Abstract: A method for making a semiconductor structure includes: providing a substrate with a contact feature thereon; forming a dielectric layer on the substrate; etching the dielectric layer to form an interconnect opening exposing the contact feature; forming a metal layer on the dielectric layer and outside of the contact feature; and forming a graphene conductive structure on the metal layer, the graphene conductive structure filling the interconnect opening, being electrically connected to the contact feature, and having at least one graphene layer that extends in a direction substantially perpendicular to the substrate.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating hypertrophic scars. The present inventors have found that the inhibition of expression of TXNDC5, PRRC1, S100A11, Galectin 1, Filamin A, eIF-5A, Annexin A2, and FABP5 can be a new target for improving and treating hypertrophic scars. In the present invention, TXNDC5-, PRRC1-, S100A11-, Galectin 1-, Filamin A-, eIF-5A-, Annexin A2-, and FABP5-specific siRNAs were constructed to determine the probability of treating the hypertrophic scars. As a result, the knockdown of the protein or a gene encoding the protein induces apoptosis in the hypertrophic scars and reduces collagen expression, which can be very useful in treating wounds.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

Abstract: The present invention discloses a respiratory mask to connect a user and a breathing tube for receiving a first gas and releasing a second gas, so as to provide an user's respiratory system to exchange gas. It comprises a main part, an air chamber exchange part, an insert and a clamping part. The main part provides a first, second, and third openings that are communicated each other. The first opening connects to the breathing tube to receive the first gas from the breathing tube. The air chamber exchange part provides an exhaust assembly to relieve pressure according to an internal air pressure of the air chamber exchange part. The insert connects to the user's nose so as to direct the first gas to the user or direct the second gas from the user to the air chamber exchange part. The clamping part connects to the user's mouth.

Abstract: A method includes forming a fin structure over a substrate, wherein the fin structure comprises first semiconductor layers and second semiconductor layers alternately stacked over a substrate; forming a dummy gate structure over the fin structure; removing a portion of the fin structure uncovered by the dummy gate structure; performing a selective etching process to laterally recess the first semiconductor layers, including injecting a hydrogen-containing gas from a first gas source of a processing tool to the first semiconductor layers and the second semiconductor layers; and injecting an F2 gas from a second gas source of the processing tool to the first semiconductor layers and the second semiconductor layers; forming inner spacers on opposite end surfaces of the laterally recessed first semiconductor layers of the fin structure; and replacing the dummy gate structure and the first semiconductor layers with a metal gate structure.

Abstract: A method for treating wastewater containing ertriazole compounds is provided. Hypochlorous acid (HOCl) having a neutral to slightly acidic pH value is added to the wastewater containing triazole compounds for reaction, thereby effectively reacting more than 90% of triazole compounds.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: A system including a processor configured to perform generating a plurality of different layout blocks; selecting, among the plurality of layout blocks, layout blocks corresponding to a plurality of blocks in a floorplan of a circuit; combining the selected layout blocks in accordance with the floorplan into a layout of the circuit; and storing the layout of the circuit in a cell library or using the layout of the circuit to generate a layout for an integrated circuit (IC) containing the circuit. Each of the plurality of layout blocks satisfies predetermined design rules and includes at least one of a plurality of different first block options associated with a first layout feature, and at least one of a plurality of different second block options associated with a second layout feature different from the first layout feature.

Abstract: A handheld electronic device is provided. The handheld electronic device includes a screen, a back cover, a frame, a main board, and a heat conduction structure. The frame is arranged between the screen and the back cover. The frame and the back cover define a space. The main board is arranged in the space, and includes a front surface and a back surface. The front surface faces the screen and includes a heat source. The heat conduction structure extends from the front surface to the back surface, and includes a first end and a second end opposite to each other. The first end is arranged at the heat source, and the second end extends to the back cover.

Abstract: The disclosure provides a portable electronic device, including: a housing, a heat dissipation component, a bracket, a cover structure, and a plurality of pivotal linkage rods. The housing includes a heat dissipation opening. The heat dissipation component is disposed in the housing and corresponds to the heat dissipation opening. The bracket is disposed in the housing and encloses the heat dissipation component. The cover structure is configured to move between a close position covering the heat dissipation opening and an open position exposing the heat dissipation opening. Each of the plurality of pivotal linkage rods is pivotally connected between the bracket and the cover structure, and is configured to be driven to rotate, to drive the cover structure to move between the close position and the open position.

Abstract: A functional module is provided. The functional module is applied to an electronic device, and includes a housing, a functional member, and a motor assembly. Both the functional member and the motor assembly are disposed in the housing. The motor assembly includes a motor and an output shaft. The motor is configured to drive the output shaft to rotate. The output shaft protrudes from one side of the housing.

