Abstract: A floating image device includes a collimating optical assembly, a light source assembly, an imaging unit, and a microlens array. The light source assembly is suitable for emitting a beam to the collimating optical assembly, the beam is converted into a collimated beam by the collimating optical assembly, and a spread angle of the collimated beam at a half-intensity position is smaller than +/?15°. The imaging unit is arranged on one side of the collimating optical assembly that is away from the light source assembly, and the collimated beam is suitable for being converted into an image beam by the imaging unit in a collimated manner; and the microlens array is arranged on one side of the imaging unit. The microlens array focuses the image beam and projects a focused image beam into a floating image. The floating image device is capable of making the floating image clear.

Abstract: A swimming timer including a fluid container, a fluid channel, a fluid sensor, a control circuit board and a display device. The fluid channel is connected to the fluid container and the fluid sensor, and the control circuit board is wired with the fluid sensor and the display device. The fluid container is installed and mounted on a side-wall of a swimming lane. When a swimmer starts, turns and stops, the fluid container will be touched and compressed forcing the fluid inside to flow into the fluid channel. The fluid sensor detects the fluid flow and generates electronic signals accordingly for the control circuit board and the built-in timing and stopwatch program to use as the input commands of start, lap and stop to compute the swimming time and the number of swimming laps. The display device is to show the results for the swimmer reference.

Abstract: A memory device comprising: a memory cell array comprising multiple memory cells, and a controller configured to repeatedly perform a program loop comprising a voltage application interval and a verification interval until a program operation for cells that have been connected to a word line that have been selected as a program target reach a threshold voltage level and configured to adjust an increase in a level of a program voltage that is applied to the selected word line in the voltage application interval of a second program loop following a first program loop, based on a result of a comparison between a threshold voltage level of each of cells that have been selected as a verification target, among the cells that have been connected to the selected word line, and a pre-target level in the verification interval of the first program loop, among the program loops that are repeated.

Abstract: A memory device includes: a plurality of memory cells; a peripheral circuit configured to perform a plurality of program loops each including a program voltage apply operation of applying a program voltage to selected memory cells, and a verify operation of verifying a program state of the selected memory cells; and a control logic configured to control the peripheral circuit to apply program voltages increasing in a step-wise manner by a first step voltage in program loops in a first state, and increasing by a second step voltage that is lower than the first step voltage in program loops in a second state that occur after the program loops in the first state. The first state and the second state of the program loops are determined based on when a verify operation on a program state having a highest threshold voltage is performed.

Abstract: A memory device, and a method of operating the same, includes a plurality of memory cells configured to be programmed to any one of a plurality of program states, a peripheral circuit configured to perform a plurality of program loops on the plurality of memory cells, and a program operation controller. The program operation controller is configured to control the peripheral circuit such that a verify operation for a second program state is performed from a second program loop after a verify operation for a first program state performed from a first program loop passes, wherein the first program loop is performed before the second program loop.

Abstract: Provided herein is a memory device for performing a program operation, a method of operating the memory device, and a storage device having the memory device. The method of operating a memory device includes receiving a first data bit among a plurality of data bits to be stored in each of a plurality of memory cells from a memory controller, performing a program voltage apply operation on the plurality of memory cells based on the first data bit, and receiving a second data bit among the plurality of data bits from the memory controller while performing the program voltage apply operation.

Abstract: A method for an electronic device within a server processing data in an intelligent transport system according to one embodiment comprises receiving, from vehicles, information of an ego-vehicle including absolute coordinates of the ego-vehicle and information of surrounding objects including relative coordinates of the surrounding objects recognized by the ego-vehicle and generating integrated object information including absolute coordinates of the respective vehicles based on the received information.

Abstract: An aluminum plastic film for a lithium battery and a method for manufacturing the same are provided. The method includes steps as follows: preparing a polyolefin adhesive; coating the polyolefin adhesive onto one surface of an aluminum foil layer; disposing an inner polyolefin layer onto the polyolefin adhesive; and drying the polyolefin adhesive, so that a polyolefin adhesive layer is formed between the aluminum foil layer and the inner polyolefin layer. Components of the polyolefin adhesive include a modified polyolefin polymer and a hardener. The modified polyolefin polymer has a modified group, a structure of the modified group contains maleic anhydride, and a molecular weight of the modified polyolefin polymer ranges from 100,000 g/mol to 200,000 g/mol.

Abstract: Embodiments provide an emissive display device including a light emitting diode that includes a first circuit part disposed in a display area and a cathode electrically connected to the first circuit part; and a non-emissive element that includes a second circuit part disposed in the display area and a cathode electrically connected to the second circuit part, and the cathode of the non-emissive element is separated from the cathode of the light emitting diode by a separator.

