Abstract: Disclosed is a compact integrated apparatus of an interferometric radar altimeter (IRA) and a radar altimeter (RA) capable of performing individual missions by altitude, which includes: a plurality of antennas; a signal processing control unit selecting an RA mode at a low altitude and selecting an IRA mode at a high altitude based on a mode threshold and selecting an FMCW waveform at the low altitude and selecting an FM pulse waveform at the high altitude based on a waveform threshold; and a transceiving unit transmitting a signal by a first antenna positioned at an outermost portion among the plurality of antennas and receiving a signal by an nth antenna positioned at another outermost portion among the plurality of antennas in the RA mode and transmitting a signal through the first antenna and receiving signals through the plurality of antennas in the IRA mode.

Abstract: Disclosed is a ferritic stainless steel with improved high temperature creep resistance. The disclosed ferritic stainless steel comprises by weight %: 0.005 to 0.03% of C, 0.005 to 0.03% of N, 0.05 to 0.9% of Si, 0.05 to 0.9% of Mn, 14.0 to 19.0% of Cr, 0.1 to 0.6% of Ti, 0.1 to 0.6% of Nb, 0.1 to 0.6% of Cu, 0.01 to 0.04% of P, 0.01% or less (excluding 0) of S, and the balance of iron (Fe) and inevitable impurities, and is characterized by satisfying Expressions (1) and (2) below. 0.5?Nb/Cu?3??Expression (1) 20?[2Nb+Ti]/[C+N]??Expression (2) wherein Nb, Cu, Ti, C, and N denote contents (wt %) of each element.

Abstract: A network control method for handover in a mobile time-sensitive network (TSN) communication system is provided. The network control method includes: communicating of a user terminal within a wireless communication range of a first AP with an end system through the first AP; determining whether to handover to a second AP by determining communication strength between the user terminal and the first AP; requesting handover to a controller when the handover to the second AP is determined; reconfiguring a TSN communication operation after the handover, determining handover timing, and generating a handover command by a controller; transmitting the handover command to the first AP, the user terminal, and the second AP; and applying the reconfigured TSN communication operation to the second AP and the user terminal at the handover timing.

Abstract: A semiconductor device including a switching element on a substrate, a pad isolation layer on the switching element, a conductive pad passing through the pad isolation layer and connected to the switching element, an insulating pattern on the pad isolation layer and having a height greater than a horizontal width, a lower electrode on side surfaces of the insulating pattern on side surfaces of the insulating pattern and in contact with the conductive pad, a capacitor dielectric layer on the lower electrode and having a monocrystalline dielectric layer and a polycrystalline dielectric layer, the monocrystalline dielectric layer being relatively close to side surfaces of the insulating pattern compared to the polycrystalline dielectric layer an upper electrode on the capacitor dielectric layer may be provided.

Abstract: An electronic device having a self-diagnosis function is proposed. In the electronic device, a fault detector is provided on a primary side of a power board, so that fault states of a main board and a load may be detected even when the main board is broken or power is not applied to the main board. In addition, as long as commercial alternating power is input, even in a state where a power switch is turned off, the electronic device is supplied with the power, so that various types of faults in the main board and the load may be detected.

Abstract: A semiconductor device including a switching element on a substrate, a pad isolation layer on the switching element, a conductive pad passing through the pad isolation layer and connected to the switching element, an insulating pattern on the pad isolation layer and having a height greater than a horizontal width, a lower electrode on side surfaces of the insulating pattern on side surfaces of the insulating pattern and in contact with the conductive pad, a capacitor dielectric layer on the lower electrode and having a monocrystalline dielectric layer and a polycrystalline dielectric layer, the monocrystalline dielectric layer being relatively close to side surfaces of the insulating pattern compared to the polycrystalline dielectric layer an upper electrode on the capacitor dielectric layer may be provided.

Abstract: Disclosed herein are a biodegradable polymer microparticle for a filler comprising a core and a shell, wherein the core contains secondary particles including aggregates of a plurality of primary particles, the shell has a raspberry shaped structure, an average particle diameter (D50) of the biodegradable polymer microparticle ranges from 20 to 200 ?m, a manufacturing method thereof, a freeze-dried body including the same, and filler injection including the same.

Abstract: Semiconductor devices are provided. The semiconductor devices includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, a capacitor dielectric film that is on the lower electrode and includes both a tetragonal crystal system and an orthorhombic crystal system, a first doping layer that is between the lower electrode and the capacitor dielectric film and includes a first metal, and an upper electrode on the capacitor dielectric film.

Abstract: Disclosed herein are a biodegradable polymer microparticle for a filler, a freeze-dried body including the same, a manufacturing method thereof, and filler injection including the freeze-dried body. The freeze-dried body includes hydrophilic surface-treated biodegradable polymer microparticle and a biocompatible carrier, wherein the hydrophilic surface-treated biodegradable polymer microparticle has an average particle diameter (D50) of 20 to 50 ?m and is polydioxanone which has a carboxyl group on the surface thereof. The hydrophilic surface-treated biodegradable polymer microparticle is a plasma surface-treated product or a base surface-treated product using discharge of the biodegradable polymer microparticle. The content of the biocompatible carrier is 1 to 5 parts by weight based on 100 parts by weight of the freeze-dried body.

Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.

Abstract: A nozzle assembly for injecting fuel and compressed air into a combustion chamber of a gas turbine combustor is provided. The nozzle assembly includes a nozzle body disposed in the combustor and having a coolant outlet on one end of which an inside of the nozzle body communicates with the combustion chamber, a spray nozzle disposed in the nozzle body and including a plurality of first nozzle tubes each having a first flow path formed therein to allow combustion air to flow into the combustion chamber and a fuel hole formed to supply fuel, and a second nozzle tube having through-holes to allow the first nozzle tubes to pass therethrough and a second flow path formed to supply fuel, and a diaphragm disposed inside of the nozzle body and including a plurality of coolant flow holes through which a coolant supplied to the nozzle body is supplied towards one end of the nozzle body and a plurality of tube holes through which the first nozzle tubes pass.

Abstract: A network control method for handover in a mobile time-sensitive network (TSN) communication system is provided. The network control method includes: communicating of a user terminal within a wireless communication range of a first AP with an end system through the first AP; determining whether to handover to a second AP by determining communication strength between the user terminal and the first AP; requesting handover to a controller when the handover to the second AP is determined; reconfiguring a TSN communication operation after the handover, determining handover timing, and generating a handover command by a controller; transmitting the handover command to the first AP, the user terminal, and the second AP; and applying the reconfigured TSN communication operation to the second AP and the user terminal at the handover timing.

Abstract: An organic light emitting diode includes a first electrode; a second electrode facing the first electrode; and a first emitting material layer including a first compound, a second compound and a third compound and positioned between the first and second electrodes, wherein an onset wavelength of the second compound is greater than an onset wavelength of the first compound and is smaller than an onset wavelength of the third compound, wherein a maximum emission wavelength of the second compound is smaller than a maximum emission wavelength of the first compound, and a maximum emission wavelength of the third compound is equal to or smaller than a maximum emission wavelength of the first compound, and wherein a full width at half maximum of each of the second and third compounds is smaller than a full width at half maximum of the first compound.

Abstract: Provided are a rotatable display device and a method of displaying content using the same. The display device includes a display; and a controller configured to control the display to display first video content based on a first source, sense pivoting of the display while the first video content is displayed, and control the display, in response to the pivoting, to display second video content based on at least one second source different from the first source, the second video content being different from the first video content.

Abstract: A preparation method of indium oxide with stable morphology includes: (1) mixing indium oxide powder and bismuth oxide powder according to a mass ratio of 1:0.1-0.5 to obtain a powder mixture; (2) putting the powder mixture into a ball mill for ball milling at room temperature to obtain a uniform powder mixture; (3) putting the obtained uniform powder mixture into a muffle furnace and calcining at 700-1000° C.; and (4) obtaining the indium oxide with cubic stable morphology after the muffle furnace naturally cools to room temperature. The method has advantages of simple synthesis process, short synthesis period, high sample yield, no need of complicated equipment, and morphology of the obtained indium oxide can be maintained after being heated at a high temperature within 1000° C. for 2 hours. An electrochemical sensor prepared by using the indium oxide obtained by the method has better selectivity to nonane.

Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.

Abstract: An embodiment of the present disclosure provides a method of aging smoking materials for constituting at least a portion of a smoking material portion of a smoking article, the method including preparing an oak barrel and the smoking materials, putting the smoking materials into an inner space of the oak barrel, sealing the oak barrel, and aging the smoking materials.

Abstract: This invention provides a sensing electrode for detecting at least one target gas in a gas mixture having at least one interference gas. In one embodiment, the sensing electrode has: (a) a layer of sensing nanoparticles; (b) a reaction interface; and (c) a solid state electrolyte; each of the sensing nanoparticles has a catalytic core and a photoactive porous shell, the catalytic core breaks down said at least one interference gas, the photoactive porous shell enhances electrochemical reaction at said reaction interface when illuminated with light of a specific wavelength.

Abstract: A preparation method of indium oxide with stable morphology includes: (1) mixing indium oxide powder and bismuth oxide powder according to a mass ratio of 1:0.1-0.5 to obtain a powder mixture; (2) putting the powder mixture into a ball mill for ball milling at room temperature to obtain a uniform powder mixture; (3) putting the obtained uniform powder mixture into a muffle furnace and calcining at 700-1000° C.; and (4) obtaining the indium oxide with cubic stable morphology after the muffle furnace naturally cools to room temperature. The method has advantages of simple synthesis process, short synthesis period, high sample yield, no need of complicated equipment, and morphology of the obtained indium oxide can be maintained after being heated at a high temperature within 1000° C. for 2 hours. An electrochemical sensor prepared by using the indium oxide obtained by the method has better selectivity to nonane.

Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.