Abstract: Provided are an organic light emitting diode (OLED) using phase separation and a method of fabricating the same. The method includes preparing a transparent substrate. A first light path control layer is formed on the transparent substrate. The first light path control layer includes a mixture of a first medium and a second medium having a lower refractive index than the first medium using the phase separation. An anode, an organic emission layer, and a cathode are sequentially stacked on the first light path control layer. In this method, an OLED with improved light extraction efficiency can be fabricated using a simple and inexpensive process.

Abstract: A fuse circuit may include a fuse cut detection unit to output state information indicating whether or not a fuse is cut during a fuse cut detection time period, a maintenance and output unit to maintain the state information and output a fuse state information signal, and a connection/disconnection unit to connect the fuse cut detection unit to the maintenance and output unit during the fuse cut detection time period and disconnect the fuse cut detection unit from the maintenance and output unit after the fuse cut detection time period. A fuse circuit may recognize an indefinite voltage at a detection node caused by a leakage path through a fuse as a predetermined fuse state.

Abstract: The present invention relates to a hydrogenation catalyst represented by the following formula 1, a method for the preparation thereof, and a method for preparing gamma-butyrolactone using this catalyst. The method for preparing gamma-butyrolactone from maleic anhydride using the catalyst of the invention prepared by stabilizing the precursor particles of copper oxide, zinc oxide, and manganese oxide with a silica exhibits high selectivity, high yield, and high productivity under the operation conditions of a low molar ratio of hydrogen with regard to the reactants, and enables the preparation of gamma-butyrolactone from maleic anhydride with long-term stability without requiring frequent re-activation of the catalyst: Formula (I) CuO(a)ZnO(b)MnO2(c)SiO2(d) wherein a, b, c, and d are represented on the basis of weight, wherein a is 20 to 90, b is 0.01 to 10, c is 0.01 to 5, and d is 5 to 50.

Abstract: A fuse circuit may include a fuse cut detection unit to output state information indicating whether or not a fuse is cut during a fuse cut detection time period, a maintenance and output unit to maintain the state information and output a fuse state information signal, and a connection/disconnection unit to connect the fuse cut detection unit to the maintenance and output unit during the fuse cut detection time period and disconnect the fuse cut detection unit from the maintenance and output unit after the fuse cut detection time period. A fuse circuit may recognize an indefinite voltage at a detection node caused by a leakage path through a fuse as a predetermined fuse state.

Abstract: A dynamic semiconductor memory device includes a memory cell array including a plurality of memory cells connected between a plurality of word lines and a plurality of bit line pairs. A mode setting portion receives a mode setting code applied from an external portion to generate a power saving mode control signal for a power saving mode of operation responsive to a mode setting command. An address control portion decodes an address applied from an external portion or a refresh address to select one of the plurality of the word lines during a normal mode operation. The address control portion also selects a predetermined number of bits of the address during a power saving mode of operation. The semiconductor memory device, therefore extends the refresh cycle while reducing the refresh time resulting in a lower power consumption.

Abstract: The present invention relates to a hydrogenation catalyst represented by the following formula 1, a method for the preparation thereof, and a method for preparing gamma-butyrolactone using this catalyst. The method for preparing gamma-butyrolactone from maleic anhydride using the catalyst of the invention prepared by stabilizing the precursor particles of copper oxide, zinc oxide, and manganese oxide with a silica exhibits high selectivity, high yield, and high productivity under the operation conditions of a low molar ratio of hydrogen with regard to the reactants, and enables the preparation of gamma-butyrolactone from maleic anhydride with long-term stability without requiring frequent re-activation of the catalyst: Formula (1) CuO(a)ZnO(b)MnO2(c)SiO2(d) wherein a, b, c, and d are represented on the basis of weight, wherein a is 20 to 90, b is 0.01 to 10, c is 0.01 to 5, and d is 5 to 50.

Abstract: A dynamic semiconductor memory device includes a memory cell array including a plurality of memory cells connected between a plurality of word lines and a plurality of bit line pairs. A mode setting portion receives a mode setting code applied from an external portion to generate a power saving mode control signal for a power saving mode of operation responsive to a mode setting command. An address control portion decodes an address applied from an external portion or a refresh address to select one of the plurality of the word lines during a normal mode operation. The address control portion also selects a predetermined number of bits of the address during a power saving mode of operation. The semiconductor memory device, therefore extends the refresh cycle while reducing the refresh time resulting in a lower power consumption.

Abstract: Output drivers in semiconductor memory devices such as Rambus DRAM prevent degradation of the signal characteristics of a channel bus line in a memory module equipped with the semiconductor memory devices. Each semiconductor memory device includes blocks of memory cells. The data of a memory cell in a block is transmitted to a data input/output line through an output driver for the block. The output driver includes a first transistor connected to a reference voltage (ground) and a second transistor. The first transistor is responsive to the data from the selected block. The second transistor selectively connects the first transistor to the data input/output line in response to a column cycle signal for selecting the block or a read control signal containing calibration information about the characteristics of the data input/output line. Data from the selected block is transmitted to the data input/output line via the first and second transistors when the second transistor responds to the column cycle signal.

Abstract: A process for preparing an 1,3-alkanediol from a 3-hydroxyester includes hydrogenating a 3-hydroxyester in an alcohol-containing solvent in the presence of a hydrogenation catalyst prepared by adding an alkaline precipitator to an aqueous solution containing a copper salt to form particles, and then aging the particles following addition of colloidal silica thereto. Novel hydrogenation catalysts so prepared are also disclosed.

