Abstract: Various methods and systems are provided for electrokinetic dewatering of suspensions such as, e.g., phosphatic clay. In one example, among others, a system for continuous dewatering includes a cake formation zone including a first anode and a first cathode each extending across a first portion of a separation chamber; a cake dewatering zone including a second anode and a second cathode; an inlet configured to supply a dilute feed suspension comprising solids suspended in water to the cake formation zone; and a conveying belt extending between the first anode and the first cathode and between the second anode and the second cathode. A first electric field between the first anode and the first cathode forms a cake on the conveying belt by consolidating the solids, and a second electric field between the second anode and the second cathode dewaters the cake on the conveying belt.

Abstract: An apparatus for development and/or testing of a payload for a satellite, comprising: a payload interface operable to connect to the payload; and a communication link, operable to couple the apparatus with a computer; wherein the apparatus is operable to emulate one or more subsystems of the satellite, such that the behaviour of the payload when connected to the apparatus via the payload interface and communication link is the same as when in the satellite.

Abstract: Various methods and systems are provided for electrokinetic dewatering of suspensions such as, e.g., phosphatic clay. In one example, among others, a system for continuous dewatering includes a cake formation zone including a first anode and a first cathode each extending across a first portion of a separation chamber; a cake dewatering zone including a second anode and a second cathode; an inlet configured to supply a dilute feed suspension comprising solids suspended in water to the cake formation zone; and a conveying belt extending between the first anode and the first cathode and between the second anode and the second cathode. A first electric field between the first anode and the first cathode forms a cake on the conveying belt by consolidating the solids, and a second electric field between the second anode and the second cathode dewaters the cake on the conveying belt.

Abstract: A method for manufacturing an electrically programmable non-volatile memory cell comprises forming a first electrode on a substrate, forming an inter-electrode layer of material on the first electrode having a property which is characterized by progressive change in response to stress, and forming a second electrode over the inter-electrode layer of material. The inter-electrode layer comprises a dielectric layer, such as ultra-thin oxide, between the first and second electrodes. A programmable resistance, or other property, is established by stressing the dielectric layer, representing stored data. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.

Abstract: An electrically programmable non-volatile memory cell comprises a first electrode, a second electrode and an inter-electrode layer, such as ultra-thin oxide, between the first and second electrodes which is characterized by progressive change in resistance in response to program stress of relatively low voltages. A programmable resistance representing stored data is established by stressing the inter-electrode layer between the electrodes. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.

Abstract: A method for manufacturing an electrically programmable non-volatile memory cell comprises forming a first electrode on a substrate, forming an inter-electrode layer of material on the first electrode having a property which is characterized by progressive change in response to stress, and forming a second electrode over the inter-electrode layer of material. The inter-electrode layer comprises a dielectric layer, such as ultra-thin oxide, between the first and second electrodes. A programmable resistance, or other property, is established by stressing the dielectric layer, representing stored data. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.

Abstract: A method for programming a memory cell is based on applying stress to a memory cell, comprising a first electrode, a second electrode and an inter-electrode layer, to induce a progressive change in a property of the inter-electrode layer. The method includes a verify step including generating a signal, such as a cell current, indicating the value of the property in the selected memory cell. Then, the signal is compared with a reference signal to verify programming of the desired data. Because of the progressive nature of the change, many levels of programming can be achieved. The many levels of programming can be applied for programming a single cell more than once, without an erase process, to programming multiple bits in a single cell, and to a combination of multiple bit and multiple time of programming.

Abstract: An electrically programmable non-volatile memory cell comprises a first electrode, a second electrode and an inter-electrode layer, such as ultra-thin oxide, between the first and second electrodes which is characterized by progressive change in resistance in response to program stress of relatively low voltages. A programmable resistance representing stored data is established by stressing the inter-electrode layer between the electrodes. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.