. Each apex of the void extends toward the approximate midpoint of one side of the exterior configuration of the filament. The four-sided void has a modification ratio in the range from about 1.2 to about 2.0 and occupies from about five percent 5% to about thirty percent 30% of the cross sectional area of the filament.

Abstract: A synthetic polymer filament is characterized by a trilobal void that extends centrally and axially through the filament. Each apex of the void extends toward the approximate midpoint of one side of the exterior configuration of the filament. The trilobal void has a modification ratio in the range from about 1.4 to about 3.0 and occupies from about five percent (5%) to about thirty percent (30%) of the cross sectional area of the filament. At a given constant void percentage a decrease of modification ratio increases the degree of sparkle.A spinneret plate for producing the thermoplastic synthetic polymer filament has a cluster of three generally arrow-shaped orifices centered about a central point. Each orifice is defined by a first and a second outer leg joined together at a pointed end directed away from a central point of the cluster. Each orifice has a central leg extending from the jointure of the outer legs toward the central point of the cluster.

Abstract: Alternate-twist plied yarns, wherein a secondary strand for providing a special effect is plied with at least two alternately, false-twisted primary strands, are made by converging the secondary strand with the primary strands downstream of the point at which the primary strands are converged. The nodes at the twist reversal points for the secondary strand are displaced with respect to nodes of the primary strands. Improved effectiveness from the secondary strand in the plied yarn, such as better antistatic performance, can be realized. Where a node of a secondary strand overlaps a node of the primary strands, whether or not the node centers are displaced, a preferred configuration is one wherein the secondary strand forms a node by wrapping around only one of the primary strands in a portion of the primary node.