Abstract: A distance-measuring device includes a light-emitting/sensing controlling circuit, a light-emitting component, a light-sensing group, a background-calculating circuit, a frequency-adjusting circuit, and a distance-calculating circuit. The light-emitting component emits a detecting light to a measured object. The light-emitting/sensing controlling circuit controls the light-sensing group receiving and accumulating the energy of a reflective light generated by the measured object reflecting the detecting light, so that the distance-calculating circuit can calculate a measured distance between the measured object and the distance-measuring device according the accumulated energy of the light-sensing group. In addition, the distance-measuring device calculates the energy accumulated by the light-sensing group sensing the background light per unit time, by means of the background-calculating circuit.

Abstract: A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.

Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.

Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.

Abstract: The present invention provides an ultra-violet light sensing device. The ultra-violet light sensing device includes a first conductivity type substrate, a second conductivity type region, and a first conductivity type high density region. The first conductivity type substrate includes a light incident surface. The second conductivity type region is disposed in the first conductivity type substrate and adjacent to the light incident surface. The first conductivity type high density region is disposed under the second conductivity type region. The present invention also provides another ultra-violet light sensing device, which further includes a first conductivity type high density shallow region which is sandwiched between the light incident surface and the second conductivity type region. Manufacturing methods for these ultra-violet light sensing devices are also disclosed in the present invention.

Abstract: Provided is an image sensor device. The image sensor device includes a device substrate having a front side and a back side. The device substrate has a radiation-sensing region that can sense radiation that has a corresponding wavelength. The image sensor also includes a first layer formed over the front side of the device substrate. The first layer has a first refractive index and a first thickness that is a function of the first refractive index. The image sensor also has a second layer formed over the first layer. The second layer is different from the first layer and has a second refractive index and a second thickness that is a function of the second refractive index.

Abstract: A calibration method for a driving current of a light source adapted to sequentially calibrate at least an optical navigation device, each including a light sensing device, a memory unit and a driving unit. The driving unit is electrically connected to the memory unit and a light source configured to receive a reflection light. The calibration method includes steps of: driving the light source to provide a beam through configuring the driving unit to supply a first driving current to the light source; configuring the light sensing device to generate a sensed light value; obtaining a second driving current through modulating the value of the first driving current according to the sensed light value; and recording the value of the second driving current in the memory unit and driving the light source to provide the beam according to the second driving current. A light sensing module is also provided.

Abstract: A method includes forming a protective layer with an opening over a substrate, thereafter implanting a dopant into a substrate region through the opening, the protective layer protecting a different substrate region, and reducing thickness of the protective layer. A different aspect includes etching a substrate to form a recess therein, thereafter implanting a dopant into a substrate region within the recess and through an opening in a protective layer provided over the substrate, and reducing thickness of the protective layer. Another aspect includes forming a protective layer over a substrate, forming photoresist having an opening over the protective layer, etching the protective layer through the opening to expose the substrate, etching the substrate to form a recess in the substrate, implanting a dopant into a substrate portion, the protective layer protecting a different substrate portion thereunder, and etching the protective layer to reduce its thickness.

Abstract: A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.

Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.

Abstract: An image-capturing device configured for an optical pointing apparatus includes a plurality of image-sensing units arranged adjacently. The plurality of image-sensing units are configured to sense images of a surface and generate sensing signals that are used for evaluating the velocity of the optical pointing apparatus. The image-capturing device is configured to use different image-sensing units arranged differently to sense the surface according to the velocity of the optical pointing apparatus. When the optical pointing apparatus moves at a first velocity, the image-capturing device uses the image-sensing units configured to occupy a smaller area to sense the surface. When the optical pointing apparatus moves at a second velocity, the image-capturing device uses the image-sensing units configured to occupy a larger area to sense the surface. The first velocity is lower than the second velocity.

Abstract: The present invention discloses an optical displacement detection apparatus and an optical displacement detection method. The optical displacement detection apparatus comprises: at least two light sources for projecting light of different spectrums to a surface under detection, respectively; an image capturing device for receiving light reflected from the surface under detection and converting it into electronic signals; and a processing control circuit for calculating displacement according to the electronic signals from the image capturing device, wherein the processing control circuit is capable of switching between the light sources.

Abstract: A correlation double sampling (CDS) circuit for sampling a reset signal and a light-sensing signal outputted from a pixel column of an image sensor includes two sampling capacitors and four transistor switches. The operation of the CDS circuit needs not change polarities of the two sampling capacitors, such that MOS capacitors that have higher capacitance per unit area can be utilized for realizing the two sampling capacitors for reducing thermal noises induced when performing sampling. Additionally, fewer transistors are used in the CDS circuit, and thus charge injection noises caused by switching the transistor switches can also be reduced.

Abstract: A distance-measuring device includes a light-emitting/sensing controlling circuit, a light-emitting component, a light-sensing group, a background-calculating circuit, a frequency-adjusting circuit, and a distance-calculating circuit. The light-emitting component emits a detecting light to a measured object. The light-emitting/sensing controlling circuit controls the light-sensing group receiving and accumulating the energy of a reflective light generated by the measured object reflecting the detecting light, so that the distance-calculating circuit can calculate a measured distance between the measured object and the distance-measuring device according the accumulated energy of the light-sensing group. In addition, the distance-measuring device calculates the energy accumulated by the light-sensing group sensing the background light per unit time, by means of the background-calculating circuit.

Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.

Abstract: Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

Abstract: A method includes forming a protective layer with an opening over a substrate, thereafter implanting a dopant into a substrate region through the opening, the protective layer protecting a different substrate region, and reducing thickness of the protective layer. A different aspect includes etching a substrate to form a recess therein, thereafter implanting a dopant into a substrate region within the recess and through an opening in a protective layer provided over the substrate, and reducing thickness of the protective layer. Another aspect includes forming a protective layer over a substrate, forming photoresist having an opening over the protective layer, etching the protective layer through the opening to expose the substrate, etching the substrate to form a recess in the substrate, implanting a dopant into a substrate portion, the protective layer protecting a different substrate portion thereunder, and etching the protective layer to reduce its thickness.

Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.

Abstract: Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

Abstract: Provided is an image sensor device. The image sensor device includes a device substrate having a front side and a back side. The device substrate has a radiation-sensing region that can sense radiation that has a corresponding wavelength. The image sensor also includes a first layer formed over the front side of the device substrate. The first layer has a first refractive index and a first thickness that is a function of the first refractive index. The image sensor also has a second layer formed over the first layer. The second layer is different from the first layer and has a second refractive index and a second thickness that is a function of the second refractive index.