Patents by Inventor Han-Lung Chang

Han-Lung Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11437161
    Abstract: An apparatus includes an extreme ultraviolet light source vessel having an intermediate focus, a scanner having a light source aperture, and a deflection module arranged between the intermediate focus and the light source aperture. The deflection module includes a first electrode plate and a second electrode plate, configured to create an electric field therebetween. Tin particles moving from the intermediate focus to the light source aperture passes through the deflection module, and are deflected by the electric field therein.
    Type: Grant
    Filed: April 28, 2021
    Date of Patent: September 6, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Lin Chang, Chieh Hsieh, Shang-Chieh Chien, Han-Lung Chang, Heng-Hsin Liu, Li-Jui Chen, Chin-Hsiang Lin
  • Patent number: 11340531
    Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.
    Type: Grant
    Filed: July 10, 2020
    Date of Patent: May 24, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ting-Ya Cheng, Han-Lung Chang, Shi-Han Shann, Li-Jui Chen, Yen-Shuo Su
  • Publication number: 20220124901
    Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. A deformable mirror is disposed in a path of the excitation laser. A controller is configured to adjust parameters of the excitation laser by controlling the deformable mirror based on a feedback parameter.
    Type: Application
    Filed: December 27, 2021
    Publication date: April 21, 2022
    Inventors: Ting-Ya CHENG, Chun-Lin CHANG, Li-Jui CHEN, Han-Lung CHANG
  • Publication number: 20220011675
    Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.
    Type: Application
    Filed: July 10, 2020
    Publication date: January 13, 2022
    Inventors: Ting-Ya CHENG, Han-Lung CHANG, Shi-Han SHANN, Li-Jui CHEN, Yen-Shuo SU
  • Patent number: 11212903
    Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. A deformable mirror is disposed in a path of the excitation laser. A controller is configured to adjust parameters of the excitation laser by controlling the deformable mirror based on a feedback parameter.
    Type: Grant
    Filed: August 26, 2019
    Date of Patent: December 28, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ting-Ya Cheng, Chun-Lin Chang, Li-Jui Chen, Han-Lung Chang
  • Patent number: 11153958
    Abstract: An extreme ultraviolet (EUV) lithography method includes causing a first metallic droplet to move along a shroud and through an aperture of the shroud at a first velocity, and adjusting an open area of the aperture of the shroud. After adjusting the open area of the aperture of the shroud, a second metallic droplet is caused to move along the shroud and through the aperture of the shroud at a second velocity, in which the second velocity is different from the first velocity.
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: October 19, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Hsun Tsai, Han-Lung Chang, Yen-Hsun Chen, Shao-Hua Wang, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 11134558
    Abstract: A droplet generator assembly includes a storage tank, a refill system, a droplet generator, and a temperature control system. The storage tank is configured to store a target material. The refill system is connected to the storage tank. The droplet generator includes a reservoir and a nozzle connected to the reservoir, in which the droplet generator is connected to the refill system, and the refill system is configured to deliver the target material to the reservoir. The temperature control system is adjacent to the refill system or the reservoir.
    Type: Grant
    Filed: July 11, 2019
    Date of Patent: September 28, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Yu Tu, Yu-Kuang Sun, Shao-Hua Wang, Han-Lung Chang, Hsiao-Lun Chang, Li-Jui Chen, Po-Chung Cheng, Cheng-Hao Lai, Hsin-Feng Chen, Wei-Shin Cheng, Ming-Hsun Tsai, Yen-Hsun Chen
  • Publication number: 20210298161
    Abstract: A method includes ejecting a metal droplet from a reservoir of a first droplet generator assembled to a vessel; emitting an excitation laser from a laser source to the metal droplet to generate extreme ultraviolet (EUV) radiation; turning off the first droplet generator; cooling down the first droplet generator to a temperature not lower than about 150° C.; dismantling the first droplet generator from the vessel at the temperature not lower than about 150° C.; and assembling a second droplet generator to the vessel.
    Type: Application
    Filed: June 3, 2021
    Publication date: September 23, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Yu TU, Han-Lung CHANG, Hsiao-Lun CHANG, Li-Jui CHEN, Po-Chung CHENG
  • Publication number: 20210294226
    Abstract: An extreme ultraviolet radiation source apparatus includes a chamber including at least a droplet generator, a nozzle of the droplet generator, and a dry ice blasting assembly. The droplet generator includes a reservoir for a molten metal, and the nozzle has a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. The dry ice blasting assembly includes a blasting nozzle, a blasting air inlet and a blaster carbon dioxide (CO2) inlet. The blasting nozzle is disposed inside the chamber. The blasting nozzle is arranged to direct a pressurized air stream and dry ice particles at the nozzle of the droplet generator.
    Type: Application
    Filed: June 7, 2021
    Publication date: September 23, 2021
    Inventors: Yen-Hsun CHEN, Ming-Hsun TSAI, Shao-Hua WANG, Han-Lung CHANG, Li-Jui CHEN, Chia-Chen CHEN
  • Publication number: 20210286273
    Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.
    Type: Application
    Filed: June 1, 2021
    Publication date: September 16, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Yu Tu, Po-Chung Cheng, Hsiao-Lun Chang, Li-Jui Chen, Han-Lung Chang
  • Publication number: 20210274627
    Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.
