Abstract: Disclosed is a power semiconductor device and a manufacturing method thereof and, more particularly, a power semiconductor device and a manufacturing method thereof seeking to capture electrons trapped on one side of a transistor during transistor operation, prevent current collapse effects, and improve reliability consequently by forming or including one or more hole injection regions in a separation space between a gate electrode and a drain electrode.

Abstract: A power semiconductor device and a method of manufacturing the power semiconductor device are disclosed. The power semiconductor device includes an isolation region at or in a bather layer in contact with or adjacent to a drain electrode to reduce or prevent current collapse between a gate electrode and the drain electrode.

Abstract: A clamp has a structure including a band portion wrapping a circular member, such as a hose, a washer portion, a nut portion, and a connection portion and support portions that prevent the band portion from being deformed when a bolt is tightened, these portions being integrally formed with each other into a single portion. Therefore, reduction in the separate portions causes cost reduction, weight reduction, and reduction in risk of loss of the separate portions, and the performance problem in that the clamp rotates when the tightening work is performed by rotation of the bolt is improved.