Abstract: The present application provides an LED chip based on an alumina-silica composite substrate and a fabrication method thereof. The LED chip comprises an alumina-silica composite PSS substrate, a composite buffer layer and an LED structural layer, wherein the composite buffer layer is epitaxially grown on the alumina-silica composite PSS substrate, and the LED structural layer is epitaxially grown on the composite buffer layer. The composite buffer layer comprises: an aluminium oxynitride/aluminium nitride layer and a silicon oxynitride layer, wherein the alumina in the alumina-silica composite PSS substrate is covered with the aluminium oxynitride/aluminium nitride layer, and the silica in the alumina-silica composite PSS substrate is covered with the aluminium oxynitride/aluminium nitride layer and the silicon oxynitride layer in a staggered manner.

Abstract: The invention provides an InGaN-based red-light LED epitaxial film structure with folded quantum well layers, addressing issues of material compatibility, process complexity, and light decay in current red-light LED technologies. By employing specially designed folded quantum wells, stress release layers, and porous structures, the epitaxial structure achieves red-light emission in the 600 nm-620 nm range and improves overall crystalline quality while effectively releasing internal stress. Additionally, optimized epitaxial layer structures and parameters enhance LED efficiency and stability. This innovation offers a promising solution for next-generation red-light LED development and holds significant application value in the semiconductor optoelectronics field.

Abstract: The present application illustrates an AlN layer, a fabrication process and an epitaxial wafer, wherein the AlN layer is provided on a substrate layer, the substrate layer comprising a body and a protrusion, and the AlN layer comprising a first layer and a second layer; the first layer is disposed on the substrate; the second layer is disposed on the first layer; the AlN layer is layered or nucleated, the layered AlN layer is disposed on the body, and the nucleated AlN layer is disposed on the protrusion. The surface of the AlN layer fabricated according to the technical solution illustrated in the present application is uniform, and the surface roughness thereof can match a LED epitaxial wafer better.

Abstract: Disclosed are a method, an apparatus and a device for optimizing a compiler based on tensor data calculation inference. The method includes: obtaining design structure information of a compiler to be optimized, and obtaining a target intermediate conversion layer and an execution operation of the target intermediate conversion layer according to the design structure information; setting a target parameter tuning learning parameter according to the target intermediate conversion layer; determining a compiler object to be optimized according to the execution operation of the target intermediate conversion layer; and performing parameter tuning optimization on the compiler object to be optimized according to the target parameter tuning learning parameter through a target automatic parameter tuning strategy.

Abstract: A method for evaluating terrain uncertainty in flood warning and forecasting is provided. The method includes: S1, acquiring three types of digital elevation model (DEM) data from a shuttle radar topography mission (SRTM), an advanced spaceborne thermal emission and reflection radiometer (ASTER), and an advanced land observing satellite (ALOS); and preprocessing the three types of DEM data; S2, optimizing urban terrain characteristics; S3, constructing a multidimensional parameter space by using Latin hypercube sampling (LHS); S4, calculating flood hydrodynamics numerical value based on multidimensional sample points; and S5, constructing a global sensitivity analysis method frame suitable for urban terrain characteristics-related factors, where a Sobol quantitative method is used in the global sensitivity analysis method frame, and the Sobol quantitative method is used to evaluate uncertainties and sensitivity characteristics of multiple factors of terrain data based on a variance decomposition theory.

Abstract: The present disclosure provides novel V1a partial agonists for partially activating a V1a receptor. The partial V1a agonist has a therapeutic index of at least 20 (e.g., at least 30, at least 40, at least 50, at least 60, at least 70, at least 80, at least 90, at least 100). Also provided are method of treating liver fibrosis, cirrhosis, portal hypertension, ascites, esophageal varices, fundal varices, bleeding, arterial hypotension, and/or hepatorenal syndrome, including administering to a subject in need thereof a therapeutically effective dose of a composition including the V1a partial agonist(s) of the present disclosure, optionally in combination with a V2 antagonist.

