Patents by Inventor Han Jun Lee
Han Jun Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11955697Abstract: An antenna device according to an embodiment of the present invention includes a dielectric layer, a radiator and a dummy electrode. The radiator is disposed on the upper surface of the dielectric layer. The radiator includes a first mesh structure, and the first mesh structure includes a first antenna electrode line and a second antenna electrode line which cross each other. The dummy electrode is spaced apart from the radiator by the separation region on the upper surface of the dielectric layer. The dummy electrode includes a second mesh structure, and the second mesh structure includes a first dummy electrode line and a second dummy electrode line which cross each other. A spacing distance between the first dummy electrode line and the radiator is different from a spacing distance between the second dummy electrode line and the radiator at the separation region.Type: GrantFiled: October 13, 2021Date of Patent: April 9, 2024Assignee: DONGWOO FINE-CHEM CO., LTD.Inventors: Young Jun Lee, Han Sub Ryu, Gi Hwan Ahn
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Patent number: 11776642Abstract: A method of operating a memory device that includes a plurality of stages each having a plurality of page buffers. The method including performing a verify operation of a first program loop from among a plurality of program loops, the verify operation of the first program loop including, performing a first off-cell counting operation on a first stage of the plurality of stages based on a first sampling rate to generate a first off-cell counting result; selectively changing the first sampling rate based on the first off-cell counting result to generate a changed first sampling rate; and performing a second off-cell counting operation on a second stage of the plurality of stages based on one of the first sampling rate and the changed first sampling rate to generate a second off-cell counting result.Type: GrantFiled: December 13, 2021Date of Patent: October 3, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-Won Yun, Han-Jun Lee
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Patent number: 11682463Abstract: A memory device includes a voltage generator that provides a read voltage to a selected word line and provides a pass voltage to a plurality of unselected word lines, and a deterioration level detection circuit. The selected word line and the unselected word lines are connected to a plurality of memory cells. The deterioration level detection circuit detects a deterioration level of memory cells connected to the selected word line based on data of memory cells that receive the read voltage. The memory cells connected to the selected word line and the memory cells that receive the read voltage are included in the plurality of memory cells. The voltage generator changes the pass voltage provided to the unselected word lines based on the deterioration level.Type: GrantFiled: August 20, 2021Date of Patent: June 20, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Han Jun Lee, Seung Bum Kim, Il Han Park
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Publication number: 20230145750Abstract: A nonvolatile memory may include; a first memory cell array including a first selection transistor connected to a first string selection line, a second memory cell array including a second selection transistor connected to a second string selection line and spaced apart from the first string selection line by a first cutting line, and a peripheral circuit. The peripheral circuit may provide a first program voltage to the first selection transistor, provide a second program voltage to the second selection transistor different from the first program voltage, program the first selection transistor with a first threshold voltage in response to the first program voltage, and program the second selection transistor with a second threshold voltage level greater than the first threshold voltage in response to the second program voltage.Type: ApplicationFiled: March 28, 2022Publication date: May 11, 2023Inventors: SANG-WON PARK, WON-TAECK JUNG, HAN-JUN LEE, SU CHANG JEON
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Patent number: 11594294Abstract: A method of operating a memory device that includes a plurality of stages each having a plurality of page buffers. The method including performing a verify operation of a first program loop from among a plurality of program loops, the verify operation of the first program loop including, performing a first off-cell counting operation on a first stage of the plurality of stages based on a first sampling rate to generate a first off-cell counting result; selectively changing the first sampling rate based on the first off-cell counting result to generate a changed first sampling rate; and performing a second off-cell counting operation on a second stage of the plurality of stages based on one of the first sampling rate and the changed first sampling rate to generate a second off-cell counting result.Type: GrantFiled: October 4, 2021Date of Patent: February 28, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-won Yun, Han-jun Lee
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Publication number: 20220101931Abstract: A method of operating a memory device that includes a plurality of stages each having a plurality of page buffers. The method including performing a verify operation of a first program loop from among a plurality of program loops, the verify operation of the first program loop including, performing a first off-cell counting operation on a first stage of the plurality of stages based on a first sampling rate to generate a first off-cell counting result; selectively changing the first sampling rate based on the first off-cell counting result to generate a changed first sampling rate; and performing a second off-cell counting operation on a second stage of the plurality of stages based on one of the first sampling rate and the changed first sampling rate to generate a second off-cell counting result.Type: ApplicationFiled: December 13, 2021Publication date: March 31, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Sung-won YUN, Han-jun LEE
