Abstract: A semiconductor chip may include a plurality of pads arranged in at least a first and a second row, and a plurality of protection circuits connected to the plurality of pads. The plurality of protection circuits may include at least one diode. A first protection circuit may be connected to a first pad in the first row of pads, and a second protection circuit may be connected to a second pad in the second row of pads. The first and second protection circuits may be arranged under the first row of pads.

Abstract: The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions isolated from a drain region. A source region in close proximity to the drain region is a first diffusion structure in which a heavily doped diffusion layer of a second conductivity type is formed in a body region of a second conductivity type. Another source region is a second diffusion structure in which a heavily doped diffusion layer of a first conductivity type and a heavily doped diffusion layer of the second conductivity type are formed in the body region of the second conductivity type. An impurity diffusion structure of the source region in close proximity to the drain region is changed to be operated as a diode, thereby forming a strong current path to ESD (Electro-Static Discharge) or EOS (Electrical Over Stress). As a result, it is possible to prevent the device from being broken down.

Abstract: There is provided an integrated circuit device having an input/output electrostatic discharge (I/O ESD) protection cell. The integrated circuit device includes an I/O ESD protection cell comprising a VDD ESD protection element connected between an I/O pad and a VDD line, a ground voltage (VSS) ESD protection element connected between the I/O pad and a VSS line, and a power clamp element connected between the VDD line and the VSS line, and wherein the VDD ESD protection element, the power clamp element, and the VSS ESD protection element in the I/O ESD protection cell are adjacent to each other so they can be connected in a straight line or are arranged to partially overlap.

Abstract: There is provided an integrated circuit device having an input/output electrostatic discharge (I/O ESD) protection cell. The integrated circuit device includes an I/O ESD protection cell comprising a VDD ESD protection element connected between an I/O pad and a VDD line, a ground voltage (VSS) ESD protection element connected between the I/O pad and a VSS line, and a power clamp element connected between the VDD line and the VSS line, and wherein the VDD ESD protection element, the power clamp element, and the VSS ESD protection element in the I/O ESD protection cell are adjacent to each other so they can be connected in a straight line or are arranged to partially overlap.

Abstract: A semiconductor chip may include a plurality of pads arranged in at least a first and a second row, and a plurality of protection circuits connected to the plurality of pads. The plurality of protection circuits may include at least one diode. A first protection circuit may be connected to a first pad in the first row of pads, and a second protection circuit may be connected to a second pad in the second row of pads. The first and second protection circuits may be arranged under the first row of pads.

Abstract: A clamping circuit is provided, which may clamp a voltage at a node of a circuit to a stable level by using a transistor already included in the circuit. The clamping circuit may clamp a voltage at a first node of a circuit inside a semiconductor chip to a more stable level when electro-static discharge (ESD) occurs. The clamping circuit may include a transistor and a capacitive element to store a control voltage to turn on the transistor in response to ESD.

Abstract: An apparatus for assembling a crankshaft-sprocket aligns a timing mark of a sprocket to a predetermined line of a crankshaft, and includes a slider for slidably moving an interior circumference surface of the sprocket to an exterior circumference surface of the crankshaft. A guider is disposed on an end portion of the crankshaft so as to guide the slider to the crankshaft. A first aligner is disposed on the slider so as to align the timing mark of the sprocket to a predetermined portion of the slider. A second aligner aligns the slider such that the timing mark aligned by the first aligner is positioned to the predetermined line of the crankshaft.

Abstract: An electrostatic discharge circuit between a first pad and a second pad including an electrostatic discharge circuit element, including a bipolar transistor path and a resistor path, the electrostatic discharge circuit element alternately discharging an electrostatic current through the bipolar transistor path and the resistor path.

Abstract: The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions isolated from a drain region. A source region in close proximity to the drain region is a first diffusion structure in which a heavily doped diffusion layer of a second conductivity type is formed in a body region of a second conductivity type. Another source region is a second diffusion structure in which a heavily doped diffusion layer of a first conductivity type and a heavily doped diffusion layer of the second conductivity type are formed in the body region of the second conductivity type. An impurity diffusion structure of the source region in close proximity to the drain region is changed to be operated as a diode, thereby forming a strong current path to ESD (Electro-Static Discharge) or EOS (Electrical Over Stress). As a result, it is possible to prevent the device from being broken down.

Abstract: A dental implant includes a fixture and an abutment in a body, and a head for a compaction drill is configured for implanting such an implant. The implant includes an upper abutment portion on which a denture is fixed, a fixture portion implanted in the jawbone and forming single or double threads, and a settling portion formed between the abutment portion and the fixture portion. The invention improves the stability of the implant, improves stabilization of the bone tissue affixed to the implant, effectively seals the socket from its surroundings and facilitates bonding between implant and jawbone. This is achieved because of the early healing of tissue around the implant and the greater surface area in contact with surrounding tissue. As a result, an artificial crown may be coupled with the implant during the same surgery.

Abstract: A dental implant includes a fixture and an abutment in a body, and a head for a compaction drill is configured for implanting such an implant. The implant includes an upper abutment portion on which a denture is fixed, a fixture portion implanted in the jawbone and forming single or double threads, and a settling portion formed between the abutment portion and the fixture portion. The invention improves the stability of the implant, improves stabilization of the bone tissue affixed to the implant, effectively seals the socket from its surroundings and facilitates bonding between implant and jawbone. This is achieved because of the early healing of tissue around the implant and the greater surface area in contact with surrounding tissue. As a result, an artificial crown may be coupled with the implant during the same surgery.

Abstract: There is provided an integrated circuit device having an input/output electrostatic discharge (I/O ESD) protection cell. The integrated circuit device includes an I/O ESD protection cell comprising a VDD ESD protection element connected between an I/O pad and a VDD line, a ground voltage (VSS) ESD protection element connected between the I/O pad and a VSS line, and a power clamp element connected between the VDD line and the VSS line, and wherein the VDD ESD protection element, the power clamp element, and the VSS ESD protection element in the I/O ESD protection cell are adjacent to each other so they can be connected in a straight line or are arranged to partially overlap.

Abstract: A dental implant, which includes a fixture and an abutment in a body, and the head for a compaction drill for implanting an implant are provided. The implant comprises an upper abutment portion on which a denture is fixed, a fixture portion implanted in the jawbone and forming single or double threads and a settling portion formed between the abutment portion and the fixture portion. The invention improves the stability of the implant exceedingly, improves stabilization of the bone tissue affixed to the implant, effectively seals the socket from its surroundings, and facilitates bonding between implant and jawbone. This is achieved because of the early healing of tissue around the implant and the greater surface area in contact with surrounding tissue. As a result, an artificial crown may be coupled with the implant during the same surgery.