Abstract: Disclosed is a method for forming a multi-layered structure having at least two films on a semiconductor substrate. The substrate is disposed on a thermally conductible stage for supporting the substrate. After the distance between the stage and the substrate is adjusted to a first interval so that the substrate has a first temperature by heat transferred from the stage, a first thin film is formed on the substrate at the first temperature. The distance is then adjusted from the first interval to a second interval so that the substrate reaches a second temperature, and then a second thin film is formed on the first thin film at the second temperature, thereby forming the multi-layered structure on the substrate. The multi-layered structure can be employed for a gate insulation film or the dielectric film of a capacitor.

Abstract: A method of forming a dielectric film composed of metal oxide under an atmosphere of activated vapor containing oxygen. In the method of forming the dielectric film, a metal oxide film is formed on a semiconductor substrate using a metal organic precursor and O2 gas while the semiconductor substrate is exposed under activated vapor atmosphere containing oxygen, and then, the metal oxide film is annealed while the semiconductor substrate is exposed under activated vapor containing oxygen. The annealing may take place in situ with the formation of the metal oxide film, at the same or substantially the same temperature as the metal oxide forming, and/or at at least one of a different pressure, oxygen concentration, or oxygen flow rate as the metal oxide forming.

Abstract: Disclosed are a method for cleaning a deposition chamber by removing attached metal oxides, and a deposition apparatus for performing in situ cleaning. A first gas and a second gas are provided into the deposition chamber. The first gas is reacted with metal included in the metal oxide to generate reacting residues. The second gas then decomposes the reacting residues, and the decomposed residues are exhausted out of the chamber. Thus, this cleaning process can be rapidly accomplished while the deposition chamber is not opened or separated from a deposition apparatus.

Abstract: A method of fabricating an integrated circuit device having capacitors is provided. The capacitors can include a first electrode, a dielectric layer and a second electrode. An interlayer insulating layer is formed on the capacitor. The interlayer insulating layer is patterned to form a metal contact hole that exposes a region of the second electrode. The exposed region of the second electrode is reduced to remove excessive oxygen atoms that can exist in the second electrode.

Abstract: A dielectric region for a device such as a memory cell capacitor is formed by depositing a metal oxide, such as tantalum oxide, on a substrate at a first deposition rate in a first atmosphere maintained within a first temperature range and a first pressure range that produce a first tantalum oxide layer with a desirable step coverage. Metal oxide is subsequently deposited on the first metal oxide layer in a second atmosphere maintained within a second temperature range and a second pressure range that produce a second deposition rate greater than the first deposition rate to form a second tantalum oxide layer on the first tantalum oxide layer. For example, the first atmosphere may be maintained at a temperature in a range from about 350° C. to about 460° C. and a pressure in a range from about 0.01 Torr to about 2.0 Torr during formation of a first tantalum oxide layer, and the second atmosphere may be maintained at a temperature in a range from about 400° C. to about 500° C.

Abstract: A method for manufacturing a capping layer covering a capacitor of a semiconductor memory device, preferably a metal-insulator-metal (MIM) capacitor, wherein the method includes forming a capacitor having a lower electrode, a dielectric layer and an upper electrode on a semiconductor substrate, forming a capping layer on the capacitor, and crystallizing the dielectric layer. Here, forming the capping layer includes stabilizing for deposition of the capping layer without providing oxygen gas, depositing the capping layer by providing a reaction source for the capping layer; and purging an inside of a reactor for forming the capping layer.

Abstract: A method for manufacturing a capacitor of a semiconductor device is provided. The method includes the steps of: forming a first electrode on a semiconductor substrate; forming a dielectric layer on the first electrode; forming a second electrode on the dielectric layer; first annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under oxygen atmosphere; and second annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under vacuum.

Abstract: A method of forming a dielectric film composed of metal oxide under an atmosphere of activated vapor containing oxygen. In the method of forming the dielectric film, a metal oxide film is formed on a semiconductor substrate using a metal organic precursor and O2 gas while the semiconductor substrate is exposed under activated vapor atmosphere containing oxygen, and then, the metal oxide film is annealed while the semiconductor substrate is exposed under activated vapor containing oxygen. The annealing may take place in situ with the formation of the metal oxide film, at the same or substantially the same temperature as the metal oxide forming, and/or at at least one of a different pressure, oxygen concentration, or oxygen flow rate as the metal oxide forming.

Abstract: A method for manufacturing a capacitor of a semiconductor device is provided. The method includes the steps of: forming a first electrode on a semiconductor substrate; forming a dielectric layer on the first electrode; forming a second electrode on the dielectric layer; first annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under oxygen atmosphere; and second annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under vacuum.

Abstract: A dielectric region for a device such as a memory cell capacitor is formed by depositing a metal oxide, such as tantalum oxide, on a substrate at a first deposition rate in a first atmosphere maintained within a first temperature range and a first pressure range that produce a first tantalum oxide layer with a desirable step coverage. Metal oxide is subsequently deposited on the first metal oxide layer in a second atmosphere maintained within a second temperature range and a second pressure range that produce a second deposition rate greater than the first deposition rate to form a second tantalum oxide layer on the first tantalum oxide layer. For example, the first atmosphere may be maintained at a temperature in a range from about 350° C. to about 460° C. and a pressure in a range from about 0.01 Torr to about 2.0 Torr during formation of a first tantalum oxide layer, and the second atmosphere may be maintained at a temperature in a range from about 400° C. to about 500° C.