Abstract: A high-precision solar resource assessment method based on a downscaling method for complex terrain includes steps as follows. Step (1): an average climatic field is calculated based on monitoring data of sunshine durations, climatic field interpolation results are obtained based on the average climatic field, and a climatic field is created. Step (2): a difference between data of the sunshine durations and the climatic field is calculated, anomaly field interpolation results are obtained based on the difference, and an anomaly field is created. Step (3): the climatic field interpolation results and the anomaly field interpolation results are overlayed. Step (4): bias adjustment is performed on the high-precision sunshine duration interpolation results obtained in the step (3) based on the monitoring data of the sunshine durations to obtain final results. Step (5): daily solar radiation is estimated based on the sunshine durations and extraterrestrial solar radiation.

Abstract: A high-precision solar resource assessment method based on a downscaling method for complex terrain includes steps as follows. Step (1): an average climatic field is calculated based on monitoring data of sunshine durations, climatic field interpolation results are obtained based on the average climatic field, and a climatic field is created. Step (2): a difference between data of the sunshine durations and the climatic field is calculated, anomaly field interpolation results are obtained based on the difference, and an anomaly field is created. Step (3): the climatic field interpolation results and the anomaly field interpolation results are overlayed. Step (4): bias adjustment is performed on the high-precision sunshine duration interpolation results obtained in the step (3) based on the monitoring data of the sunshine durations to obtain final results. Step (5): daily solar radiation is estimated based on the sunshine durations and extraterrestrial solar radiation.

Abstract: The present disclosure provides novel V1a partial agonists for partially activating a V1a receptor. The partial V1a agonist has a therapeutic index of at least 20 (e.g., at least 30, at least 40, at least 50, at least 60, at least 70, at least 80, at least 90, at least 100). Also provided are method of treating liver fibrosis, cirrhosis, portal hypertension, ascites, esophageal varices, fundal varices, bleeding, arterial hypotension, and/or hepatorenal syndrome, including administering to a subject in need thereof a therapeutically effective dose of a composition including the V1a partial agonist(s) of the present disclosure, optionally in combination with a V2 antagonist.

Abstract: Electrochemical energy-storage cells and battery modules having cathodes of differing types relative to one another. In some embodiments, at least one of the cathodes is composed of a nickel-containing-oxide based cathode-active material and at least one other of the cathodes is composed of a metal-phosphate based cathode-active material. In some embodiments, mixing multiple types of cathodes with differing cathode-active materials makes each corresponding cell less prone to entering into thermal runaway and/or reduce the intensity of a thermal-runaway event. Methods of designing cells to be less prone to entering into thermal runaway and/or to reduce the intensity of a thermal-runaway event.

Abstract: A fluid management device and a thermal management system are provided. The fluid management device includes a fluid management module, a connecting member and a fluid management component, wherein the fluid management module is fixedly or limitedly connected to the connecting member; at least part of the fluid management component is located in a mounting hole; the fluid management device has a communicating channel, at least part of which is located in the connecting member; the communicating channel includes a first communicating channel being in communication with a first valve cavity of a first fluid management module, and a second communicating channel including a first sub-channel, a second sub-channel being in communication with a second valve cavity of a second fluid management module, and a third sub-channel. The opening degree of the second communicating channel can be adjusted by the fluid management component.

Abstract: The present application relates to an LED epitaxial structure and the preparation method and application thereof. The LED epitaxial structure comprises a first multiple-quantum-well light-emitting layer and a second multiple-quantum-well light-emitting layer. The first multiple-quantum-well light-emitting layer comprises a first shoes layer, a first well layer, a first cap layer, and a first Barrier layer epitaxially grown from bottom to top in sequence. The second multiple-quantum-well light-emitting layer comprises a second shoes layer, a second well layer, a second cap layer, and a second Barrier layer epitaxially grown from bottom to top in sequence. The technical solutions disclosed in the present application can solve the problem that the 365 nm to 375 nm wave band LED would emit yellow light.

Abstract: Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-layers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN/Alx1Iny1Ga(1-x1-y1)N stack, where 0<x1?1 and 0?y1<1. An LED device including the multi-quantum well structure is also disclosed.