Abstract: To program in a nonvolatile memory device including a cell region including first metal pads and a peripheral region including second metal pads and vertically connected to the cell region by the first metal pads and the second metal pads, a memory block is provided with a plurality of sub blocks disposed in a vertical direction where the memory block includes a plurality of cell strings each including a plurality of memory cells connected in series and disposed in the vertical direction. A plurality of intermediate switching transistors are disposed in a boundary portion between two adjacent sub blocks in the vertical direction. Each of the plurality of intermediate switching transistors is selectively activated based on a program address during a program operation. The selectively activating each of the plurality of intermediate switching transistors includes selectively turning on one or more intermediate switching transistors in a selected cell string based on the program address.

Abstract: An apparatus for manufacturing a slurry for an electrode includes a mixer configured to mix an electrode active material, a conductive material, a binder, and a solvent to form a slurry; a flow path configured to sample the slurry from the mixing part to provide a sample; a weigher configured to measure a weight sample; a washer configured to wash an interior of the weigher; and a gas discharge part configured to circulate air in the weigher.

Abstract: A non-contact switch and a non-contact switch control system are provided. The non-contact switch control system includes multiple non-contact switches, each including an infrared light module, a brightness sensing unit, a second switch module and a processing unit. The infrared light module includes a first switch module, transmitting unit and receiving unit. The first switch module has a first switch state. The transmitting unit connected to the first switch module emits infrared light according to the first switch state. The receiving unit receives a reflected light of the infrared light. The brightness sensing unit generates brightness information according to an ambient light. The second switch module has a second switch state. The processing unit is connected with the infrared light module, the brightness sensing unit and the second switch module, and controls the second switch state according to the reflected light and the brightness information.

Abstract: A PUF apparatus comprises: a PUF cell array in which a plurality of PUF cells are arranged each including a FeFET pair whose gates are commonly connected to a corresponding word line among a plurality of word lines, and whose drains and sources are connected to a corresponding bit line pair and a corresponding source line pair among a plurality of bit line pairs and a plurality of source line pairs running in a direction crossing the plurality of word lines; and a read-write-back block which is activated according to a read enable signal, and senses and amplifies a voltage difference occurring in a corresponding bit line pair among the plurality of bit line pairs according to the difference in driving strength due to a deviation in a manufacturing process of the FeFET pair in the PUF cell selected by a selected word line among the plurality of word lines.

Abstract: A nonvolatile memory device according to the embodiment includes: a first inverter; and a second inverter cross-coupled to the first inverter, wherein the second inverter includes a pull-up transistor, a pull-down transistor, and a ferroelectric field effect transistor having gate nodes connected to each other, and a restore transistor having one electrode connected to the ferroelectric field effect transistor, and the second inverter stores data in a nonvolatile manner.

Abstract: An attached floating image touch-control device is provided. The attached floating image touch-control device includes a trigger module, a floating image generation module and a sensing module. The trigger module includes a movable trigger component. The floating image generation module includes a light source, an imaging unit, and a floating imaging unit disposed on the imaging unit. The sensing module is arranged on the floating image generation module and communicatively connected to the trigger module, wherein when the sensing module senses a touch action, the sensing module outputs a driving signal, and the trigger module moves the trigger component based on the driving signal to contact and trigger the contact-type button.

Abstract: There is provided a locker with a motion sensor. The motion sensor identifies whether an object is put into or taken out from the locker by calculating coordinates of the object using a motion detection algorithm, by calculating a moving vector of the object using an image time differential algorithm or by comparing a current image frame and a background image frame, and outputs a put-in signal and a taken-out signal to a post control system.

Abstract: A method, a system, and a non-transitory computer readable record medium for expressing an emotion in a conversation message using a gesture are provided. A message expression method may include: receiving a message that is entered in a message input area of a chatroom; obtaining animation information based on an input applied to the message in the message input area; modifying the message based on the animation information; and displaying the modified message in a chat view area of the chatroom in response to receiving a message send request.

Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.

Abstract: The present invention provides a display device, which includes a frame having an accommodating cavity and a display module disposed in the accommodating cavity. The display module includes a first light source, an optical unit, an imaging unit arranged on a side of the optical unit facing away from the first light source, and a lens array arranged on a side of the imaging unit facing away from the first light source. Corresponding to a preset pattern, light emitted by the first light source passes through the optical unit, the imaging unit and the lens array to form a default floating image in a floating display area outside the accommodating cavity. In addition, the present invention also provides a non-contact key and an input device including the above display module.

Abstract: A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate. The protective layer and the photoresist layer are selectively exposed to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer. The protective layer includes a polymer without a nitrogen-containing moiety, and a basic quencher, an organic acid, a photoacid generator, or a thermal acid generator.