Abstract: A process for preparing a 1,3-alkandiol from a 3-hydroxyester, comprises preparing a catalyst by adding an alkaline precipitator to an aqueous copper salt solution to form copper hydroxide particles, and aging the particles following the addition of a colloidal silica thereto; activating the catalyst by reduction with a H2 gas or a H2-containing gas and applying a pressure of about 5 psig to about 2000 psig at a temperature of about 100° C. to about 250° C. in the presence of an activation solvent; and hydrogenating a 3-hydroxyester in a liquid phase slurry with a H2 gas or a H2-containing gas and applying a pressure of about 50 psig to about 3000 psig at a temperature of about 100° C. to about 250° C. in the presence of the activated catalyst and a reaction solvent, whereby a 1,3-alkanediol can be selectively prepared from a 3-hydroxyester with a high yield.

Abstract: A process for preparing a 1,3-alkandiol from a 3-hydroxyester, comprises preparing a catalyst by adding an alkaline precipitator to an aqueous copper salt solution to form copper hydroxide particles, and aging the particles following the addition of a colloidal silica thereto; activating the catalyst by reduction with a H2 gas or a H2-containing gas and applying a pressure of about 5 psig to about 2000 psig at a temperature of about 100° C. to about 250° C. in the presence of an activation solvent; and hydrogenating a 3-hydroxyester in a liquid phase slurry with a H2 gas or a H2-containing gas and applying a pressure of about 50 psig to about 3000 psig at a temperature of about 100° C. to about 250° C. in the presence of the activated catalyst and a reaction solvent, whereby a 1,3-alkanediol can be selectively prepared from a 3-hydroxyester with a high yield.

Abstract: A chip information output circuit including a fuse box, capable of reducing a layout area without affecting input capacitance, is provided. The chip information output circuit includes a plurality of fuse blocks for generating different outputs according to whether a fuse is cut and a pipeline circuit for receiving a plurality of signals, which are output in parallel from the respective fuse blocks, and serially outputting the plurality of signals. Each of the fuse blocks includes a plurality of fuse boxes for generating output signals, the levels of which are either a high or low logic level according to whether the fuses included therein are cut, wherein the respective fuse boxes are enabled in response to the respective control signals and the output lines of the fuse boxes are wired by an OR operation. The pipeline circuit includes a plurality of serially connected latch units for latching signals output from the fuse blocks and outputting the latched signals.

Abstract: A process for preparing an 1,3-alkanediol from a 3-hydroxyester includes hydrogenating a 3-hydroxyester in an alcohol-containing solvent in the presence of a hydrogenation catalyst prepared by adding an alkaline precipitator to an aqueous solution containing a copper salt to form particles, and then aging the particles following addition of colloidal silica thereto. Novel hydrogenation catalysts so prepared are also disclosed.

Abstract: The present invention cloned a cDNA clone encoding isopentenyl diphosphate (hereafter “IPP”) isomerase (EC 5.3.3.2) from a cDNA library of Hevea brasiliensis latex. The clone has a continuous open reading frame encoding a peptide of 234 amino acids with a predicted molecular mass of 26.7 kDa. The deduced protein is acidic with an isoelectric point of 4.7 and shows high sequence identity with other IPP isomerases. The recombinant protein expressed in Escherichia coli showed IPP isomerase activity. In vitro rubber biosynthesis assays using washed rubber particle (WRP) deprived of initiating allylic diphosphates were performed with the addition of IPP isomerase in the reaction mixture. Results revealed that the recombinant IPP isomerase is catalytically active in catalyzing the conversion of IPP to DMAPP, a key activation step of the basic five-carbon isoprene unit in rubber biosynthesis. Southern analysis indicated that the IPP isomerase is encoded by two genes in Hevea rubber tree.

Abstract: Output drivers in semiconductor memory devices such as Rambus DRAM prevent degradation of the signal characteristics of a channel bus line in a memory module equipped with the semiconductor memory devices. Each semiconductor memory device includes blocks of memory cells. The data of a memory cell in a block is transmitted to a data input/output line through an output driver for the block. The output driver includes a first transistor connected to a reference voltage (ground) and a second transistor. The first transistor is responsive to the data from the selected block. The second transistor selectively connects the first transistor to the data input/output line in response to a column cycle signal for selecting the block or a read control signal containing calibration information about the characteristics of the data input/output line. Data from the selected block is transmitted to the data input/output line via the first and second transistors when the second transistor responds to the column cycle signal.

Abstract: A semiconductor memory device having a single-cycle internal read/write function provides data relocation at high speed. Data is read from a first or source address location and then transferred directly from the sense amps to write drivers for writing to a destination address without latching in the interim. Accordingly, chip area is reduced by elimination of the I/O latch circuits. Since both the data read and write operations are performed during one cycle time, the cycle time is reduced while the bandwidth is increased. The invention has particular application to frame buffer memories and the like.

Abstract: A semiconductor memory device having an internal copy function. The memory device includes a memory cell array composed of a plurality of memory cells coupled to a plurality of bit lines, a plurality of column selectors coupled between the bit lines and an input/output data line for being turned on in response to a column select signal, a data amplifying circuit coupled to the input/output data line for amplifying the readout data, a data storage for receiving and latching the amplified data, and a write driver for outputting the latched data to the input/output data line.

Abstract: An apparatus for duplicating micro-films utilizing a cold light tube aligned axially within a transparent cylinder and a conveyor band tensioned by a tension roller and conducted around the transparent cylinder for conveying a superimposed assembly of the original to be copied and the film foil to be exposed into and out of an exposure position while pressing the assembly against the outer surface of the transparent cylinder. The radial distance between the outer surface of the cold light tube and external surface of the transparent cylinder being less than the diameter of the cold light tube. The conveyor band being operated by a reversible drive system employing rotatable chain sprockets.