Patents by Inventor Han-Hsiu CHEN

Han-Hsiu CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistive random access memory and manufacturing method thereoff
    Patent number: 11637241
    Abstract: A RRAM and its manufacturing method are provided. The RRAM includes an interlayer dielectric layer, a first bottom contact structure, and a second bottom contact structure formed on a substrate. A first memory cell is formed on the first bottom contact structure. The first memory cell includes a first bottom electrode layer which includes a first conductive region. A pattern in which the first conductive region is vertically projected on the first bottom contact structure is a first projection pattern. A second memory cell is formed on the second bottom contact structure. The second memory cell includes a second bottom electrode layer which includes a second conductive region. A pattern in which the second conductive region is vertically projected on the second bottom contact structure is a second projection pattern. The second projection pattern is different from the first projection pattern.
    Type: Grant
    Filed: December 8, 2020
    Date of Patent: April 25, 2023
    Assignee: WINBOND ELECTRONICS CORP.
    Inventors: Meng-Hung Lin, Bo-Lun Wu, Po-Yen Hsu, Ying-Fu Tung, Han-Hsiu Chen
  • RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOFF
    Publication number: 20210175421
    Abstract: A RRAM and its manufacturing method are provided. The RRAM includes an interlayer dielectric layer, a first bottom contact structure, and a second bottom contact structure formed on a substrate. A first memory cell is formed on the first bottom contact structure. The first memory cell includes a first bottom electrode layer which includes a first conductive region. A pattern in which the first conductive region is vertically projected on the first bottom contact structure is a first projection pattern. A second memory cell is formed on the second bottom contact structure. The second memory cell includes a second bottom electrode layer which includes a second conductive region. A pattern in which the second conductive region is vertically projected on the second bottom contact structure is a second projection pattern. The second projection pattern is different from the first projection pattern.
    Type: Application
    Filed: December 8, 2020
    Publication date: June 10, 2021
    Inventors: Meng-Hung LIN, Bo-Lun WU, Po-Yen HSU, Ying-Fu TUNG, Han-Hsiu CHEN