Patents by Inventor Han-Hsun CHANG

Han-Hsun CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a structure
    Patent number: 9466528
    Abstract: A method of making a structure includes forming a first supporting member over a substrate, the first supporting member comprising a first material and having a first width defined along a reference plane. The method further includes forming a second supporting member over the substrate, the second supporting member having a second width defined along the reference plane, and the first supporting member and the second supporting member being separated by a gap region. The first width is at least 10 times the second width, and a gap width of the gap region being from 5 to 30 times the second width.
    Type: Grant
    Filed: October 6, 2014
    Date of Patent: October 11, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia-Chu Liu, Yi-Shien Mor, Kuei-Shun Chen, Yu Lun Liu, Han-Hsun Chang, Shiao-Chian Yeh
  • METHOD OF MAKING A STRUCTURE
    Publication number: 20150037976
    Abstract: A method of making a structure includes forming a first supporting member over a substrate, the first supporting member comprising a first material and having a first width defined along a reference plane. The method further includes forming a second supporting member over the substrate, the second supporting member having a second width defined along the reference plane, and the first supporting member and the second supporting member being separated by a gap region. The first width is at least 10 times the second width, and a gap width of the gap region being from 5 to 30 times the second width.
    Type: Application
    Filed: October 6, 2014
    Publication date: February 5, 2015
    Inventors: Chia-Chu LIU, Yi-Shien MOR, Kuei-Shun CHEN, Yu Lun LIU, Han-Hsun CHANG, Shiao-Chian YEH
  • Semiconductors structure with elements having different widths and methods of making the same
    Patent number: 8872339
    Abstract: A structure includes a substrate, a first supporting member over the substrate, a second supporting member over the substrate, and a layer of material over the substrate and covering the first supporting member and the second supporting member. The first supporting member has a first width, and the second supporting member has a second width. The first supporting member and the second supporting member are separated by a gap region. The first width is at least 10 times the second width, and a gap width of the gap region ranges from 5 to 30 times the second width.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: October 28, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Chu Liu, Yi-Shien Mor, Kuei Shun Chen, Yu Lun Liu, Han-Hsun Chang, Shiao-Chian Yeh
  • STRUCTURE AND METHOD OF MAKING THE SAME
    Publication number: 20130207265
    Abstract: A structure includes a substrate, a first supporting member over the substrate, a second supporting member over the substrate, and a layer of material over the substrate and covering the first supporting member and the second supporting member. The first supporting member has a first width, and the second supporting member has a second width. The first supporting member and the second supporting member are separated by a gap region. The first width is at least 10 times the second width, and a gap width of the gap region ranges from 5 to 30 times the second width.
    Type: Application
    Filed: February 10, 2012
    Publication date: August 15, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia-Chu LIU, Yi-Shien MOR, Kuei-Shun CHEN, Yu Lun LIU, Han-Hsun CHANG, Shiao-Chian YEH