Abstract: Disclosed herein is an apparatus for jetting droplets using an electrostatic field, the apparatus includes a body, a chamber, an actuator, a nozzle, and a pillar-shaped member. The body is configured to contain and support a chamber, an actuator, a nozzle, and a pillar-shaped member and configured. The chamber is formed to have a predetermined volume in the body and accommodate a predetermined amount of fluid. The actuator is formed on the body, and configured to jet the fluid accommodated in the chamber using a controllable electrostatic field. The nozzle is configured to pass through the upper portion of the chamber and the central portion of the actuator, and to allow the fluid accommodated in the chamber to flow therethrough. The pillar-shaped member is located in a direction extending from the longitudinal central axis of the nozzle, and is configured to be electrically grounded and guide the fluid to smoothly flow to the inlet of the nozzle.

Abstract: A method of forming a shallow trench isolation (STI) of a semiconductor device is disclosed. The method includes the steps of (a) serially forming a pad oxide layer and a pad nitride layer on a silicon substrate, and serially etching the pad nitride layer, the pad oxide layer, and the silicon substrate to form a first trench on the silicon substrate, (b) selectively forming an epitaxial silicon layer on a silicon surface in the first trench to form a second trench, and (c) filling inner walls of the second trench with a Chemical Vapor Deposition (CVD) oxide. Herein, a size of the second trench may be smaller than a size of the first trench. Thus, a trench may have a size smaller than the size of a corresponding photoresist layer pattern, thereby facilitating formation of an STI structure having a relatively fine line width.