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Publication number: 20220028464Abstract: A method of operating a memory device that includes a plurality of stages each having a plurality of page buffers. The method including performing a verify operation of a first program loop from among a plurality of program loops, the verify operation of the first program loop including, performing a first off-cell counting operation on a first stage of the plurality of stages based on a first sampling rate to generate a first off-cell counting result; selectively changing the first sampling rate based on the first off-cell counting result to generate a changed first sampling rate; and performing a second off-cell counting operation on a second stage of the plurality of stages based on one of the first sampling rate and the changed first sampling rate to generate a second off-cell counting result.Type: ApplicationFiled: October 4, 2021Publication date: January 27, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Sung-won YUN, Han-jun LEE
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Publication number: 20210383875Abstract: A memory device includes a voltage generator that provides a read voltage to a selected word line and provides a pass voltage to a plurality of unselected word lines, and a deterioration level detection circuit. The selected word line and the unselected word lines are connected to a plurality of memory cells. The deterioration level detection circuit detects a deterioration level of memory cells connected to the selected word line based on data of memory cells that receive the read voltage. The memory cells connected to the selected word line and the memory cells that receive the read voltage are included in the plurality of memory cells. The voltage generator changes the pass voltage provided to the unselected word lines based on the deterioration level.Type: ApplicationFiled: August 20, 2021Publication date: December 9, 2021Inventors: HAN JUN LEE, SEUNG BUM KIM, IL HAN PARK
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Patent number: 11164646Abstract: A method of operating a memory device that includes a plurality of stages each having a plurality of page buffers. The method including performing a verify operation of a first program loop from among a plurality of program loops, the verify operation of the first program loop including, performing a first off-cell counting operation on a first stage of the plurality of stages based on a first sampling rate to generate a first off-cell counting result; selectively changing the first sampling rate based on the first off-cell counting result to generate a changed first sampling rate; and performing a second off-cell counting operation on a second stage of the plurality of stages based on one of the first sampling rate and the changed first sampling rate to generate a second off-cell counting result.Type: GrantFiled: March 2, 2020Date of Patent: November 2, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-won Yun, Han-jun Lee
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Patent number: 11143983Abstract: A toner supplying apparatus used in an image forming apparatus is provided. The toner supply apparatus includes a plurality of toner containers, a plurality of fixing members, an operating member, and a driving force. Each of the plurality of toner containers includes a fixing recess. The plurality of fixing members are to be selectively coupled to the fixing recesses of the plurality of toner containers. The operating member is to slide with respect to the plurality of toner containers, and to operate at least one of the plurality of fixing members to separate the operated fixing members from the coupled fixing recess. The driving device is to move the operating member.Type: GrantFiled: October 1, 2018Date of Patent: October 12, 2021Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Jae Won Choi, Han Jun Lee
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Patent number: 11127472Abstract: A memory device includes a voltage generator that provides a read voltage to a selected word line and provides a pass voltage to a plurality of unselected word lines, and a deterioration level detection circuit. The selected word line and the unselected word lines are connected to a plurality of memory cells. The deterioration level detection circuit detects a deterioration level of memory cells connected to the selected word line based on data of memory cells that receive the read voltage. The memory cells connected to the selected word line and the memory cells that receive the read voltage are included in the plurality of memory cells. The voltage generator changes the pass voltage provided to the unselected word lines based on the deterioration level.Type: GrantFiled: March 2, 2020Date of Patent: September 21, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Han Jun Lee, Seung Bum Kim, Il Han Park
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Patent number: 11049547Abstract: A memory device includes multiple word lines. A method of operating the memory device includes: performing a first dummy read operation, with respect to first memory cells connected to a first word line among the word lines, by applying a dummy read voltage, having an offset level of a first level, to the first word line; determining, based on a result of the performing of the first dummy read operation, degradation of a threshold voltage distribution of the first memory cells; adjusting an offset level of the dummy read voltage as a second level, based on a result of the determining of the threshold voltage distribution; and performing a second dummy read operation with respect to second memory cells connected to a second word line among the word lines, by applying a dummy read voltage, having the offset level adjusted as the second level, to the second word line among the word lines.Type: GrantFiled: August 5, 2020Date of Patent: June 29, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Han-Jun Lee, Seung-Bum Kim, Chul-Bum Kim, Seung-Jae Lee
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Patent number: 10910080Abstract: A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.Type: GrantFiled: May 4, 2020Date of Patent: February 2, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Jin Bae Bang, Seung Hwan Song, Dae Seok Byeon, Il Han Park, Hyun Jun Yoon, Han Jun Lee, Na Young Choi