    Type: Application
    Filed: May 17, 2021
    Publication date: September 2, 2021
    Inventors: Wei-Chih LAI, Han-Lung CHANG, Chi YANG, Shang-Chieh CHIEN, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • Patent number: 11086225
    Abstract: A method includes providing a plurality of fuel droplets into an EUV source vessel by a fuel droplet generator, in which the fuel droplet generator has a first portion inside the EUV source vessel and a second portion outside the EUV source vessel; generating a plurality of output signals respectively from a plurality of oscillation sensors on the fuel droplet generator; determining whether the output signals are acceptable; and determining whether an unwanted oscillation originates from the first portion of the fuel droplet generator or the second portion of the fuel droplet generator when the output signals is determined as unacceptable.
    Type: Grant
    Filed: May 29, 2020
    Date of Patent: August 10, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Shin Cheng, Hsin-Feng Chen, Cheng-Hao Lai, Shao-Hua Wang, Han-Lung Chang, Li-Jui Chen, Po-Chung Cheng
  • Publication number: 20210235572
    Abstract: A system includes a laser source operable to provide a laser beam, a laser amplifier having a gain medium operable to provide energy to the laser beam when the laser beam passes through the laser amplifier, and a residual gain monitor operable to provide a probe beam and operable to derive a residual gain of the laser amplifier from the probe beam when the probe beam passes through the laser amplifier while being offset from the laser beam in time or in path.
    Type: Application
    Filed: April 12, 2021
    Publication date: July 29, 2021
    Inventors: Chun-Lin Louis Chang, Jen-Hao Yeh, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Publication number: 20210227676
    Abstract: A metal reuse system for an extreme ultra violet (EUV) radiation source apparatus includes a first metal collector for collecting metal from vanes of the EUV radiation source apparatus, a first metal storage coupled to the first metal collector via a first conduit, a metal droplet generator coupled to the first metal storage via a second conduit, and a first metal filtration device disposed on either one of the first conduit and the second conduit.
    Type: Application
    Filed: December 28, 2020
    Publication date: July 22, 2021
    Inventors: Wei-Shin CHENG, Han-Lung CHANG, Li-Jui CHEN, Po-Chung CHENG, Hsiao-Lun CHANG
  • Patent number: 11067906
    Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: July 20, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Yu Tu, Po-Chung Cheng, Hsiao-Lun Chang, Li-Jui Chen, Han-Lung Chang
  • Patent number: 11032897
    Abstract: A method includes ejecting a metal droplet from a reservoir of a droplet generator toward a zone of excitation in front of a collector, emitting an excitation laser toward the zone of excitation, such that the metal droplet is heated by the excitation laser to generate extreme ultraviolet (EUV) radiation, halting the emission of the excitation laser, depressurizing the reservoir of the droplet generator, cooling down the droplet generator to a temperature not lower than about 150° C., and refilling the reservoir of the droplet generator with a solid metal material at the temperature not lower than about 150° C.
    Type: Grant
    Filed: August 22, 2019
    Date of Patent: June 8, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Yu Tu, Han-Lung Chang, Hsiao-Lun Chang, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 11029613
    Abstract: An extreme ultraviolet radiation source apparatus includes a chamber including at least a droplet generator, a nozzle of the droplet generator, and a dry ice blasting assembly. The droplet generator includes a reservoir for a molten metal, and the nozzle has a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. The dry ice blasting assembly includes a blasting nozzle, a blasting air inlet and a blaster carbon dioxide (CO2) inlet. The blasting nozzle is disposed inside the chamber. The blasting nozzle is arranged to direct a pressurized air stream and dry ice particles at the nozzle of the droplet generator.
    Type: Grant
    Filed: July 20, 2020
    Date of Patent: June 8, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Hsun Chen, Ming-Hsun Tsai, Shao-Hua Wang, Han-Lung Chang, Li-Jui Chen, Chia-Chen Chen
  • Patent number: 11013097
    Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: May 18, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chih Lai, Han-Lung Chang, Chi Yang, Shang-Chieh Chien, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 10980100
    Abstract: A system includes a laser source operable to provide a laser beam, a laser amplifier having a gain medium operable to provide energy to the laser beam when the laser beam passes through the laser amplifier, and a residual gain monitor operable to provide a probe beam and operable to derive a residual gain of the laser amplifier from the probe beam when the probe beam passes through the laser amplifier while being offset from the laser beam in time or in path.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: April 13, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Lin Louis Chang, Jen-Hao Yeh, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Publication number: 20210059036
    Abstract: A method includes ejecting a metal droplet from a reservoir of a droplet generator toward a zone of excitation in front of a collector, emitting an excitation laser toward the zone of excitation, such that the metal droplet is heated by the excitation laser to generate extreme ultraviolet (EUV) radiation, halting the emission of the excitation laser, depressurizing the reservoir of the droplet generator, cooling down the droplet generator to a temperature not lower than about 150° C., and refilling the reservoir of the droplet generator with a solid metal material at the temperature not lower than about 150° C.
    Type: Application
    Filed: August 22, 2019
    Publication date: February 25, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Yu TU, Han-Lung CHANG, Hsiao-Lun CHANG, Li-Jui CHEN, Po-Chung CHENG