Patents by Inventor Han Kyu Seong
Han Kyu Seong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190088839Abstract: A light-emitting diode (LED) package includes: a reflective structure including a cavity, a bottom portion having a through hole, and a sidewall portion surrounding the cavity and the bottom portion and having an inclined inner side surface; an electrode pad inserted into the through hole; an LED on the bottom portion in the cavity, the LED including a light-emitting structure electrically connected to the electrode pad and a phosphor formed on the light-emitting structure; and a lens structure filling the cavity and formed on the reflective structure.Type: ApplicationFiled: November 16, 2018Publication date: March 21, 2019Inventors: Jin-sub LEE, Yong-il KIM, Han-kyu SEONG, Young-jin CHOI
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Publication number: 20180374738Abstract: A chip mounting method includes providing a first substrate including a light transmissive substrate having first and second surfaces, a sacrificial layer provided on the first surface, and a plurality of chips bonded to the sacrificial layer, obtaining first mapping data by testing the chips, the first mapping data defining coordinates of normal chips and defective chips among the chips, disposing a second substrate below the first surface, disposing the normal chips on the second substrate by radiating a first laser beam to positions of the sacrificial layer corresponding to the coordinates of the normal chips, based on the first mapping data, to remove portions of the sacrificial layer thereby separating the normal chips from the light transmissive substrate, and mounting the normal chips on the second substrate by radiating a second laser beam to a solder layer of the second substrate.Type: ApplicationFiled: January 12, 2018Publication date: December 27, 2018Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin Sub LEE, Han Kyu SEONG, Yong II KIM, Sung Hyun SIM, Dong gun LEE
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Patent number: 10164159Abstract: A light-emitting diode (LED) package includes: a reflective structure including a cavity, a bottom portion having a through hole, and a sidewall portion surrounding the cavity and the bottom portion and having an inclined inner side surface; an electrode pad inserted into the through hole; an LED on the bottom portion in the cavity, the LED including a light-emitting structure electrically connected to the electrode pad and a phosphor formed on the light-emitting structure; and a lens structure filling the cavity and formed on the reflective structure.Type: GrantFiled: September 13, 2017Date of Patent: December 25, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin-sub Lee, Yong-il Kim, Han-kyu Seong, Young-jin Choi
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Publication number: 20180350872Abstract: A semiconductor light emitting device includes a plurality of light emitting cells having first and second surface opposing each other, the plurality of light emitting cells including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer therebetween, an insulating layer on the second surface of the plurality of light emitting cells and having first and second openings defining a first contact region of the first conductivity-type semiconductor layer and a second contact region of the second conductivity-type semiconductor layer, respectively, a connection electrode on the insulating layer and connecting a first contact region and a second contact region of adjacent light emitting cells, a transparent support substrate on the first surface of the plurality of light emitting cells, and a transparent bonding layer between the plurality of light emitting cells and the transparent support substrate.Type: ApplicationFiled: December 21, 2017Publication date: December 6, 2018Inventors: Pun Jae CHOI, Jacob Chang-Lin TARN, Han Kyu SEONG, Jin Hyuk SONG, Yoon Joon CHOI
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Publication number: 20180286915Abstract: A semiconductor light emitting device includes a plurality of light emitting cells including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers, an insulating layer on the plurality of light emitting cells and having a first opening and a second opening defining a first contact region of the first conductivity type semiconductor layer and a second contact region of the second conductivity type semiconductor layer, respectively, in each of the plurality of light emitting cells, a connection electrode on the insulating layer and connecting the first contact region and the second contact region to electrically connect the plurality of light emitting cells to each other, a transparent support substrate on the insulating layer and the connection electrode, and a transparent bonding layer between the insulating layer and the transparent support substrate.Type: ApplicationFiled: October 20, 2017Publication date: October 4, 2018Inventors: Ji Hye YEON, Han Kyu SEONG, Wan Tae LIM, Sung Hyun SIM, Hanul YOO
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Publication number: 20180269360Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.Type: ApplicationFiled: May 21, 2018Publication date: September 20, 2018Applicant: Samsung Electronics Co., Ltd.Inventors: Ji Hye YEON, Han Kyu SEONG, Yong II KIM, Jung Sub KIM
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Patent number: 10008640Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.Type: GrantFiled: June 14, 2016Date of Patent: June 26, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ji Hye Yeon, Han Kyu Seong, Yong Il Kim, Jung Sub Kim
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Publication number: 20180175264Abstract: A light-emitting diode (LED) package includes: a reflective structure including a cavity, a bottom portion having a through hole, and a sidewall portion surrounding the cavity and the bottom portion and having an inclined inner side surface; an electrode pad inserted into the through hole; an LED on the bottom portion in the cavity, the LED including a light-emitting structure electrically connected to the electrode pad and a phosphor formed on the light-emitting structure; and a lens structure filling the cavity and formed on the reflective structure.Type: ApplicationFiled: September 13, 2017Publication date: June 21, 2018Inventors: Jin-sub LEE, Yong-il KIM, Han-kyu SEONG, Young-jin CHOI
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Patent number: 9941443Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.Type: GrantFiled: March 7, 2016Date of Patent: April 10, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin Sub Lee, Jung Sub Kim, Sam Mook Kang, Yeon Woo Seo, Han Kyu Seong, Dae Myung Chun, Young Jin Choi, Jae Hyeok Heo