Abstract: A method is disclosed for a coprocessor of a device. The coprocessor may initiate, based on an instruction received from a processor, a wireless communication service required by the processor. The coprocessor further generates a drive instruction for driving a wireless communications module of the device to perform the wireless communication service, and then the coprocessor sends the drive instruction to the wireless communications module.

Abstract: The present application provides an LED chip based on an alumina-silica composite substrate and a fabrication method thereof. The LED chip comprises an alumina-silica composite PSS substrate, a composite buffer layer and an LED structural layer, wherein the composite buffer layer is epitaxially grown on the alumina-silica composite PSS substrate, and the LED structural layer is epitaxially grown on the composite buffer layer. The composite buffer layer comprises: an aluminium oxynitride/aluminium nitride layer and a silicon oxynitride layer, wherein the alumina in the alumina-silica composite PSS substrate is covered with the aluminium oxynitride/aluminium nitride layer, and the silica in the alumina-silica composite PSS substrate is covered with the aluminium oxynitride/aluminium nitride layer and the silicon oxynitride layer in a staggered manner.

Abstract: The present disclosure provides a growth method and structure of LED epitaxy. The growth method of LED epitaxy comprises: providing a layer of substrate, wherein the substrate is an Al2O3 substrate or an Al2O3/SiO2 composite substrate; successively depositing and growing a SiC buffer layer and a u-GaN layer on the substrate; wherein the temperature used for depositing the SiC buffer layer is 650˜1550 degrees; the gas used for depositing the SiC buffer layer is a silicon source gas and a carbon source gas, a flow rate of the silicon source gas is 1˜1000 sccm, and a flow rate of the carbon source gas is 1˜1000 sccm; a gas carrier gas used for depositing the SiC buffer layer has a flow rate of 10˜500 slm; the SiC buffer layer is deposited at a pressure of 100˜700 torr; the SiC buffer layer is deposited for a thickness of 10˜1000 A.

Abstract: A method, a device and a storage medium for evaluating wind energy resources in complex terrain are provided, and the method includes: obtaining a climate field based on observation data of wind speed; obtaining an anomaly field; superimposing a climate field interpolation result and an outlier interpolation result with a consistent spatial resolution to obtain a wind speed interpolation result; performing a deviation correction on the wind speed interpolation result and the observation data of wind speed to obtain a final result; calculating an average effective wind power density; and estimating a wind power density based on a daily average wind speed. An accuracy of wind speed data is improved; the wind energy resources are evaluated in situations including complex terrain and lack of hourly wind speed data; and a high-precision data set of the wind energy resources is established to improve an evaluation accuracy of the wind energy resources.

Abstract: The present invention provides an electrolyte for a secondary battery and a secondary battery including same. The electrolyte for a secondary battery comprises a solvent comprising a compound having a structure represented by Formula, wherein R is selected from H, F, CH3 and CF3; R? and R? are each independently selected from H, CH3, CH2CH3, CF3, CH2CF3 and CF2CH3; and wherein based on the total weight of the solvent, the amount of the compound represented by formula I ranges from 81 wt % to 99 wt %; or the amount of the compound represented by formula I ranges from 90 wt % to 99 wt % By using the electrolyte for a secondary battery and the secondary battery including same of the present invention, the formed SEI film is more stable thereby prevent the electrolyte further reduced by anode, and increased battery life and cycle stability could be achieved.

Abstract: The present application provides an LED epitaxial wafer and a fabrication process thereof, wherein an N-type GaN layer of the LED epitaxial wafer comprises an N_SL layer and an N_Bulk layer. N_SL layer and N_Bulk layer are equivalent to form multiple capacitive structures, and different silicon doping concentrations enhance the current diffusion and enhance the antistatic capability of LED epitaxial wafer. The arrangement of N_SL layer and N_Bulk layer structure reduces the dislocation density of quantum well light-emitting layer and improves the lattice quality of quantum well light-emitting layer. In the manufacturing process of the LED epitaxial wafer provided by the present application, the SiH4 valve unit of the MOCVD device does not need a higher switching frequency, thereby improving the service life of the SiH4 valve unit.