Abstract: An electronic device according to various embodiments of the present invention may comprise: a housing comprising a first surface facing in a first direction and a second surface facing in a second direction that is opposite to the first direction, the first surface comprising an at least partially transparent part and at least one opening formed adjacent to the at least partially transparent part; a camera positioned inside the housing, the camera comprising an image sensor facing in the first direction through the at least partially transparent part of the housing; and an acoustic component arranged between the first surface and the second surface, the acoustic component comprising a vibration plate configured to generate a sound such that the same moves in at least one direction selected from the first and second directions, a first passage formed in a third direction that is substantially perpendicular to the first direction such that the generated sound passes through the same, and a second passage forme

Abstract: A method of fabricating a thin film transistor, comprising steps of preparing a substrate; forming a polycrystalline silicon layer on the substrate; injecting impurities into the polycrystalline silicon layer for channel doping; patterning the polycrystalline silicon layer and forming a semiconductor layer; annealing the semiconductor layer in an H2O atmosphere, and forming a thermal oxide layer on the semiconductor layer; forming a silicon nitride layer on the thermal oxide layer; forming a gate electrode at a location corresponding to a predetermined region of the semiconductor layer; forming an interlayer insulating layer on the entire surface of the substrate; and forming source and drain electrodes electrically connected with the semiconductor layer.

Abstract: An organic light emission diode (OLED) display device and a method of fabricating the same, wherein the OLED display device includes a substrate including a pixel region and a non-pixel region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, and including a channel region and source/drain regions, a gate electrode disposed to correspond to the channel region of the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, source/drain electrodes electrically connected to the source/drain regions of the semiconductor layer, and an interlayer insulating layer insulating the gate electrode from the source/drain electrodes, wherein areas of the buffer layer, the gate insulating layer and the interlayer insulating layer that are on the non-pixel region, respectively, are removed, and the partially removed area is 8% to 40% of a panel area.

Abstract: An organic light emitting diode display includes: a substrate having first and second regions; a first thin film transistor (TFT) including source and drain electrodes at the first region; a second TFT including source and drain electrodes at the second region; a protective layer on the first and second TFTs; a planarization layer pattern on the protective layer; a first pixel electrode electrically connected to the source electrode or the drain electrode of the first TFT through a first via contact hole through the protective layer; and a second pixel electrode electrically connected to the source electrode or the drain electrode of the second TFT through a second via contact hole formed through the protective layer and the planarization layer pattern, the planarization layer pattern corresponding to a shape of the second pixel electrode and located between the protective layer and the second pixel electrode.

Abstract: Embodiments relate to halftone masks that can uniformly form the height of an underlying layer in two regions that are spaced apart from each other, a manufacturing method thereof, and a method for forming a film using the same. The halftone mask includes a first light blocking unit and a second light blocking unit, and a semi-transmitting unit that is disposed adjacent to the side of the second light blocking unit. The first and second light blocking units block light and are spaced apart from each other at a predetermined interval. The semi-transmitting unit is positioned at a side far from the first light blocking unit and reduces intensity of light. Sum of the second length of the second light blocking unit and the third length of the semi-transmitting unit is larger than the first length of the first blocking unit.

Abstract: An organic light emitting display apparatus includes an organic light emitting diode, a photo sensor, and a light blocking portion. The light blocking portion is at at least a side of the photo sensor so that light emitted from the organic light emitting diode is not directly incident on the photo sensor.

Abstract: An organic light emitting diode display includes: a substrate having first and second regions; a first thin film transistor (TFT) including source and drain electrodes at the first region; a second TFT including source and drain electrodes at the second region; a protective layer on the first and second TFTs; a planarization layer pattern on the protective layer; a first pixel electrode electrically connected to the source electrode or the drain electrode of the first TFT through a first via contact hole through the protective layer; and a second pixel electrode electrically connected to the source electrode or the drain electrode of the second TFT through a second via contact hole formed through the protective layer and the planarization layer pattern, the planarization layer pattern corresponding to a shape of the second pixel electrode and located between the protective layer and the second pixel electrode.

Abstract: A thin film transistor which has improved characteristics, a method of fabricating the same, and an organic light emitting diode (OLED) display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and including a channel region, and source and drain regions, the channel region being doped with impurities, a thermal oxide layer disposed on the semiconductor layer, a silicon nitride layer disposed on the thermal oxide layer, a gate electrode disposed on the silicon nitride layer and corresponding to a predetermined region of the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes electrically connected with the semiconductor layer.

Abstract: Embodiments relate to halftone masks that can uniformly form the height of an underlying layer in two regions that are spaced apart from each other, a manufacturing method thereof, and a method for forming a film using the same. The halftone mask includes a first light blocking unit and a second light blocking unit, and a semi-transmitting unit that is disposed adjacent to the side of the second light blocking unit. The first and second light blocking units block light and are spaced apart from each other at a predetermined interval. The semi-transmitting unit is positioned at a side far from the first light blocking unit and reduces intensity of light. Sum of the second length of the second light blocking unit and the third length of the semi-transmitting unit is larger than the first length of the first blocking unit.