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Patent number: 9842960Abstract: According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.Type: GrantFiled: September 28, 2015Date of Patent: December 12, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae Hyeok Heo, Jin Sub Lee, Young Jin Choi, Hyun Seong Kum, Ji Hye Yeon, Dae Myung Chun, Jung Sub Kim, Han Kyu Seong
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Patent number: 9780260Abstract: A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.Type: GrantFiled: August 28, 2015Date of Patent: October 3, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung Wook Hwang, Han Kyu Seong, Nam Goo Cha
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Publication number: 20170236866Abstract: A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.Type: ApplicationFiled: November 16, 2016Publication date: August 17, 2017Inventors: Jin Sub LEE, Han Kyu SEONG, Yong Il KIM, Jung Sub KIM, Seul Gee LEE
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Publication number: 20170130909Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.Type: ApplicationFiled: June 14, 2016Publication date: May 11, 2017Inventors: Ji Hye YEON, Han Kyu Seong, Yong Il Kim, Jung Sub Kim
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Publication number: 20170125631Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer, and including: a plurality of quantum barrier layers; and a plurality of quantum well layers containing indium (In), the plurality of quantum barrier layers and the plurality of quantum well layers being alternately stacked on each other, the plurality of quantum well layers comprising a first quantum well layer and a second quantum well layer; and a second conductivity-type semiconductor layer disposed on the active layer, wherein the first quantum well layer is disposed closer to the first conductivity-type semiconductor layer than the second quantum well layer, wherein the second quantum well layer is disposed closer to the second conductivity-type semiconductor layer than the first quantum well layer, wherein a thickness of the second quantum well layer is greater than a thickness of the first quantum well layer, and wherein each of theType: ApplicationFiled: August 12, 2016Publication date: May 4, 2017Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin Sub LEE, Jung Sub KIM, Han Kyu SEONG, Soon Jo KWON, Ji Hye YEON, Dong Gun LEE
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Nanostructure semiconductor light emitting device having rod and capping layers of differing heights
Patent number: 9595637Abstract: There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures.Type: GrantFiled: October 22, 2015Date of Patent: March 14, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun Seong Kum, Dae Myung Chun, Ji Hye Yeon, Han Kyu Seong, Jin Sub Lee, Young Jin Choi, Jae Hyeok Heo -
Patent number: 9553235Abstract: A method for manufacturing a semiconductor light emitting device may include steps of forming a mask layer and a mold layer having a plurality of openings exposing portions of a base layer, forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape, and forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores. The step of forming the plurality of first conductivity-type semiconductor cores may include forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion, removing the mold layer, and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape.Type: GrantFiled: February 20, 2015Date of Patent: January 24, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae Myung Chun, Ji Hye Yeon, Jae Hyeok Heo, Hyun Seong Kum, Han Kyu Seong, Young Jin Choi
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Patent number: 9525102Abstract: There is provided a method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity-type semiconductor, forming a mask including an etch stop layer on the base layer, forming a plurality of openings with regions of the base layer exposed therethrough, in the mask; forming a plurality of nanocores by growth of the first conductivity-type semiconductor on the exposed regions of the base layer to fill the plurality of openings, partially removing the mask using the etch stop layer to expose side portions of the plurality of nanocores, and sequentially growth of an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores.Type: GrantFiled: January 28, 2014Date of Patent: December 20, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Nam-Goo Cha, Geon-Wook Yoo, Han-Kyu Seong
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Patent number: 9461199Abstract: There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.Type: GrantFiled: June 26, 2015Date of Patent: October 4, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae Hyeok Heo, Jung Sub Kim, Young Jin Choi, Jin Sub Lee, Sam Mook Kang, Yeon Woo Seo, Han Kyu Seong, Dae Myung Chun
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Patent number: 9425355Abstract: A semiconductor light emitting device including a first conductive semiconductor base layer on a substrate; an insulating layer on the first conductive semiconductor base layer, the insulating layer including a plurality of openings through which the first conductive semiconductor base layer is exposed; and a plurality of nanoscale light emitting structures on the first conductive semiconductor base layer, the nanoscale light emitting structures respectively including a first conductive semiconductor core on an exposed region of the first conductive semiconductor base layer, and an active layer, and a second conductive semiconductor layer sequentially disposed on a surface of the first conductive semiconductor core, wherein a lower edge of a side portion of each nanoscale light emitting structure is on an inner side wall of the opening in the insulating layer.Type: GrantFiled: January 23, 2014Date of Patent: August 23, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung Ho Yoo, Han Kyu Seong, Nam Goo Cha, Tae Woong Kim
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Patent number: 9419176Abstract: A three-dimensional (3D) light-emitting device may include a plurality of 3D light-emitting structures formed apart from one another, each 3D light-emitting structure including: a semiconductor core vertically grown on one surface and doped in a first conductive type; an active layer formed so as to surround a surface of the semiconductor core; and a first semiconductor layer formed so as to surround a surface of the active layer and doped in a second conductive type. The 3D light-emitting device may include: a first porous insulating layer formed between lower corner portions of the 3D light-emitting structures so as to expose upper end portions of the 3D light-emitting structures; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the semiconductor core.Type: GrantFiled: December 16, 2013Date of Patent: August 16, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung-wook Hwang, Han-kyu Seong, Hun-jae Chung, Nam-goo Cha