Abstract: A method for manufacturing a semiconductor device is provided.

Abstract: Sodium-based all solid-state batteries exhibit improved battery cycle life and stability with the use of a new chloride-based sodium solid electrolyte in which sodium diffusivity within the electrolyte is enhanced through substitution of atoms including one or more of Y with Zr, Ti, Hf, Ta, and Na with one or more of Ca and Sr.

Abstract: A method for manufacturing a semiconductor device is provided.

Abstract: A voice broadcast method includes: acquiring at least one piece of voice information; delivering the at least one piece of voice information to a voice broadcast device, wherein, the at least one piece of voice information includes voice identification information and a voice content; determining a first voice content to be broadcast by the voice broadcast device, wherein the first voice content is included in the at least one piece of voice information stored at the voice broadcast device; and sending, to the voice broadcast device, a first voice identification information corresponding to the first voice content, wherein the first voice identification information is used by the voice broadcast device to obtain the first voice content stored at the voice broadcast device, and to broadcast the first voice content when a preset voice broadcast condition is met.

Abstract: A computer-implemented method includes: obtaining first environmental factor data of a first time period and first historical payment data of a target Internet of Things (IoT) device in the first time period, in which the first time period is before a first time point; obtaining second environmental factor data of a second time period that is after the first time point; and obtaining a prediction, using a neural network model, operating on at least one computing device, of an estimated statistical distribution of one or more users who execute transactions using the target IoT device in the second time period, in which the first environmental factor data, the first historical payment data, and the second environment factor data are inputs to the neural network model.

Abstract: A voice broadcast method includes: acquiring at least one piece of voice information; delivering the at least one piece of voice information to a voice broadcast device, wherein, the at least one piece of voice information includes voice identification information and a voice content; determining a first voice content to be broadcast by the voice broadcast device, wherein the first voice content is included in the at least one piece of voice information stored at the voice broadcast device; and sending, to the voice broadcast device, a first voice identification information corresponding to the first voice content, wherein the first voice identification information is used by the voice broadcast device to obtain the first voice content stored at the voice broadcast device, and to broadcast the first voice content when a preset voice broadcast condition is met.

Abstract: A voice broadcast method includes: acquiring at least one piece of voice information; delivering the at least one piece of voice information to a voice broadcast device, wherein, the at least one piece of voice information includes voice identification information and a voice content; determining a first voice content to be broadcast by the voice broadcast device, wherein the first voice content is included in the at least one piece of voice information stored at the voice broadcast device; and sending, to the voice broadcast device, a first voice identification information corresponding to the first voice content, wherein the first voice identification information is used by the voice broadcast device to obtain the first voice content stored at the voice broadcast device, and to broadcast the first voice content when a preset voice broadcast condition is met.

Abstract: A computer-implemented method includes: obtaining first environmental factor data of a first time period and first historical payment data of a target Internet of Things (IoT) device in the first time period, in which the first time period is before a first time point; obtaining second environmental factor data of a second time period that is after the first time point; and obtaining a prediction, using a neural network model, operating on at least one computing device, of an estimated statistical distribution of one or more users who execute transactions using the target IoT device in the second time period, in which the first environmental factor data, the first historical payment data, and the second environment factor data are inputs to the neural network model.

Abstract: A voice broadcast method includes: acquiring at least one piece of voice information; delivering the at least one piece of voice information to a voice broadcast device, wherein, the at least one piece of voice information includes voice identification information and a voice content; determining a first voice content to be broadcast by the voice broadcast device, wherein the first voice content is included in the at least one piece of voice information stored at the voice broadcast device; and sending, to the voice broadcast device, a first voice identification information corresponding to the first voice content, wherein the first voice identification information is used by the voice broadcast device to obtain the first voice content stored at the voice broadcast device, and to broadcast the first voice content when a preset voice broadcast condition is met.

Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a first fin structure which includes first semiconductor patterns and second semiconductor patterns stacked alternately on a substrate and extends in a first direction, forming an exposed first wire pattern group which includes the second semiconductor patterns by removing the first semiconductor patterns, heat-treating the exposed first wire pattern group, and forming a first gate electrode which surrounds the first wire pattern group and extends in a second direction different from the first direction.

Abstract: A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a vertical direction with respect to a top surface of the substrate, a plurality of non-metal gate patterns surrounding the channels and being stacked on top of each other and spaced apart from each other along the vertical direction, and a plurality of metal gate patterns stacked on top of each other. The metal gate patterns are spaced apart from each other along the vertical direction. Each of the metal gate patterns surrounds a corresponding one of the non-metal gate patterns.

Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a first fin structure which includes first semiconductor patterns and second semiconductor patterns stacked alternately on a substrate and extends in a first direction, forming an exposed first wire pattern group which includes the second semiconductor patterns by removing the first semiconductor patterns, heat-treating the exposed first wire pattern group, and forming a first gate electrode which surrounds the first wire pattern group and extends in a second direction different from the first direction.

Abstract: There is provided a nanostructure semiconductor light emitting device including a base layer formed of a first conductivity-type semiconductor, a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer, a plurality of nanocores disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor, an active layer disposed on surfaces of the plurality of nanocores positioned to be higher than the first insulating layer, a second insulating layer disposed on the first insulating layer and having a plurality of second openings surrounding the plurality of nanocores and the active layer disposed on the surfaces of the plurality of nanocores, and a second conductivity-type semiconductor layer disposed on the surface of the active layer positioned to be higher than the second insulating layer.

Abstract: A nano-structure semiconductor light emitting device includes a base layer formed of a first conductivity type semiconductor, and a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer. A plurality of nanocores is disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor. An active layer is disposed on surfaces of the plurality of nanocores and positioned above the first insulating layer. A second insulating layer is disposed on the first insulating layer and has a plurality of second openings surrounding the plurality of nanocores and the active layer disposed on the surfaces of the plurality of nanocores. A second conductivity-type semiconductor layer is disposed on the surface of the active layer positioned to be above the second insulating layer.

Abstract: A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a vertical direction with respect to a top surface of the substrate, a plurality of non-metal gate patterns surrounding the channels and being stacked on top of each other and spaced apart from each other along the vertical direction, and a plurality of metal gate patterns stacked on top of each other. The metal gate patterns are spaced apart from each other along the vertical direction. Each of the metal gate patterns surrounds a corresponding one of the non-metal gate patterns.

Abstract: An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal. The at least one silicon single crystal includes a flat horizontal portion, which provides an active region of the second level semiconductor device, and a pin-shaped protruding portion protruding from the flat horizontal portion toward the first level semiconductor device.

Abstract: An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal. The at least one silicon single crystal includes a flat horizontal portion, which provides an active region of the second level semiconductor device, and a pin-shaped protruding portion protruding from the flat horizontal portion toward the first level semiconductor device.

Abstract: An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal. The at least one silicon single crystal includes a flat horizontal portion, which provides an active region of the second level semiconductor device, and a pin-shaped protruding portion protruding from the flat horizontal portion toward the first level semiconductor device.

Abstract: A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation <110> and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation <010>.

Abstract: An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal. The at least one silicon single crystal includes a flat horizontal portion, which provides an active region of the second level semiconductor device, and a pin-shaped protruding portion protruding from the flat horizontal portion toward the first level semiconductor device.