Abstract: A vacuum battery structural assembly and a vacuum multi-cell battery module composed thereof are provided and include a first repeating unit including a first frame plate and a second frame plate with respect to the first frame plate; and an electrolyte channel defined within the first frame plate and the second frame plate to accommodate a liquid electrolyte, wherein both a surface of the first frame plate and a surface of the second frame plate include a vacuum suction area, the vacuum suction area includes a vacuum aperture and a vacuum channel, wherein the vacuum aperture is formed on at least one surface of the first frame plate and the second frame plate, the vacuum channel is positioned inside the first frame plate and the second frame plate, and is configured to generate a longitudinal pressing suction force and seal the first frame plate and the second frame plate.

Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: This disclosure relates to engineered SIRP? variants, and methods of use thereof.

Abstract: An error correction method comprises; when a decoder determines that an input analog code is at a forbidden state, setting a digital binary code as a first predetermined code and inputting the digital binary code to an ECC engine; determining whether the digital binary code has no error or two errors; when the digital binary code has no error, outputting the digital binary code after ECC by the ECC engine; when the digital binary code has two errors, resetting the digital binary code as a second predetermined code and inputting the digital binary code to the ECC engine for ECC; and when the decoder determines that the input analog code is not at the forbidden state, decoding the input analog code into the digital binary code and inputting the digital binary code to the ECC engine for ECC.

Abstract: An error correction method comprises: when a decoder determines that an input analog code is at a forbidden state, setting a digital binary code as a first predetermined code and inputting the digital binary code to an ECC engine; determining whether the digital binary code has no error or two errors; when the digital binary code has no error, outputting the digital binary code after ECC by the ECC engine; when the digital binary code has two errors, resetting the digital binary code as a second predetermined code and inputting the digital binary code to the ECC engine for ECC; and when the decoder determines that the input analog code is not at the forbidden state, decoding the input analog code into the digital binary code and inputting the digital binary code to the ECC engine for ECC.