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Publication number: 20200371451Abstract: A toner supplying apparatus used in an image forming apparatus is provided. The toner supply apparatus includes a plurality of toner containers, a plurality of fixing members, an operating member, and a driving force. Each of the plurality of toner containers includes a fixing recess. The plurality of fixing members are to be selectively coupled to the fixing recesses of the plurality of toner containers. The operating member is to slide with respect to the plurality of toner containers, and to operate at least one of the plurality of fixing members to separate the operated fixing members from the coupled fixing recess. The driving device is to move the operating member.Type: ApplicationFiled: October 1, 2018Publication date: November 26, 2020Applicant: Hewlett-Packard Development Company, L.P.Inventors: Jae Won CHOI, Han Jun LEE
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Patent number: 10845752Abstract: Disclosed herein is an image forming apparatus. The image forming apparatus includes at least one pressing unit configured to bring the developing roller and the photoreceptor in contact with each other, an operating unit which is configured to be in an operating position during which a pressing force of the pressing unit is generated, and a standby during at which the pressing force is released, and a cover unit detachably provided to one side of the developing device and configured to guide movement of the operating unit to the operating position. By this configuration, operation of the operating unit is linked with an operation of detachment or attachment of the cover unit.Type: GrantFiled: August 31, 2015Date of Patent: November 24, 2020Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Wan Ho Lee, Jin Ho Park, Han Jun Lee
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Publication number: 20200293988Abstract: Disclosed embodiments provide systems and methods related to providing delivery offers for use with a user interface. A method for providing delivery offers comprises receiving, from a mobile device, a request for one or more delivery tasks including a geographical area and a time frame, accessing a database storing delivery tasks, each delivery task associated with a status of fully assigned, partially assigned, or not assigned based on a comparison of a number of workers assigned to the task and a number of workers necessary to complete the task, determining which of the stored delivery tasks needing assignment have a delivery route in the received geographical area and time frame, selecting one or more delivery offers if a status of each determined delivery offers is equal to partially assigned or not assigned, and responding to the received request by transmitting the one or more selected delivery offers to the mobile device.Type: ApplicationFiled: March 12, 2019Publication date: September 17, 2020Inventors: Erik REHN, Yoo Suk KIM, Yul Hee LEE, Hye Leen CHOI, Han Jun LEE, Hyung Geun JI
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Publication number: 20200265908Abstract: A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.Type: ApplicationFiled: May 4, 2020Publication date: August 20, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Jin Bae BANG, Seung Hwan SONG, Dae Seok BYEON, Il Han PARK, Hyun Jun YOON, Han Jun LEE, Na Young CHOI
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Patent number: 10734082Abstract: A memory device includes multiple word lines. A method of operating the memory device includes: performing a first dummy read operation, with respect to first memory cells connected to a first word line among the word lines, by applying a dummy read voltage, having an offset level of a first level, to the first word line; determining, based on a result of the performing of the first dummy read operation, degradation of a threshold voltage distribution of the first memory cells; adjusting an offset level of the dummy read voltage as a second level, based on a result of the determining of the threshold voltage distribution; and performing a second dummy read operation with respect to second memory cells connected to a second word line among the word lines, by applying a dummy read voltage, having the offset level adjusted as the second level, to the second word line among the word lines.Type: GrantFiled: February 13, 2019Date of Patent: August 4, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Han-Jun Lee, Seung-Bum Kim, Chul-Bum Kim, Seung-Jae Lee
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Publication number: 20200202960Abstract: A method of operating a memory device that includes a plurality of stages each having a plurality of page buffers. The method including performing a verify operation of a first program loop from among a plurality of program loops, the verify operation of the first program loop including, performing a first off-cell counting operation on a first stage of the plurality of stages based on a first sampling rate to generate a first off-cell counting result; selectively changing the first sampling rate based on the first off-cell counting result to generate a changed first sampling rate; and performing a second off-cell counting operation on a second stage of the plurality of stages based on one of the first sampling rate and the changed first sampling rate to generate a second off-cell counting result.Type: ApplicationFiled: March 2, 2020Publication date: June 25, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Sung-won YUN, Han-jun LEE
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Publication number: 20200202955Abstract: A memory device includes a voltage generator that provides a read voltage to a selected word line and provides a pass voltage to a plurality of unselected word lines, and a deterioration level detection circuit. The selected word line and the unselected word lines are connected to a plurality of memory cells. The deterioration level detection circuit detects a deterioration level of memory cells connected to the selected word line based on data of memory cells that receive the read voltage. The memory cells connected to the selected word line and the memory cells that receive the read voltage are included in the plurality of memory cells. The voltage generator changes the pass voltage provided to the unselected word lines based on the deterioration level.Type: ApplicationFiled: March 2, 2020Publication date: June 25, 2020Inventors: HAN JUN LEE, SEUNG BUM KIM, IL HAN PARK