Abstract: Provided are a nozzle and a related substrate treatment apparatus. The substrate treatment apparatus includes a process chamber, a supporting member disposed in the process chamber to support substrates, and a nozzle disposed in the process chamber to supply treatment fluid. The nozzle includes an outer tube along which a plurality of spraying holes are formed and which has a first end that is closed and an inner tube inserted into the outer tube through a hole formed on a second end of the outer tube.

Abstract: The present invention relates to an apparatus for cleaning a semiconductor substrate. The apparatus has a chamber including a treating room and a drying room located on an upper portion of the treating room. A supply pipe and an exhaust pipe are provided in the drying room. The supply pipe supplies isopropyl alcohol. In the exhaust pipe, a fluid in the drying room is exhausted. The exhaust pipe is arranged at both sides of the drying room in parallel to an arrangement direction of wafers. A plurality of exhaust ports are formed in each of exhaust pipes.

Abstract: A trench isolation method is provided that prevents the formation of a dent between a trench isolation region and an active region and prevents the generation of water spots during a cleaning process. In the trench isolation method, an undercut is formed in a stress-relief oxide pad pattern formed below a nitride layer pattern that defines an active region as a mask pattern. A nitride liner, which is a stress-buffer layer, is then formed around the undercut such that is conforms to the shape of the undercut. Thus, even though the stress-buffer layer is partially etched during the removal of the nitride the hard mask pattern, the stress-buffer layer is not etched to a position below the upper surface of the substrate. Also, an anti-reflection layer, which is the main source of water spots, is simultaneously removed in the formation of the undercut.