Abstract: Disclosed is a microfluidic detection device including a circuit substrate and a transparent substrate. The circuit substrate is provided with at least one first light-emitting device used to emit a detection beam, a photodetector used to receive the detection beam and send out a sensing signal, and a control circuit electrically connected to the first light-emitting device and the photodetector. The transparent substrate overlaps the circuit substrate and is provided with a microfluidic channel and a light guide structure. The light guide structure has a light incident surface disposed corresponding to the first light-emitting device and a light exiting surface disposed corresponding to the photodetector. The light guide structure extends from each of the light incident surface and the light exiting surface to the microfluidic channel and is adapted to transmit the detection beam into and out of the microfluidic channel.

Abstract: The present disclosure relates to the technical field of semiconductor manufacturing, and in particular to an LED chip and a preparation method thereof, including: a substrate, an epitaxial layer, a current blocking layer, a current spreading layer, a first P-type electrode, a first N-type electrode, a first insulation layer, a second P-type electrode, a second N-type electrode, a second insulation layer, a third P-type electrode, a third N-type electrode, a P-type pad and a N-type pad. As for the LED chip, the electrode design of the flip chip is improved and a third N-type electrode and a third P-type electrode are added. The third N-type electrode and the P-type pad have no overlap spatially, similarly, the third P-type electrode and the N-type pad have no overlap spatially.

Abstract: An integrated structure of semiconductor devices having a shared contact plug includes: a first device, a second device and a shared contact plug. The first device includes a first gate having a conduction region, two spacer regions and a protection region. The two spacer regions overlay and are connected with two ends of the conductive region, respectively. The protection region overlays and is connected with the spacer region located outside a shared side of the conductive region. The second device includes a shared region, wherein the shared region is located in a semiconductor layer which is located below and outside the protection region. The shared contact plug is formed on and in contact with the conductive region and the shared region. The first gate is electrically connected with the shared region through the shared contact plug, wherein the shared contact plug overlays and is connected with the protection region.

Abstract: A device for the rapid and convenient mounting of an electronic product on a supporting rack includes a holding rack, an engaging element, and a lock mechanism. A holding plate of the holding rack engages a first edge of the supporting rack, and holds the electronic product. An extension plate with first position and second position holes is connected to the holding plate, and the engaging element can pivot on the holding plate. The lock mechanism disposed on the engaging element can be selectively inserted into the first position hole and the second position hole. When the electronic product is mounted on the supporting rack, the lock mechanism is inserted into the first position hole, the holding plate is engaged with the first edge, and the engaging element is engaged to a second edge of the supporting rack.

Abstract: A light sensor and a control method thereof are revealed. The light sensor comprises a first light-emitting element, a second light-emitting element and a light-sensing element. The first light-emitting element is used to generate a first emitting signal. The first emitting signal has an optical wavelength within a first wavelength range. The second light-emitting element is used to generate a second emitting signal. The wavelength of the second emitting signal has an optical wavelength within a second wavelength range. The first wavelength range is different from the second wavelength range. Thereby, a control circuit sequentially controls the first light-emitting element and the second light emitting-element to emit the first emitting signal and the second emitting signal.

Abstract: A high voltage device having multi-field plates, includes: a semiconductor layer; a well; a body region; a source and a drain; a gate; a resist protection oxide region, formed on a top surface of the semiconductor layer, in connection with the top surface, and located above a drift region and in connection with the drift region; and plural field plates formed above the resist protection oxide region, wherein the plural field plates are arranged in parallel with the gate along a width direction and the plural field plates are not directly connected with one another and are arranged in parallel with one another, wherein the field plates are located above the resist protection oxide region in a vertical direction.

Abstract: A hydrogen storage system for detecting and restricting a pressure difference generated in the hydrogen storage system and a method for adjusting differential pressure therein are provided. The hydrogen storage system includes a controller that controls valves of a plurality of tanks. The controller measures pressure for each tank, measures a pipe pressure of pipe connected with the plurality of tanks, compares the pressure for each tank with the pipe pressure to determine whether differential pressure between the tank and the pipe is generated, determines whether it is expected to generate differential pressure between the tanks in an expected equilibrium temperature, when it is determined that the differential pressure between the tank and the pipe is not generated, and performs pressure equilibrium control between the tanks, when it is expected to generate the differential pressure between the tanks.

Abstract: This document relates to methods and materials for treating T cell cancers. For example, a composition containing one or more bispecific molecules can be administered to a mammal having a T cell cancer to treat the mammal. For example, methods and materials for using one or more bispecific molecules to treat a mammal having a T cell cancer are provided.

Abstract: A high electron mobility transistor includes: a substrate; a first gallium nitride (GaN) layer, which is formed on the substrate; a first aluminum gallium nitride (AlGaN) layer, which is formed on and in contact with the first GaN layer, wherein the first AlGaN layer has a trench; two insulation sidewalls, which are in contact with and completely overlay two inner sidewalls of the trench, respectively; a P-type GaN layer, which is formed on and in contact with the first AlGaN layer, wherein a part of the P-type GaN layer fills into the trench; a gate, which is formed on and in contact with the P-type GaN layer, and is configured to receive a gate voltage, for turning ON or OFF the enhancement HEMT; and a source and a drain, which are located outside two sides of the gate, respectively.