Abstract: An optical device comprises a light source, an intensity control element (adjustable between an on-state and an off-state), an optical channel, and an optical component. The light source supplies an optical pulse to the intensity control element, which modulates an intensity of the received pulse and to provides the modulated pulse to the channel. The intensity of the modulated pulse is higher when the intensity control element is in the on-state than in the off-state. The optical component receives the modulated pulse from the channel. The optical intensity modulator is configured such that at least a portion of the pulse is modulated in the on-state, the leading edge of said portion exits the intensity modulator at a first time, and the intensity modulator is in the off-state at a second time which is twice the propagation time measured from to the first time.

Abstract: Provided is a sensor and method for weld defect detection. The sensor includes several piezoelectric elements which form a matrix arranged on a flexible substrate. Each piezoelectric element is covered with a damping block and surrounded by sound absorbing material, within a flexible protective film. The sensor is simple, highly adaptable and high detection efficiency, which is especially suitable for the quick in-service inspection of long distance welds in large equipment, it has high degree of automation.

Abstract: A method for detecting and recognizing objects in images includes obtaining a video stream and pre-processing the video stream to obtain an image queue arranged in a frame playing order and storing the image queue into a storage device. An image frame of the image queue from the storage device is read and at least one object in the image frame is detected and recognized. An image recognition device is also provided.

Abstract: Provided is a sensor and method for weld defect detection. The sensor includes several piezoelectric elements which form a matrix arranged on a flexible substrate. Each piezoelectric element is covered with a damping block and surrounded by sound absorbing material, and packaged within a flexible protective film. The sensor is simple, highly adaptable and high detection efficiency, which is especially suitable for the quick in-service inspection of long distance welds in large equipment, it has high degree of automation.

Abstract: A semiconductor structure for improving the thermal stability and Schottky behavior by engineering the stress in a III-nitride semiconductor, comprising a III-nitride semiconductor and a gate metal layer. The III-nitride semiconductor has a top surface on which a conductive area and a non-conductive area are defined. The gate metal layer is formed directly on the top surface of the III-nitride semiconductor and comprises a gate connection line and at least one gate contact extending from the gate connection line in a second direction perpendicular to the length of the gate connection line. The at least one gate contact forms a Schottky contact with the III-nitride semiconductor on the conductive area, and the gate connection line is in direct contact with the III-nitride semiconductor on the non-conductive area. The non-conductive area of the III-nitride semiconductor is at least partially covered by the gate connection line.

Abstract: A method for detecting and recognizing objects in images includes obtaining a video stream and pre-processing the video stream to obtain an image queue arranged in a frame playing order and storing the image queue into a storage device. An image frame of the image queue from the storage device is read and at least one object in the image frame is detected and recognized. An image recognition device is also provided.

Abstract: A semiconductor structure for improving the thermal stability and Schottky behavior by engineering the stress in a III-nitride semiconductor, comprising a III-nitride semiconductor and a gate metal layer. The III-nitride semiconductor has a top surface on which a conductive area and a non-conductive area are defined. The gate metal layer is formed directly on the top surface of the III-nitride semiconductor and comprises a gate connection line and at least one gate contact extending from the gate connection line in a second direction perpendicular to the length of the gate connection line. The at least one gate contact forms a Schottky contact with the III-nitride semiconductor on the conductive area, and the gate connection line is in direct contact with the III-nitride semiconductor on the non-conductive area. The non-conductive area of the III-nitride semiconductor is at least partially covered by the gate connection line.

Abstract: A semiconductor structure for improving the gate metal adhesion and the Schottky stability, comprising: a III-nitride semiconductor having a top surface on which a conductive area and a non-conductive area are defined; a source contact metal and a first drain contact metal forming ohmic contact with the III-nitride semiconductor on the conductive area, and the first drain contact metal provided at one side of the source contact metal; and a gate metal layer comprising a gate connection line and a first gate finger extending from the gate connection line, the first gate finger interposing between the source contact metal and the first drain contact metal and forming a Schottky contact with the III-nitride semiconductor on the conductive area, wherein the first gate finger has a first terminal anchor at an end thereof surrounding the source contact metal, and the first terminal anchor has an increased width.

Abstract: A method to produce high electron mobility transistors with Boron implanted isolation comprises the following steps: on a substrate forming in sequence a nucleation layer, a buffer layer, a barrier layer and a cap layer; coating a photoresist layer on the cap layer; photomasking and by exposure eliminating the photoresist layer of at least one isolation region; executing plural times an ion implantation process including: adjusting an incident angle of a Boron ion beam with respect to the substrate, and implanting the Boron ion beam into the cap layer, the barrier layer, the buffer layer, the nucleation layer and the substrate within the at least one isolation region so as to form an isolation structure while rotating the substrate by a rotation angle; eliminating the rest of the photoresist layer by exposure; and forming a source, a drain and a gate on the cap layer.

Abstract: A stone/mount combination being mountable to a wall. The stone/mount combination consists of a stone and two mounts. The stone has two parallel edges in each of which a slit is defined. Each mount has a body, a number of fine perpendicularly extending from an edge of the body and a flange perpendicularly extending from an opposite edge of the body. The flange formed on each mount is secured, by means of an adhesive material, in a corresponding slit defined in the stone. Each fin defines a number of apertures. A plurality of screws are inserted through the apertures. A plurality of screws are inserted through the apertures defined through the fins and are further secured to the wall.