Abstract: The present disclosure relates to the technical field of semiconductor manufacturing, and in particular to an LED chip and a preparation method thereof, including: a substrate, an epitaxial layer, a current blocking layer, a current spreading layer, a first P-type electrode, a first N-type electrode, a first insulation layer, a second P-type electrode, a second N-type electrode, a second insulation layer, a third P-type electrode, a third N-type electrode, a P-type pad and a N-type pad. As for the LED chip, the electrode design of the flip chip is improved and a third N-type electrode and a third P-type electrode are added. The third N-type electrode and the P-type pad have no overlap spatially, similarly, the third P-type electrode and the N-type pad have no overlap spatially.

Abstract: The present disclosure relates to the field of semiconductor technology, in particular to an LED chip and a preparation method thereof. The LED chip comprises a substrate, an epitaxial layer, a current blocking layer, a current spreading layer, a first electrode layer, a first insulating layer, a second electrode layer, a second insulating layer, a support layer, a third electrode layer and a third insulating layer.