Abstract: An organic light emission diode (OLED) display device and a method of fabricating the same, wherein the OLED display device includes a substrate including a pixel region and a non-pixel region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, and including a channel region and source/drain regions, a gate electrode disposed to correspond to the channel region of the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, source/drain electrodes electrically connected to the source/drain regions of the semiconductor layer, and an interlayer insulating layer insulating the gate electrode from the source/drain electrodes, wherein areas of the buffer layer, the gate insulating layer and the interlayer insulating layer that are on the non-pixel region, respectively, are removed, and the partially removed area is 8% to 40% of a panel area.

Abstract: An organic light emitting display apparatus includes an organic light emitting diode, a photo sensor, and a light blocking portion. The light blocking portion is at at least a side of the photo sensor so that light emitted from the organic light emitting diode is not directly incident on the photo sensor.

Abstract: A SRAM core cell for a light-emitting display applicable to a data driver of an organic electro-luminescence light-emitting display device includes thin film transistors as a data memory for a data driver of the light-emitting display. The SRAM core cell also includes switching transistors and data memory transistors. The switching transistors are coupled to a bit line and a word line to select data writing or reading. The data memory transistors are coupled to a power voltage or a ground voltage to enable data writing and reading. The bit line and the word line are formed in first and second directions. The channels of the switching transistors and the data memory transistors are formed in an oblique direction with respect to the first and second directions.

Abstract: An organic light emitting display (OLED) device including a plurality of electroluminescent (EL) panels that are coupled with one another. In order to facilitate the coupling of the EL panels, respective data drivers are disposed at one side of pixels, and a scan driver and an emission control driver are formed in each of the EL panels. Thus, surfaces of the EL panels that are not connected to data drivers may be coupled with one another to form the OLED device. In the OLED device, a data driver is not formed at interfaces between the EL panels, and uniform pixels are arranged, so that non-uniformity in luminance may be prevented.

Abstract: A thin film transistor which has improved characteristics, a method of fabricating the same, and an organic light emitting diode (OLED) display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and including a channel region, and source and drain regions, the channel region being doped with impurities, a thermal oxide layer disposed on the semiconductor layer, a silicon nitride layer disposed on the thermal oxide layer, a gate electrode disposed on the silicon nitride layer and corresponding to a predetermined region of the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes electrically connected with the semiconductor layer.

Abstract: The present invention provides a TFT substrate that includes a plurality of TFTs each of which have a gate, a source and a drain. The plurality of the TFTs may be formed by first and second active regions formed on the substrate that each have a source region that corresponds to a source and a drain region that corresponds to a drain. An offset region may be formed between the first and second active regions. A single contact hole may reach both the offset region and the adjacent source/drain regions of the first and second active regions.

Abstract: An organic light emitting display (OLED) device including a plurality of electroluminescent (EL) panels that are coupled with one another. In order to facilitate the coupling of the EL panels, respective data drivers are disposed at one side of pixels, and a scan driver and an emission control driver are formed in each of the EL panels. Thus, surfaces of the EL panels that are not connected to data drivers may be coupled with one another to form the OLED device. In the OLED device, a data driver is not formed at interfaces between the EL panels, and uniform pixels are arranged, so that non-uniformity in luminance may be prevented.

Abstract: A SRAM core cell for a light-emitting display applicable to a data driver of an organic electro-luminescence light-emitting display device includes thin film transistors as a data memory for a data driver of the light-emitting display. The SRAM core cell also includes switching transistors and data memory transistors. The switching transistors are coupled to a bit line and a word line to select data writing or reading. The data memory transistors are coupled to a power voltage or a ground voltage to enable data writing and reading. The bit line and the word line are formed in first and second directions. The channels of the switching transistors and the data memory transistors are formed in an oblique direction with respect to the first and second directions.

Abstract: The present invention provides a TFT substrate that includes a plurality of TFTs each of which have a gate, a source and a drain. The plurality of the TFTs may be formed by first and second active regions formed on the substrate that each have a source region that corresponds to a source and a drain region that corresponds to a drain. An offset region may be formed between the first and second active regions. A single contact hole may reach both the offset region and the adjacent source/drain regions of the first and second active regions.

Abstract: An SRAM cell having a latch circuit including two inverters coupled in a chain format. Each inverter is coupled to power through a transistor, and the transistor is turned off when data is written to the SRAM. As a result, the data is easily written to the SRAM cell without data collision since performance of the latch circuit is degraded. Such SRAM cell may be used in a flat panel display to temporarily store digital signals corresponding to data signals for displaying video.