Abstract: A method for production of red ginseng hydrolysis concentrate according to an embodiment of the present disclosure includes carrying out an enzyme reaction of red ginseng concentrate by adding an enzyme solution followed by addition of alcohol to prepare a mixture solution of red ginseng and alcohol, and centrifuging the prepared mixture solution of red ginseng and alcohol followed by concentration under reduced pressure of a supernatant separated by the centrifuge, and a red ginseng hydrolysis concentrate produced by the aforementioned process.

Abstract: A method for production of red ginseng hydrolysis concentrate according to an embodiment of the present disclosure includes carrying out an enzyme reaction of red ginseng concentrate by adding an enzyme solution followed by addition of alcohol to prepare a mixture solution of red ginseng and alcohol, and centrifuging the prepared mixture solution of red ginseng and alcohol followed by concentration under reduced pressure of a supernatant separated by the centrifuge, and a red ginseng hydrolysis concentrate produced by the aforementioned process.

Abstract: A semiconductor structure includes a semiconductor device located over a substrate, a dielectric layer stack of at least one first dielectric material layer, a silicon nitride layer, and at least one second dielectric material layer overlying the semiconductor device, and interconnect structures including metallic lines and metallic vias and embedded within the dielectric layer stack. The interconnect structures also include a metal silicide portion that directly contacts the silicon nitride layer. A combination of the silicon nitride layer and the metal silicide portion provides a continuous hydrogen barrier structure that is vertically spaced from the top surface of the semiconductor device.

Abstract: A semiconductor structure includes a semiconductor device located over a substrate, a dielectric layer stack of at least one first dielectric material layer, a silicon nitride layer, and at least one second dielectric material layer overlying the semiconductor device, and interconnect structures including metallic lines and metallic vias and embedded within the dielectric layer stack. The interconnect structures also include a metal silicide portion that directly contacts the silicon nitride layer. A combination of the silicon nitride layer and the metal silicide portion provides a continuous hydrogen barrier structure that is vertically spaced from the top surface of the semiconductor device.

Abstract: An improved mounting structure for a flangeless fuel tank forcibly maintains an air-tightness at joined parts between top and bottom halves of a tank when the fuel tank is welded, thereby reducing the space and weight of the tank. The fuel tank is increased in capacity as much as a space of a flange can be adopted. The mounting structure comprises a top half of a tank protrusively formed at a lower external lateral surface thereof with a plurality of studs, a bottom half of a tank formed with grooves corresponding to the plurality of studs and partially inserted into the lower distal end of the top half of the tank, and fastening members for being fastened to the studs of the top half of the tank so that the top and bottom halves of the tank can be air-tightly welded.

Abstract: Disclosed are a welding device of a fuel tank for vehicles, which welds flanges of upper and lower panels of the fuel tank together by pressing and melting using a laser, and a welding method thereof The welding device includes a feed unit for holding upper and lower panels of the fuel tank provided with flanges formed at edges thereof under the condition that the flanges are stacked, and for transferring the upper and lower panels in a horizontal direction; a pressure unit for pressing the flanges of the upper and lower panels, transferred by the feed unit, at front and rear portions of at front and rear portions, and for guiding the transfer of the upper and lower panels; and a laser beam generator perpendicularly separated from central portions of the flanges pressed by the pressure unit by a designated interval, for irradiating a laser beam to the upper and lower panels so that the flanges of the upper and lower panels are fusion-welded together by using heat generated from the irradiated laser beam.

Abstract: There is provided a method for fabricating a semiconductor device, by which passivation layers are formed with good step coverage to prevent crack or void from being occurred in high aspect ratio of metallization layers and the time for performing the processes can be decreased to enhance the productability and the yield of the device. The method is performed as follows. Over a substrate having completed metallization layers, an oxide layer is formed as a first passivation layer by high-density plasma chemical vapor deposition (HDP-CVD). On the HDP-CVD oxide layer, a nitride layer is formed as a second passivation layer by plasma enhanced chemical vapor deposition (PECVD) or HDP-CVD.